摘要:
A radiation source is constructed and arranged to produce extreme ultraviolet radiation. The radiation source includes a chamber, a first electrode at least partially contained in the chamber, a second electrode at least partially contained in the chamber, and a supply constructed and arranged to provide a discharge gas to the chamber. The first electrode and the second electrode are configured to create a discharge in the discharge gas to form a plasma so as to generate the extreme ultraviolet radiation. The source also includes a gas supply constructed and arranged to provide a gas at a partial pressure between about 1 Pa and about 10 Pa at a location near the discharge. The gas is selected from the group consisting of hydrogen, helium, and a mixture of hydrogen and helium.
摘要:
An imprint lithography apparatus is disclosed that includes a structure located away from a substrate holder and extending across the substrate holder, and such that an imprint template arrangement is, in use, located between the structure and the substrate holder, wherein the structure has one or more arrays of lines or one or more encoders, and the substrate or substrate holder and the imprint template have a corresponding one or more encoders that face towards one or more of the one or more arrays of lines or one or more arrays of lines that face towards one or more of the one or more encoders, and the configuration determination arrangement is configured to determine a relative configuration between the substrate or substrate holder and the structure, and/or a relative configuration between the imprint template arrangement and the structure, and/or a relative configuration between the imprint template arrangement and the substrate or substrate holder.
摘要:
An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.
摘要:
A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a fuel supply configured to supply a fuel to a plasma formation site; a laser configured to emit a beam of radiation to the plasma formation site so that a plasma that emits extreme ultraviolet radiation is generated when the beam of radiation impacts the fuel; a fuel particulate interceptor constructed and arranged to shield at least part of the radiation source from fuel particulates that are emitted by the plasma, the fuel particulate interceptor comprising a first portion and a second portion, the second portion being positioned closer to the plasma formation site than the first portion, and the first portion being rotatable; and a fuel particulate remover constructed and arranged to remove fuel particulates from a surface of the fuel particulate interceptor and to direct the fuel particulates towards a collection location.
摘要:
A lithographic apparatus is configured to project a pattern from a patterning device onto a substrate. The apparatus includes a gas purged sealing aperture extending between at least two different zones of the apparatus, and a gas supplier configured to supply the sealing aperture one or more gases selected from a group including hydrogen, deuterium, heavy hydrogen, deuterated hydrogen, and a mixture of argon and hydrogen.
摘要:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
摘要:
A lithographic apparatus includes a radiation system constructed to provide a beam of radiation from radiation emitted by a radiation source. The radiation system includes a contaminant trap configured to trap material emanating from the radiation source. The contaminant trap includes a contaminant engaging surface arranged in the path of the radiation beam that receives the material emanating from the radiation source during propagation of the radiation beam in the radiation system. The radiation system also includes a liquid tin cooling system constructed to cooling the contaminant trap with liquid tin. The apparatus includes an illumination system configured to condition the radiation beam, a support constructed to support a patterning device configured to impart the radiation beam with a pattern in its cross-section, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate.
摘要:
A lithographic apparatus includes a radiation system including a radiation source for the production of a radiation beam, and a contaminant trap arranged in a path of the radiation beam. The contaminant trap includes a plurality of foils or plates defining channels that are arranged substantially parallel to the direction of propagation of said radiation beam. The foils or plates can be oriented substantially radially with respect to an optical axis of the radiation beam. The contaminant trap can be provided with a gas injector which is configured to inject gas at least at two different positions directly into at least one of the channels of the contaminant trap.
摘要:
An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.
摘要:
A lithographic apparatus is disclosed. The apparatus includes an illumination system for providing a beam of radiation, and a support structure for supporting a patterning device. The patterning device serves to impart the projection beam with a pattern in its cross-section. The apparatus also includes a substrate table for holding a substrate, a projection system for projecting the patterned beam onto a target portion of the substrate, an infrared radiation source for providing infrared radiation into a measurement zone within the lithographic apparatus, and a detector for receiving the infrared radiation from the infrared radiation source after having passed through the measurement zone, and for outputting a signal indicative of the presence of a gas present within the measurement zone.