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    Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices
    81.
    发明申请
    Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices 有权

    公开(公告)号：US20220351775A1

    公开(公告)日：2022-11-03

    申请号：US17867359

    申请日：2022-07-18

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu

    IPC: G11C13/00

    Abstract: Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.

    Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
    82.
    发明授权
    Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices 有权

    公开(公告)号：US10790020B2

    公开(公告)日：2020-09-29

    申请号：US16384557

    申请日：2019-04-15

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu

    IPC: G11C11/00 ,  G11C13/00

    Abstract: Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.

    Phase change memory cell with constriction structure
    83.
    发明授权
    Phase change memory cell with constriction structure 有权

    公开(公告)号：US10777739B2

    公开(公告)日：2020-09-15

    申请号：US15850632

    申请日：2017-12-21

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Michael P. Violette

    IPC: H01L45/00

    Abstract: Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

    Resistive memory having confined filament formation
    86.
    发明授权
    Resistive memory having confined filament formation 有权

    公开(公告)号：US10153431B2

    公开(公告)日：2018-12-11

    申请号：US15661351

    申请日：2017-07-27

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Jun Liu

    IPC: H01L45/00

    Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

    PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
    87.
    发明申请
    PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE 审中-公开

    公开(公告)号：US20180138399A1

    公开(公告)日：2018-05-17

    申请号：US15850632

    申请日：2017-12-21

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Michael P. Violette

    IPC: H01L45/00

    Abstract: Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

    STT-MRAM cell structures
    88.
    发明授权
    STT-MRAM cell structures 有权

    公开(公告)号：US09940989B2

    公开(公告)日：2018-04-10

    申请号：US15421204

    申请日：2017-01-31

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: G11C11/00 ,  G11C11/16 ,  H01L29/66 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/66007 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

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