摘要:
According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a depletion layer, near a surface of the semiconductor substrate under the electrode, a member for sweeping, into the semiconductor substrate, charges which are generated in the semiconductor substrate by charged particles incident from the electrode and are stored in the potential well, and a member for detecting signal charges generated by the charged particles swept into the semiconductor substrate.
摘要:
A solid state image sensing device comprises an image sensor for outputting optical images as signal charges, a charge transfer section for transferring signal charges, a first reading section for non-destructively reading transferred signal charges as a plurality of first output signal components, a detecting section for detecting the difference between the first output signal components, a second reading section for adding the signal charges corresponding to the first output signal components which correspond to the difference signal and reading the added signal charges as a second output signal component, an adding section for inserting at least one signal component corresponding to the second output signal component to one or more first output signal components which are canceled due to charge-transfer for addition of signal charges and generating an output signal including a third output signal component, and a level lowering section for lowering the signal levels of the second and third output signal components according to the number of addition stages.
摘要:
A solid-state image sensor has an electrically floating carrier detecting electrode formed on a substrate, into which the signal carriers are transmitted, a sense amplifier circuit detecting the variation in a voltage of the electrode at the time of transferring the carriers, and a resetting electrode for resetting the potential of the electrode to a predetermined potential at every read-out period of the picture element section. A circuit arrangement for removing noise is provided to have two switches which switch to alternatively become conductive in response to control pulse signals. The first switch becomes conductive during a first period within one picture element period. During the first period the CCD output signal contains an effective image signal component. The second switch becomes conductive during a second period during which the CCD output signal contains a reset noise component, thereby forcibly fixing the level of the reset noise signal to a DC reference potential so that reset noise can be removed.
摘要:
A solid state image sensing system includes a CCD and a vibration table. The vibration table swing-drives the CCD in response to a drive signal generated by a drive pulse generator, in such a manner that the CCD is vibrated in a horizontal direction in one vibration cycle consisting of two succeeding frame periods each having A and B fields.
摘要:
A method of manufacturing a "two-level" solid-state image pickup device wherein a portion of a first metallic electrode electrically connected to a signal storage region is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections of the first metallic electrode. A second metallic electrode constituting a pixel electrode is connected to the first electrode at the exposed portion thereof.
摘要:
In an image sensing system, a solid-state image sensor is mounted on a vibration stand in a manner as to vibrate horizontally to an incoming light in synchronization with one frame period, thereby sensing while alternatively displacing at different sampling positions in two field periods. Field image signals from the image sensor is supplied, through a signal processor, to a signal reproduction unit which includes a carrier generator for producing first and second carrier signals having the same frequency as the horizontal readout frequency of the image sensor and a phase in reverse to one other in the field periods, and an AM modulator for amplitude-modulating the carrier signal. The amplitude modulation field signals thus obtained are sliced at a suitable level by a slicer and then synthesized each other to obtain a frame image signal.
摘要:
A solid state image-sensing device which comprises an image-sensing area formed of a plurality of matrix-arranged cells exposed to an introduced image light and an optical black connected to a readout section in parallel relationship with the image-sensing area. An image light is prevented from entering the optical black. Only noise charges (dark current charges) sent forth from the optical black are transferred to a control circuit. A gate electrode control signal for eliminating charges whose amount corresponds to that of the noise charges from the total charges collected in the storage regions of the matrix-arranged cells of the image-sensing area is produced by a control circuit. The gate electrode control signal is supplied to a gate electrode positioned between the photosensing section and vertical transfer section of the cells of the image-sensing area. A potential well lying under the gate electrode has its depth controlled by the gate electrode control signal. At first, a charge whose amount is substantially equal to that of a light-generated signal charge stored in the storage region of the image-sensing area is transferred to a vertical transfer section. After elimination of the noise charges, the remaining charges are returned at least once to the photosensing sections of the respective cells to be held in the storage regions of the photosensing sections of the cells for a prescribed length of time.