公开(公告)号：US06784764B2

公开(公告)日：2004-08-31

申请号：US10218017

申请日：2002-08-14

申请人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

发明人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

IPC分类号： H03H900

CPC分类号： H03H9/02984 ,  H03H9/02669

摘要： An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.

摘要翻译： 端面反射型表面声波滤波器能够增加通带外的衰减量，而插入损耗特性不会严重恶化。 滤波器是使用SH型表面声波的纵向耦合的谐振器型表面声波滤波器，其具有在其顶表面上形成在压电基片中的第一和第二凹槽，以便彼此基本平行并彼此间隔开 预定距离。 另外，设置在用于限定纵向耦合的谐振器型声表面波滤波器的槽之间的IDT，设置在IDT侧的第一和第二槽的侧面的反射端面以及树脂被覆层 和由SiO 2制成的保护层设置在压电基板的顶表面上。 树脂涂层被设置成至少覆盖IDT所在的区域和第一和第二槽中的至少一个以侵入其中的一个，并且保护层被布置成覆盖 IDT。

公开(公告)号：US06670739B2

公开(公告)日：2003-12-30

申请号：US10052507

申请日：2002-01-23

申请人： Hideya Horiuchi ,  Mamoru Ikeura ,  Michio Kadota

发明人： Hideya Horiuchi ,  Mamoru Ikeura ,  Michio Kadota

IPC分类号： H01L4100

CPC分类号： H03H9/02669 ,  H03H9/02921 ,  H03H9/6436 ,  H03H9/6459

摘要： A SAW apparatus includes a plurality of IDTs disposed on a piezoelectric substrate, and an edge-reflection-type SAW device in which surface acoustic waves are reflected by the edge surfaces of the piezoelectric substrate. The SAW device is housed in a package. On the top of a first main surface of the piezoelectric substrate, first and second pyroelectric charge cancellation electrodes are disposed in the vicinity of the edges defined by the main surface and the side surfaces. The first and second pyroelectric charge cancellation electrodes are electrically connected to the electrodes on the package which are electrically connected to each other within the package, respectively. Therefore, the adverse effects of pyroelectric charge which is generated due to a rapid change in temperature is minimized.

摘要翻译： SAW器件包括设置在压电基片上的多个IDT，以及表面声波被压电基片的边缘表​​面反射的边缘反射型SAW器件。 SAW器件容纳在封装中。 在压电基板的第一主表面的顶部，第一和第二热释电电极取消电极设置在由主表面和侧表面限定的边缘附近。 第一和第二热释电电极消除电极分别电连接到封装中彼此电连接的封装中的电极。 因此，由于快速温度变化而产生的热电荷的不利影响被最小化。

公开(公告)号：US06617183B2

公开(公告)日：2003-09-09

申请号：US09838031

申请日：2001-04-19

申请人： Michio Kadota ,  Yasuhiro Negoro ,  Yoshinori Miura

发明人： Michio Kadota ,  Yasuhiro Negoro ,  Yoshinori Miura

IPC分类号： H01L21265

CPC分类号： H01L21/425 ,  C30B23/02 ,  C30B29/16 ,  H01L33/0087 ,  H01L33/0095

摘要： A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgXZn1−XO (0≦X≦1) or CdXZn1−XO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.

摘要翻译： 一种形成p型半导体膜的方法包括以下步骤：在衬底上提供掺杂有p型杂质的II-VI族化合物半导体膜，其包含MgXZn1-XO（0≤x≤1） ）或CdXZn1-XO（0 <= X <= 1），并通过退火掺杂的半导体膜激活p型杂质。

公开(公告)号：US06603371B2

公开(公告)日：2003-08-05

申请号：US09950419

申请日：2001-09-12

申请人： Takeshi Nakao ,  Michio Kadota

发明人： Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H964

CPC分类号： H03H3/08 ,  H03H9/25 ,  Y10T29/42

摘要： A surface acoustic wave device includes a piezoelectric substrate, and at least one interdigital transducer disposed thereon which is made of a metal or an alloy that is heavier than Al. The acoustic velocity distribution of surface acoustic waves in the extending direction of electrode fingers of the at least one interdigital transducer is not greater than about 276 ppm, thereby effectively suppressing considerable ripples, which are noticeably found in the group delay time characteristic in particular, within the bandpass area.

摘要翻译： 表面声波装置包括压电基片和设置在其上的至少一个叉指换能器，其由比Al重的金属或合金制成。 表面声波在至少一个叉指换能器的电极指的延伸方向上的声速分布不大于约276ppm，从而有效地抑制了在组延迟时间特征中明显发现的相当大的波纹，特别是在 带通区域。

公开(公告)号：US06525345B1

公开(公告)日：2003-02-25

申请号：US09369656

申请日：1999-08-05

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L3300

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/32341

摘要： A semiconductor photonic device includes a Z-cut quartz substrate and a compound semiconductor layer presented by InxGayAlzN (where x+y+z=1, 0≦x ≦1, 0≦y≦1, and 0≦z≦1) formed on the Z-cut quartz substrate.

摘要翻译： 半导体光子器件包括Z切割石英衬底和由InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1且0≤z）呈现的化合物半导体层 <= 1）形成在Z切割石英基板上。

公开(公告)号：US06458614B1

公开(公告)日：2002-10-01

申请号：US09272703

申请日：1999-03-19

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L2100

CPC分类号： H01L31/1035 ,  H01L27/1443 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/32341

摘要： An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.

摘要翻译： 光电子集成电路包括：硅衬底; 形成在硅衬底中并处理电信号的电子电路; 形成在所述硅衬底的至少一部分上的ZnO膜; 以及电连接到电子电路的光电路。 光电路包括设置在ZnO膜上的至少一个GaN基半导体化合物层，GaN基化合物半导体层接收或发射光信号。

公开(公告)号：US06353371B1

公开(公告)日：2002-03-05

申请号：US09503542

申请日：2000-02-14

申请人： Michio Kadota ,  Harou Morii ,  Junya Ago

发明人： Michio Kadota ,  Harou Morii ,  Junya Ago

IPC分类号： H03H964

CPC分类号： H03H9/6436 ,  H03H9/02669 ,  H03H9/6463

摘要： A transversely coupled surface acoustic wave filter includes a surface acoustic wave substrate having opposing first and second end surfaces, and first and second interdigital transducers provided on the surface acoustic wave substrate. The first and second interdigital transducers define first and second surface acoustic wave resonators which use a wave including a shear horizontal wave as its main component. The first and second surface acoustic wave resonators are connected to define a transversally coupled resonator filter. The filter preferably has a relative dielectric constant E=∈s11/∈0 in the range of about 0 to about 3000 and the electromechanical coupling coefficient K is such that K2·∈s11/∈0 is in the range of about 0 to about 250. Also, the aperture length y is preferably within the range of: 0.945+5.49×exp(−E/366) ≧y≧2.46×exp(−E/219).

摘要翻译： 横向耦合表面声波滤波器包括具有相对的第一和第二端面的表面声波衬底以及设置在表面声波衬底上的第一和第二叉指换能器。 第一和第二叉指换能器限定使用包括剪切水平波作为其主要成分的波的第一和第二声表面波谐振器。 第一和第二表面声波谐振器被连接以限定横向耦合的谐振滤波器。 滤波器优选地具有在约0至约3000的范围内的相对介电常数E =∈s11 /∈0，并且机电耦合系数K使得K2.∈s11/∈0在约0至约250的范围内 另外，孔径长度y优选在0.945±5.49×exp（-E / 366）> = y> = 2.46×exp（-E / 219）的范围内。

公开(公告)号：US06346864B1

公开(公告)日：2002-02-12

申请号：US09494857

申请日：2000-02-01

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H964

CPC分类号： H03H9/6433 ,  H03H9/0038 ,  H03H9/0042 ,  H03H9/02669 ,  H03H9/6459 ,  H03H9/6463

摘要： A SAW resonator filter which generates Shear Horizontal type surface acoustic waves includes a piezoelectric substrate, and first and second resonators arranged on the piezoelectric substrate. The first and second resonators include first and second interdigital transducers having electrode fingers, respectively. The first and second interdigital transducers are acoustically coupled to form a filter, and are divided into a plurality of sub-interdigital transducer portions, respectively. By dividing the interdigital transducers to have multiple sub-IDT portions, the effective electromechanical coupling coefficient is reduced, thereby enabling the bandwidth to be made narrower. Further, the improvement in the electrode structure allows for the filter to use a piezoelectric substrate having excellent temperature characteristics, so that it is possible to achieve a SAW resonator filter having a narrow bandwidth and superior temperature characteristics. Moreover, when an edge reflection type SAW resonator filter using SH-type surface acoustic waves is made, it is possible to provide a compact bandpass filter having low insertion loss and excellent selectability.

摘要翻译： 产生剪切水平型声表面波的SAW谐振滤波器包括压电基片，以及布置在压电基片上的第一和第二谐振器。 第一和第二谐振器分别包括具有电极指的第一和第二叉指式换能器。 第一和第二叉指换能器被声学耦合以形成滤波器，并且分别被分成多个子叉指式换能器部分。 通过划分叉指式换能器以具有多个子IDT部分，有效的机电耦合系数减小，从而使带宽变窄。 此外，电极结构的改进允许滤波器使用具有优异的温度特性的压电基片，从而可以实现窄带宽和优异的温度特性的SAW谐振滤波器。 此外，当使用使用SH型表面声波的边缘反射型SAW谐振器滤波器时，可以提供具有低插入损耗和优异选择性的紧凑型带通滤波器。

公开(公告)号：US6146916A

公开(公告)日：2000-11-14

申请号：US201924

申请日：1998-12-01

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L21/203 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631

摘要： A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.

摘要翻译： 一种形成GaN基半导体层的方法包括以下步骤：在玻璃基板和硅基板之一上形成ZnO缓冲层; 并通过使用电子回旋共振分子束外延（ECR-MBE）方法在ZnO缓冲层上外延生长GaN基半导体层。

公开(公告)号：US06127769A

公开(公告)日：2000-10-03

申请号：US103322

申请日：1998-06-23

申请人： Michio Kadota ,  Hideya Horiuchi ,  Mamoru Ikeura

发明人： Michio Kadota ,  Hideya Horiuchi ,  Mamoru Ikeura

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H01L41/08

CPC分类号： H03H9/6436 ,  H03H9/02669 ,  H03H9/02716 ,  H03H9/02771 ,  H03H9/02795 ,  H03H9/6446 ,  H03H9/6469 ,  H03H9/6483

摘要： A surface acoustic wave device includes a surface acoustic wave substrate having first and second end surfaces, and a surface acoustic wave element provided on the surface acoustic wave substrate and operating using an SH-type surface acoustic wave. The surface acoustic wave element includes an interdigital transducer having a plurality of electrode fingers and a reflector having a plurality of electrode fingers. One of a pair of outermost electrode fingers is flush with one of the first and second end surfaces of the surface acoustic wave substrate, and the reflector is located at a side where the other of the pair of outermost electrode fingers is positioned, so that a SH-type surface acoustic wave excited by the IDT is confined between the reflector and the one of the first and second end surfaces.

摘要翻译： 表面声波装置包括具有第一和第二端面的表面声波基板和设置在表面声波基板上并使用SH型表面声波进行操作的表面声波元件。 表面声波元件包括具有多个电极指的交叉指型换能器和具有多个电极指的反射器。 一对最外面的电极指中的一个与声表面波基板的第一和第二端面之一齐平，并且反射器位于一对最外电极指的另一侧所在的一侧，使得 由IDT激发的SH型表面声波被限制在反射器与第一和第二端面之一之间。