Method of manufacturing display device
    81.
    发明申请
    Method of manufacturing display device 审中-公开
    显示装置的制造方法

    公开(公告)号:US20080292786A1

    公开(公告)日:2008-11-27

    申请号:US12153568

    申请日:2008-05-21

    IPC分类号: B05D5/06

    摘要: Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.

    摘要翻译: 提供一种制造显示装置的方法,该显示装置具有通过固化涂覆在玻璃基板的主表面上的树脂来形成树脂材料层的步骤; 在所述树脂材料层的主表面上形成由多层叠材料层构成的显示电路的步骤; 以及通过从设置有所述玻璃基板的所述显示电路的表面的相反侧的表面照射紫外线和所述树脂材料层,在所述树脂材料层和所述玻璃基板之间的界面处产生剥离的步骤, 将所述玻璃基板从所述玻璃基板除去,用作设置有所述显示电路的基板。

    Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device
    83.
    发明申请
    Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device 有权
    用于光致抗蚀剂,负色光致抗蚀剂组合物的材料,形成抗蚀剂图案的方法和半导体器件

    公开(公告)号:US20070128541A1

    公开(公告)日:2007-06-07

    申请号:US11607031

    申请日:2006-12-01

    IPC分类号: G03C1/00

    CPC分类号: G03F7/0382

    摘要: With the tendency of reducing the size of semiconductor circuit patterns, edge roughness on a resist pattern is increased when pattern dimensions required are close to the size of the resist molecules. The present invention provides a technique for preventing degradation of the device performance and negative effects over the system performance caused by the phenomena. A photoresist compound is used, which is a molecule having functional groups that are chemically converted due to an action of an acid with reduced solubility in alkaline developer.

    摘要翻译: 随着半导体电路图案尺寸减小的趋势,当所需的图案尺寸接近抗蚀剂分子的尺寸时,抗蚀剂图案上的边缘粗糙度增加。 本发明提供一种用于防止器件性能下降和由该现象引起的系统性能的负面影响的技术。 使用光致抗蚀剂化合物,其是具有由于在碱性显影剂中具有降低的溶解度的酸的作用而被化学转化的官能团的分子。

    Method for producing electronic device
    84.
    发明申请
    Method for producing electronic device 有权
    电子装置的制造方法

    公开(公告)号:US20060105273A1

    公开(公告)日:2006-05-18

    申请号:US10523247

    申请日:2002-07-30

    IPC分类号: G03C5/00

    摘要: There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

    摘要翻译: 存在的问题在于,当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时,由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化,从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题,使分子溶解度变化所需的反应数量保持恒定且尽可能大, 使酸发生剂成为包合物或组合的超分子,使酸催化剂浓度变大。 结果,即使相对于图案尺寸小于50nm,也可以以高生产率形成分子精度图案,从而实现高性能系统。

    Radiation-sensitive composition and method for forming patterns and fabricating semiconductor devices
    86.
    发明授权
    Radiation-sensitive composition and method for forming patterns and fabricating semiconductor devices 失效
    用于形成图案并制造半导体器件的辐射敏感组合物和方法

    公开(公告)号:US06800423B2

    公开(公告)日:2004-10-05

    申请号:US10294618

    申请日:2002-11-15

    IPC分类号: G03C500

    摘要: There is provided a negative radiation-sensitive composition, which is suitable for exposure of a far ultraviolet light comprising a wavelength 193 nm of ArF excimer-laser, freed from causes of resolution deterioration such as swelling due to permeation of a developer and residual of a resist film between lines of the pattern, and capable of forming a high resolution pattern. The radiation-sensitive composition comprises a polymer of an acrylic acid ester having a &ggr;-hydroxycarboxylic acid in its ester moiety and a photo-acid generator.

    摘要翻译: 提供了一种负辐射敏感性组合物,其适用于暴露包含波长为193nm的ArF准分子激光器的远紫外光,其不会因分解劣化的原因而引起,例如由于显影剂渗透引起的溶胀和残留的 在图案的线之间抗蚀膜,并且能够形成高分辨率图案。辐射敏感组合物包含其酯部分中具有γ-羟基羧酸的丙烯酸酯的聚合物和光酸产生剂。

    Method for manufacturing an electronic device
    87.
    发明授权
    Method for manufacturing an electronic device 失效
    电子设备的制造方法

    公开(公告)号:US06780781B2

    公开(公告)日:2004-08-24

    申请号:US10445068

    申请日:2003-05-27

    IPC分类号: H01L21302

    摘要: A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. The resist mask maintains a high dimensional accuracy. A photomask pattern is formed using as an opaque element a resist comprising a base resin and Si incorporated therein or a resist with a metal such as Si incorporated thereby by a silylation process, to improve the resistance to active oxygen. The deformation of a resist opaque pattern in a photomask is prevented. The dimensional accuracy of patterns transferred onto a Si wafer is improved in repeated use of the photomask.

    摘要翻译: 提供了一种用于制造电子设备的方法。 在该方法的一个示例中,该方法防止由曝光光的照射引起的抗蚀剂掩模的变形。 抗蚀剂掩模具有作为不透明元素的抗蚀剂,并且即使随着经受曝光处理的晶片数量的增加,也可以提供几乎没有变化的掩模图案。 抗蚀剂掩模保持高尺寸精度。 使用作为不透明元件的抗蚀剂形成光掩模图案,该抗蚀剂包含掺入其中的基础树脂和Si,或通过甲硅烷基化方法掺入其中的诸如Si的金属的抗蚀剂,以提高对活性氧的耐受性。 防止光掩模中的抗蚀剂不透明图案的变形。 转移到Si晶片上的图案的尺寸精度在光掩模的重复使用中得到改善。

    Semiconductor device manufacturing method
    88.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号:US06703328B2

    公开(公告)日:2004-03-09

    申请号:US10044987

    申请日:2002-01-15

    IPC分类号: H01L21027

    摘要: A circuit pattern, a reticle alignment mark, a bar code, and a discrimination mark which are formed on a glass plate of a photo mask is constituted of a photo sensitive and photo attenuative material containing a fine particle material and a binder. Discrimination of the photo mask is performed by irradiating predetermined discrimination light on the discrimination mark or the bar code. Alignment of the photo mask by an aligner is performed by irradiating predetermined detection light on the reticle alignment mark. In an exposure process, the pattern on the photo mask is transferred onto a semiconductor wafer by using exposure light having a wavelength different from that of the discrimination light or that of the detection light.

    摘要翻译: 在光掩模的玻璃板上形成的电路图案,标线片对准标记,条形码和鉴别标记由含有细颗粒材料和粘合剂的光敏光敏材料构成。 通过对鉴别标记或条形码照射预定的鉴别光来进行光掩模的识别。 通过在掩模版对准标记上照射预定的检测光来进行对准器的光掩模的对准。 在曝光处理中,通过使用不同于鉴别光或检测光的波长的曝光光将光掩模上的图案转印到半导体晶片上。

    Storage battery
    89.
    发明授权
    Storage battery 有权
    蓄电池

    公开(公告)号:US06593032B1

    公开(公告)日:2003-07-15

    申请号:US09179520

    申请日:1998-10-27

    IPC分类号: H01M474

    摘要: A storage battery including an electrode and an electrolyte material, in which the electrode has a grid with a mesh area of about 50 mm2 or less and an active material provided on the grid. Accordingly, it is made possible to prevent a decrease in the negative electrode's conductivity due to a contraction of the negative electrode active material that takes place extensively when a cycle of charge and discharge is repeated particularly at high temperatures with a resulting remarkable improvement in cycle life characteristics of a lead-acid storage battery.

    摘要翻译: 一种包括电极和电解质材料的蓄电池,其中电极具有网眼面积约50mm 2或更小的栅格和设置在栅格上的活性材料。 因此,可以防止由于在高温下特别重复充放电循环而引起的负极活性物质的收缩引起的负极导电性的降低,结果显着提高了循环寿命 铅酸蓄电池的特点。

    Enclosed lead storage battery
    90.
    发明授权
    Enclosed lead storage battery 失效
    封闭铅蓄电池

    公开(公告)号:US06235421B1

    公开(公告)日:2001-05-22

    申请号:US08893679

    申请日:1997-07-11

    IPC分类号: H01M1016

    摘要: An enclosed lead storage battery includes an enclosed container, a group of electrode plates including positive electrode plates and negative electrode plates, and separators, with the group of electrode plates and the separators being housed in the container. The positive electrode plates, negative electrode plates, and separators are layered side by side, with each of the positive electrode plates and negative electrode plates including a top side, a bottom side, and opposite lateral sides. At least one of the positive electrode plates and at least one of the negative electrode plates provide a grid having no frames at opposite lateral sides of the grid, such as an expanded grid. To prevent a short-circuit between the positive and negative electrode plates, the battery includes a porous mat disposed between the container and the opposite lateral sides of the grid.

    摘要翻译: 封闭式铅蓄电池包括封闭容器,一组包括正极板和负极板的电极板和隔板,其中一组电极板和隔板被容纳在容器中。 正极板,负极板和隔板是并排的,其中每个正电极板和负极板包括顶侧,底侧和相对的侧面。 正电极板和至少一个负电极板中的至少一个在栅格的相对侧面(例如扩展网格)上提供没有框架的网格。 为了防止正极板和负极板之间的短路,电池包括设置在容器和电网的相对侧面之间的多孔垫。