-
公开(公告)号：US06780781B2
公开(公告)日：2004-08-24
申请号：US10445068
申请日：2003-05-27
IPC分类号： H01L21302
CPC分类号： G03F1/32 , G03F1/56 , G03F7/405 , H01L21/76802 , Y10S438/942 , Y10S438/945 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. The resist mask maintains a high dimensional accuracy. A photomask pattern is formed using as an opaque element a resist comprising a base resin and Si incorporated therein or a resist with a metal such as Si incorporated thereby by a silylation process, to improve the resistance to active oxygen. The deformation of a resist opaque pattern in a photomask is prevented. The dimensional accuracy of patterns transferred onto a Si wafer is improved in repeated use of the photomask.
摘要翻译： 提供了一种用于制造电子设备的方法。 在该方法的一个示例中，该方法防止由曝光光的照射引起的抗蚀剂掩模的变形。 抗蚀剂掩模具有作为不透明元素的抗蚀剂，并且即使随着经受曝光处理的晶片数量的增加，也可以提供几乎没有变化的掩模图案。 抗蚀剂掩模保持高尺寸精度。 使用作为不透明元件的抗蚀剂形成光掩模图案，该抗蚀剂包含掺入其中的基础树脂和Si，或通过甲硅烷基化方法掺入其中的诸如Si的金属的抗蚀剂，以提高对活性氧的耐受性。 防止光掩模中的抗蚀剂不透明图案的变形。 转移到Si晶片上的图案的尺寸精度在光掩模的重复使用中得到改善。
-
2.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
-
公开(公告)号：US07040011B2
公开(公告)日：2006-05-09
申请号：US10045036
申请日：2002-01-15
申请人： Toshihiko Tanaka , Masaharu Kubo , Takashi Hattori
发明人： Toshihiko Tanaka , Masaharu Kubo , Takashi Hattori
IPC分类号： H05K3/30
CPC分类号： G03F1/56 , H01L21/4867 , H01L2224/16 , H01L2224/73253 , H01L2224/81193 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/10253 , H01L2924/15311 , H01L2924/16152 , H01L2924/3025 , H05K3/0002 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2924/00 , H01L2224/0401
摘要： A wiring substrate is manufactured in short TAT.Wirings of the wiring substrate are formed by an exposure treatment using a photomask which has shade patterns each containing at least nano particles and a binder.
-
4.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
IPC分类号： G03F900
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
-
公开(公告)号：US06703328B2
公开(公告)日：2004-03-09
申请号：US10044987
申请日：2002-01-15
申请人： Toshihiko Tanaka , Takashi Hattori
发明人： Toshihiko Tanaka , Takashi Hattori
IPC分类号： H01L21027
CPC分类号： G03F7/70541 , G03F1/38 , G03F1/42 , G03F7/70741
摘要： A circuit pattern, a reticle alignment mark, a bar code, and a discrimination mark which are formed on a glass plate of a photo mask is constituted of a photo sensitive and photo attenuative material containing a fine particle material and a binder. Discrimination of the photo mask is performed by irradiating predetermined discrimination light on the discrimination mark or the bar code. Alignment of the photo mask by an aligner is performed by irradiating predetermined detection light on the reticle alignment mark. In an exposure process, the pattern on the photo mask is transferred onto a semiconductor wafer by using exposure light having a wavelength different from that of the discrimination light or that of the detection light.
摘要翻译： 在光掩模的玻璃板上形成的电路图案，标线片对准标记，条形码和鉴别标记由含有细颗粒材料和粘合剂的光敏光敏材料构成。 通过对鉴别标记或条形码照射预定的鉴别光来进行光掩模的识别。 通过在掩模版对准标记上照射预定的检测光来进行对准器的光掩模的对准。 在曝光处理中，通过使用不同于鉴别光或检测光的波长的曝光光将光掩模上的图案转印到半导体晶片上。
-
公开(公告)号：US07642145B2
公开(公告)日：2010-01-05
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： H01L21/8238
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
-
公开(公告)号：US20060105273A1
公开(公告)日：2006-05-18
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
-
公开(公告)号：US09496761B2
公开(公告)日：2016-11-15
申请号：US14002592
申请日：2012-12-21
申请人： Hidehiro Haga , Masato Aono , Takashi Hattori
发明人： Hidehiro Haga , Masato Aono , Takashi Hattori
摘要： A motor may include a stationary section and a rotating section. The stationary section may include a stator core having a plurality of teeth and a coil including a conducting wire wound around each tooth. The rotating section may include a plurality of magnets arranged radially inside the coil, a rotor core, and a magnet holder holding the magnets. Each magnet may have a circumferential end face at each of both end portions in the circumferential direction. The magnet holder may include a columnar portion axially extending between adjacent magnets, and a wall surface spreading in the circumferential direction from the columnar portion. The wall surface may come into contact with a surface arranged radially outside the circumferential end face of the magnet. The circumferential end face on at least one side of the magnet may face the columnar portion with a gap interposed therebetween in the circumferential direction.
摘要翻译： 马达可以包括固定部分和旋转部分。 固定部分可以包括具有多个齿的定子芯和包括围绕每个齿缠绕的导线的线圈。 旋转部分可以包括沿线圈径向设置的多个磁体，转子芯和保持磁体的磁体保持器。 每个磁体可以在圆周方向上的两个端部的每一个处具有圆周端面。 磁体保持器可以包括在相邻的磁体之间轴向延伸的柱状部分和从柱状部分在圆周方向上扩展的壁表面。 壁面可以与设置在磁体的周向端面的径向外侧的表面接触。 磁体的至少一侧的周向端面可以在圆周方向上与其间具有间隙的方式面向柱状部。
-
公开(公告)号：US09257583B2
公开(公告)日：2016-02-09
申请号：US14119195
申请日：2011-05-25
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0236
CPC分类号： H01L31/035281 , H01L31/02366 , H01L31/03529 , Y02E10/50
摘要： A solar cell including a substrate 1, a nanopillar 11 having diameter D1 connected to the substrate 1, and a nanopillar 12 having diameter D2 connected to the substrate 1 is characterized in that D2 is greater than D1 in order to realize a solar cell having, as the surface structure, a nanopillar array structure with which it is possible to prevent reflection within the broad wavelength region of solar light. A nanopillar array structure 21 formed from two types of nanopillars having different diameters has a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 11 having diameter D1 and a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 12 having diameter D2 and therefore, is capable of preventing reflection within the broad wavelength region of solar light.
摘要翻译： 包括基板1，具有与基板1连接的直径D1的纳米柱11和具有连接到基板1的直径D2的纳米柱12的太阳能电池的特征在于，D2大于D1，以实现太阳能电池， 作为表面结构，可以防止在太阳光的宽波长范围内的反射的纳米柱阵列结构。 由具有不同直径的两种类型的纳米柱形成的纳米柱阵列结构21具有由具有直径D1的纳米柱11形成的纳米柱阵列结构的最小反射率点和由纳米柱12形成的纳米柱阵列结构的最小反射率点， 因此，能够防止太阳光的宽波长范围内的反射。
-
公开(公告)号：US09209658B2
公开(公告)日：2015-12-08
申请号：US13493237
申请日：2012-06-11
申请人： Hidehiro Haga , Kuniaki Adachi , Kensuke Shoji , Takashi Hattori , Takao Atarashi , Masato Aono
发明人： Hidehiro Haga , Kuniaki Adachi , Kensuke Shoji , Takashi Hattori , Takao Atarashi , Masato Aono
CPC分类号： H02K3/28 , H02K1/27 , H02K3/18 , H02K3/345 , H02K3/522 , H02K2203/12 , H02K2213/03
摘要： A stator unit including a coil in which a distance between an m−1-th turn and an m-th turn is wider than each distance in a first turn to the m−1-th turn. The m+1-th turn is disposed between the m−1-th turn and the m-th turn. Further, in a cross-section perpendicular to a central axis and passing a tooth, an angle between a line segment connecting respective centers of the m+1-th turn and the m−1-th turn and a line segment connecting respective centers of the m+1-th turn and the m-th turn is about 120° or more. With this structure, bulging in a circumferential direction of the coil adjacent to an inner peripheral portion of the tooth can be suppressed and a clearance can be secured between adjacent coils such that the number of turns of the coil can be increased.
摘要翻译： 一种定子单元，其包括线圈，其中第m-1圈和第m圈之间的距离比第一回合中的每个距离宽到第m-1圈。 第m + 1转位于第m-1圈和第m转之间。 此外，在垂直于中心轴线并通过齿的横截面中，连接第m + 1匝的各个中心的线段与第m-1匝之间的角度与连接各个中心的线段 第m + 1圈和第m匝约为120°以上。 通过这种结构，可以抑制与齿的内周部分相邻的线圈的圆周方向上的凸起，并且可以确保相邻线圈之间的间隙，从而可以增加线圈的匝数。
-
-
-
-
-
-
-
-
-
搜索结果
91 条记录 (耗时 0.026 秒)
