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公开(公告)号：US06780781B2
公开(公告)日：2004-08-24
申请号：US10445068
申请日：2003-05-27
IPC分类号： H01L21302
CPC分类号： G03F1/32 , G03F1/56 , G03F7/405 , H01L21/76802 , Y10S438/942 , Y10S438/945 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. The resist mask maintains a high dimensional accuracy. A photomask pattern is formed using as an opaque element a resist comprising a base resin and Si incorporated therein or a resist with a metal such as Si incorporated thereby by a silylation process, to improve the resistance to active oxygen. The deformation of a resist opaque pattern in a photomask is prevented. The dimensional accuracy of patterns transferred onto a Si wafer is improved in repeated use of the photomask.
摘要翻译： 提供了一种用于制造电子设备的方法。 在该方法的一个示例中，该方法防止由曝光光的照射引起的抗蚀剂掩模的变形。 抗蚀剂掩模具有作为不透明元素的抗蚀剂，并且即使随着经受曝光处理的晶片数量的增加，也可以提供几乎没有变化的掩模图案。 抗蚀剂掩模保持高尺寸精度。 使用作为不透明元件的抗蚀剂形成光掩模图案，该抗蚀剂包含掺入其中的基础树脂和Si，或通过甲硅烷基化方法掺入其中的诸如Si的金属的抗蚀剂，以提高对活性氧的耐受性。 防止光掩模中的抗蚀剂不透明图案的变形。 转移到Si晶片上的图案的尺寸精度在光掩模的重复使用中得到改善。
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公开(公告)号：US06703328B2
公开(公告)日：2004-03-09
申请号：US10044987
申请日：2002-01-15
申请人： Toshihiko Tanaka , Takashi Hattori
发明人： Toshihiko Tanaka , Takashi Hattori
IPC分类号： H01L21027
CPC分类号： G03F7/70541 , G03F1/38 , G03F1/42 , G03F7/70741
摘要： A circuit pattern, a reticle alignment mark, a bar code, and a discrimination mark which are formed on a glass plate of a photo mask is constituted of a photo sensitive and photo attenuative material containing a fine particle material and a binder. Discrimination of the photo mask is performed by irradiating predetermined discrimination light on the discrimination mark or the bar code. Alignment of the photo mask by an aligner is performed by irradiating predetermined detection light on the reticle alignment mark. In an exposure process, the pattern on the photo mask is transferred onto a semiconductor wafer by using exposure light having a wavelength different from that of the discrimination light or that of the detection light.
摘要翻译： 在光掩模的玻璃板上形成的电路图案，标线片对准标记，条形码和鉴别标记由含有细颗粒材料和粘合剂的光敏光敏材料构成。 通过对鉴别标记或条形码照射预定的鉴别光来进行光掩模的识别。 通过在掩模版对准标记上照射预定的检测光来进行对准器的光掩模的对准。 在曝光处理中，通过使用不同于鉴别光或检测光的波长的曝光光将光掩模上的图案转印到半导体晶片上。
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3.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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公开(公告)号：US07040011B2
公开(公告)日：2006-05-09
申请号：US10045036
申请日：2002-01-15
申请人： Toshihiko Tanaka , Masaharu Kubo , Takashi Hattori
发明人： Toshihiko Tanaka , Masaharu Kubo , Takashi Hattori
IPC分类号： H05K3/30
CPC分类号： G03F1/56 , H01L21/4867 , H01L2224/16 , H01L2224/73253 , H01L2224/81193 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/10253 , H01L2924/15311 , H01L2924/16152 , H01L2924/3025 , H05K3/0002 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2924/00 , H01L2224/0401
摘要： A wiring substrate is manufactured in short TAT.Wirings of the wiring substrate are formed by an exposure treatment using a photomask which has shade patterns each containing at least nano particles and a binder.
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5.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
IPC分类号： G03F900
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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公开(公告)号：US20050228545A1
公开(公告)日：2005-10-13
申请号：US10508545
申请日：2003-03-28
申请人： Toshihiko Tanaka , Hiroshi Fukuda , Jin Murata , Toshihiro Yamada
发明人： Toshihiko Tanaka , Hiroshi Fukuda , Jin Murata , Toshihiro Yamada
CPC分类号： G05B15/02 , Y10T307/25 , Y10T307/461 , Y10T307/747
摘要： An electric power plant general control system for controlling power generating units. A generating unit (GU2) can operate part of the auxiliaries based on an automation command outputted from a unit computer (UC2) having a sequence function portion. The generating unit operates the remaining part of the auxiliaries based on an operation command outputted from an operation board (OB2) without a sequence function portion, the operation board disposed separately from the unit computer. A general automation computer (GAC) is connected with an upper system of the unit computer, and an operator command is inputted from an interactive apparatus (I/F4). The general control system is provided with a mock-up portion (Moc) equivalent to the sequence function portion disposed on the side of the auxiliaries controlled by the automation command outputted from the unit computer. The operation signal from the general automation computer is outputted to the unit computer and the operation board.
摘要翻译： 一种用于控制发电机组的电力设备通用控制系统。 基于从具有序列功能部分的单元计算机（UC 2> 2）输出的自动化命令，生成单元（GU <2> 2）可以对辅助部件的一部分进行操作。 生成单元基于从操作板（OB＆lt; 2＆gt;）输出的没有顺序功能部分的操作命令来操作辅助设备的剩余部分，操作板与单元计算机分开设置。 通用自动化计算机（GAC）与单元计算机的上部系统连接，并且从交互式装置输入操作员命令（I / F <4>）。 通用控制系统设置有与由从单元计算机输出的自动化命令控制的辅助设备侧相对应的顺序功能部分的模拟部分（Moc）。 来自通用自动化计算机的操作信号输出到单元计算机和操作板。
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7.再颁专利
公开(公告)号：USRE36731E
公开(公告)日：2000-06-13
申请号：US190580
申请日：1994-02-02
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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公开(公告)号：US5656397A
公开(公告)日：1997-08-12
申请号：US282543
申请日：1994-07-29
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译： 将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。 这使得能够同时形成彼此宽度不同的极细线图案或空间图案。 此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。
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10.发明授权
公开(公告)号：US4869999A
公开(公告)日：1989-09-26
申请号：US83211
申请日：1987-08-10
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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