公开(公告)号：US20060066247A1

公开(公告)日：2006-03-30

申请号：US11157061

申请日：2005-06-21

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： H01J7/24

CPC分类号： H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.

摘要翻译： 等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体，以对晶片W进行等离子体蚀刻。该装置还包括用于向上电极施加直流电压的可变直流电源， 使得其表面上的自偏压的绝对值足够大以在表面上获得合适的溅射效应，并且增加上电极侧的等离子体鞘长度以产生预定的按压等离子体。

公开(公告)号：US20060037701A1

公开(公告)日：2006-02-23

申请号：US11156559

申请日：2005-06-21

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US06468347B1

公开(公告)日：2002-10-22

申请号：US09669840

申请日：2000-09-27

申请人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

发明人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L33/0075

摘要： A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and reducing dislocations in the growing GaN crystal. The facet structure reduces the EPD down to less than 106 cm−2.

摘要翻译： 通过合成GaN在气相中生长GaN单晶，在衬底上堆叠GaN晶体，在不形成平坦表面的情况下产生包括GaN晶体中的刻面的三维小面结构，保持小面结构而不掩盖小面结构， 并减少生长中的GaN晶体中的位错。 小平面结构将EPD降低到小于106厘米-2。

公开(公告)号：US6076484A

公开(公告)日：2000-06-20

申请号：US170747

申请日：1998-10-13

申请人： Naoki Matsumoto ,  Toshio Nakanishi

发明人： Naoki Matsumoto ,  Toshio Nakanishi

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： The invention provides a microwave plasma process apparatus in which an antenna having a tubular member curved in a C shape or a spiral shape and including a slit is disposed on a sealing member for sealing a chamber, so that a microwave can be emitted through the slit to the sealing member.

摘要翻译： 本发明提供了一种微波等离子体处理装置，其中具有弯曲成C形或螺旋形并且包括狭缝的管状构件的天线设置在用于密封室的密封构件上，使得可以通过狭缝发射微波 到密封构件。

公开(公告)号：US6020363A

公开(公告)日：2000-02-01

申请号：US202606

申请日：1998-12-17

申请人： Shin-ichi Hirano ,  Toshiyuki Mase ,  Naoki Agata ,  Hiroshi Iguchi ,  Naoki Matsumoto ,  Takeo Yoshioka ,  Hiroshi Tone ,  Hiroyuki Kumagai ,  Masaaki Ishizuki ,  Tomio Takeuchi

发明人： Shin-ichi Hirano ,  Toshiyuki Mase ,  Naoki Agata ,  Hiroshi Iguchi ,  Naoki Matsumoto ,  Takeo Yoshioka ,  Hiroshi Tone ,  Hiroyuki Kumagai ,  Masaaki Ishizuki ,  Tomio Takeuchi

IPC分类号： A61K31/35 ,  A61K31/352 ,  A61K31/366 ,  A61P1/04 ,  A61P9/00 ,  A61P17/06 ,  A61P19/02 ,  A61P29/00 ,  A61P37/00 ,  A61P37/02 ,  A61P37/06 ,  C07D311/76

CPC分类号： C07D311/76

摘要： Compounds of the formula (I) ##STR1## wherein R is a hydrogen atom or a C.sub.1-6 alkyl group and n is an integer of 0 or 1, and pharmaceutical preparations thereof are provided. These pharmaceutical preparations are useful for the prevention or treatment of diseases associated with an abnormality in immunological regulatory function or vascularization.

摘要翻译： PCT No.PCT / JP96 / 01657 Sec。 371日期1998年12月17日第 102（e）1998年12月17日PCT PCT 1996年6月17日PCT公布。 出版物WO97 / 48693 日期1997年12月24日其中R为氢原子或C1-6烷基且n为0或1的整数的式（I）化合物及其药物制剂。 这些药物制剂可用于预防或治疗与免疫调节功能或血管形成异常有关的疾病。

公开(公告)号：US5311471A

公开(公告)日：1994-05-10

申请号：US987543

申请日：1992-12-07

申请人： Naoki Matsumoto ,  Yuji Wtanabe ,  Shigeo Ohshima

发明人： Naoki Matsumoto ,  Yuji Wtanabe ,  Shigeo Ohshima

IPC分类号： G11C7/10 ,  G11C7/12 ,  G11C11/419 ,  G11C7/00

CPC分类号： G11C11/419 ,  G11C7/1048 ,  G11C7/12

摘要： A semiconductor memory device including:a data storage device having a plurality of memory cells each capable of storing a data and being selected by an address, first complementary data corresponding to the data in a selected memory cell being outputted to first complementary data lines;a first equalizer for short-circuiting and equalizing the first complementary data lines;an amplifier for receiving the first complementary data from the first complementary data lines, making large the difference between levels of the first complementary data, and outputting as second complementary data the levels to second complementary data lines;a second equalizer for short-circuiting and equalizing the second complementary data lines;a data latch circuit having latch units and switching means, the latch unit receiving and latching the second complementary data from the second complementary data lines and outputting as third complementary data the second complementary data to third complementary data lines, the switching unit connecting/disconnecting the second complementary data lines, and the switching unit being serially connected to the second complementary data lines between the second equalizer and the latch units; andan output unit for receiving the third complementary data from the third complementary data lines and outputting an output signal corresponding to the third complementary data.

摘要翻译： 一种半导体存储装置，包括：数据存储装置，具有多个存储单元，每个存储单元能够存储数据并由地址选择，对应于所选存储单元中的数据的第一互补数据被输出到第一互补数据线; 用于短路和均衡第一互补数据线的第一均衡器; 放大器，用于从第一互补数据线接收第一互补数据，使得第一互补数据的电平之差变大，并将电平作为第二互补数据输出到第二互补数据线; 第二均衡器，用于短路和均衡第二互补数据线; 具有锁存单元和开关装置的数据锁存电路，所述锁存单元从所述第二互补数据线接收并锁存所述第二互补数据，并将所述第二补充数据作为第三补充数据输出到第三互补数据线，所述切换单元连接/断开 第二互补数据线，并且开关单元串联连接到第二均衡器和锁存单元之间的第二互补数据线; 以及输出单元，用于从第三互补数据线接收第三互补数据，并输出对应于第三互补数据的输出信号。

公开(公告)号：US5251430A

公开(公告)日：1993-10-12

申请号：US565795

申请日：1990-08-10

申请人： Naoki Matsumoto ,  Naoki Kinoshita

发明人： Naoki Matsumoto ,  Naoki Kinoshita

IPC分类号： A01D34/685 ,  A01D34/66

CPC分类号： A01D34/66 ,  A01D34/71 ,  A01D2101/00 ,  Y10S56/20

摘要： A cutter and housing assembly for a lawn mower has a cutter having a plurality of blades disposed dispersely as viewed in plan, and a cutter housing accommodating the cutter therein and having at least an upper panel and a side grass clipping discharge outlet. The upper panel has an elevated panel portion which defines a grass clipping discharge passage. The elevated panel portion is spaced from lower ends of the blades by a distance ranging from 120 mm to 140 mm, and is higher than the upper panel by a distance ranging from 0 mm to 20 mm.

摘要翻译： 用于割草机的切割器和壳体组件具有切割器，其具有如平面图所示分散地设置的多个叶片，以及容纳切割器的切割器壳体，并且至少具有上部面板和侧部草屑排出口。 上面板具有限定草屑排出通道的升高的面板部分。 升高的面板部分与叶片的下端间隔开120mm至140mm的距离，并且比上面板高出0mm至20mm的距离。

公开(公告)号：US09035509B2

公开(公告)日：2015-05-19

申请号：US13533354

申请日：2012-06-26

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： H02K5/22 ,  H02K11/02

CPC分类号： H02K11/026 ,  H02K5/225

摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.

摘要翻译： 电动机的轭具有底部和开口端，并且容纳电枢。 端部支架基本上封闭轭的开口端。 在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。 一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。 端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。 每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。 进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US08506753B2

公开(公告)日：2013-08-13

申请号：US13177195

申请日：2011-07-06

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

摘要翻译： 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。