Abstract:
Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Abstract:
A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops.
Abstract:
Techniques to dynamically manage wireless connections using a coverage database are described. For example, a mobile computing device may comprise a connection management module operative to dynamically select a wireless connection technology based on a location of the mobile computing device and information from a coverage database, and to initiate a wireless connection using the selected wireless connection technology. Other embodiments are described and claimed.
Abstract:
Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.
Abstract:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
Abstract:
A no load detection and shutdown circuit in an isolated driver is provided. A no load condition is detected by primary side evaluation of a reflected voltage. If a determination is made that a no load condition is present, the no load detection circuit signals a half bridge driver of the driver to cease oscillations, shutting down the driver.
Abstract:
An inverter for a lighting device including one or more solid state light sources is used to power a secondary load, such as a cooling device, sensor, or control with an auxiliary power circuit that provides a selectable auxiliary voltage to the secondary load. The auxiliary power circuit includes a voltage regulation circuit and a voltage selection circuit. The voltage selection circuit provides a feedback voltage to the voltage regulation circuit which his indicative of auxiliary output voltage. The voltage regulation circuit operates based on the feedback voltage and a reference voltage to adjust the auxiliary voltage to a level that differs from the input voltage from the inverter.
Abstract:
A mobile computing device comprises a wireless transceiver and a processing circuit. The processing circuit is configured to identify a location, to identify a wireless access point within a predetermined distance of the location, to detect a wireless access point identifier using the wireless transceiver, to compare the detected wireless access point identifier to the identified wireless access point, and to initiate location determination based on the comparison.