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    Methods For Improving Selectivity of Electroless Deposition Processes
    5.
    发明申请
    Methods For Improving Selectivity of Electroless Deposition Processes 有权
    提高无电沉积工艺选择性的方法

    公开(公告)号：US20090291275A1

    公开(公告)日：2009-11-26

    申请号：US12471310

    申请日：2009-05-22

    申请人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    发明人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    IPC分类号： B32B3/00 ,  B05D5/12 ,  B05D3/04

    CPC分类号： H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

    摘要： Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

    摘要翻译： 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

    Methods for improving selectivity of electroless deposition processes
    6.
    发明授权
    Methods for improving selectivity of electroless deposition processes 有权
    提高无电沉积工艺选择性的方法

    公开(公告)号：US08551560B2

    公开(公告)日：2013-10-08

    申请号：US12471310

    申请日：2009-05-22

    申请人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    发明人： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    IPC分类号： C23C18/18 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50

    CPC分类号： H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

    摘要： Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

    摘要翻译： 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

    Stamp usage to enhance surface layer functionalization and selectivity
    7.
    发明授权
    Stamp usage to enhance surface layer functionalization and selectivity 有权
    印章使用，以增强表面层的功能化和选择性

    公开(公告)号：US08580344B2

    公开(公告)日：2013-11-12

    申请号：US12405218

    申请日：2009-03-16

    申请人： Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

    发明人： Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

    IPC分类号： G01N31/00 ,  G01N31/20 ,  G01N31/22 ,  B01L3/00

    CPC分类号： C40B60/08 ,  B01J19/0046 ,  B01J2219/00317 ,  B01J2219/00364 ,  B01J2219/00376 ,  B01J2219/00382 ,  B01J2219/00427 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00659 ,  B01J2219/00702 ,  C40B50/18

    摘要： This disclosure provides methods, devices and systems for using a stamp to enhance selectivity between surface layers of a substrate, and to facilitate functionalizing selected layers. An array of flat stamps may be used to concurrently stamp multiple regions of a substrate to transfer one or more substances to the topmost layer or layers of the substrate. If desired, the affected regions of the substrate may be isolated from each other through the use of a reactor plate that, when clamped to the substrate's surface, forms reaction wells in the area of stamping. The stamp area can, if desired, be configured for stamping the substrate after the reactor plate has been fitted, with the individual stamps sized and arranged in a manner that permits stamping within each reaction well. If applied in a combinatorial process, a robotic process may be used to transfer multiple combinations of contact substances and processing chemicals to each reaction well to perform many concurrent processes upon a single substrate (e.g., a single coupon). The methods, devices and systems provided facilitate semiconductor design, optimization and qualification, and may be adapted to production manufacturing.

    摘要翻译： 本公开提供了使用印模来增强基底的表面层之间的选择性并促进官能化所选择的层的方法，装置和系统。 可以使用平面阵列阵列来同时印刷衬底的多个区域以将一种或多种物质转移到衬底的最上层或多层。 如果需要，可以通过使用反应器板将基材的受影响区域彼此隔离，当将其夹在基材表面上时，在冲压区域中形成反应孔。 如果需要，邮票区域可以被配置用于在安装反应器板之后冲压衬底，各个邮票的大小和布置方式允许在每个反应井内冲压。 如果应用于组合过程中，机器人过程可用于将接触物质和加工化学品的多种组合转移到每个反应井，以在单个底物（例如，单一试样）上进行许多并行处理。 提供的方法，设备和系统有助于半导体设计，优化和鉴定，并可适用于生产制造。

    Method of forming a layer to enhance ALD nucleation on a substrate
    10.
    发明授权
    Method of forming a layer to enhance ALD nucleation on a substrate 有权
    形成层以增强基底上的ALD成核的方法

    公开(公告)号：US07902064B1

    公开(公告)日：2011-03-08

    申请号：US12121661

    申请日：2008-05-15

    申请人： Tony Chiang ,  Chi-I Lang ,  Zachary Fresco

    发明人： Tony Chiang ,  Chi-I Lang ,  Zachary Fresco

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28562 ,  C23C16/0272 ,  C23C16/45525 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876

    摘要： A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.

    摘要翻译： 描述了一种用于增强基底的成核的层，包括形成该层的方法，该方法包括获得包括具有电介质区域和导电区域的图案化特征的基底，在该基底上选择性地形成自对准单层（SAM） 电介质区域以增强第一前体的成核过程，以及将第一前体沉积在基底上，所述前体吸附在SAM上。