公开(公告)号：US20100315854A1

公开(公告)日：2010-12-16

申请号：US12863740

申请日：2008-12-10

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Norikazu Ohshima ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Norikazu Ohshima ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata

IPC分类号： G11C19/08

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.

摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有：连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。 在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1（通过该区域壁被捕获）。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3，畴壁被捕获。

公开(公告)号：US20100309713A1

公开(公告)日：2010-12-09

申请号：US12865197

申请日：2009-01-09

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/933 ,  Y10S977/935

摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.

摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层 层夹在第二磁化固定层和第二磁化自由层之间。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。 第三磁化固定层和第三磁化自由层具有面内磁各向异性。

公开(公告)号：US20100309712A1

公开(公告)日：2010-12-09

申请号：US12865194

申请日：2009-01-09

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222

摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has perpendicular magnetic anisotropy, and the first magnetization fixed layer and the second magnetization free layer has in-plane magnetic anisotropy. The first magnetization free layer has: first and second magnetization fixed regions whose magnetization directions are fixed; and a magnetization free region whose magnetization direction is reversible and connected to the first and second magnetization fixed regions. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced in a first direction from center of the magnetization free region. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. The second magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.

摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。 第一磁化自由层具有垂直的磁各向异性，第一磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层具有：其磁化方向固定的第一和第二磁化固定区; 和磁化方向可逆地连接到第一和第二磁化固定区域的无磁化区域。 磁化自由区​​和第二磁化自由层彼此磁耦合。 在平行于每个层的平面中，第二磁化自由层的中心在从无磁化区域的中心向第一方向位移。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。 第二磁化固定层和第三磁化自由层具有面内磁各向异性。

公开(公告)号：US20100188890A1

公开(公告)日：2010-07-29

申请号：US12665773

申请日：2008-06-16

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228

摘要： A magnetoresistance effect element includes: a magnetization free layer; a spacer layer provided adjacent to the magnetization free layer; a first magnetization fixed layer provided adjacent to the spacer layer on a side opposite to the magnetization free layer; and at least two second magnetization fixed layers provided adjacent to the magnetization free layer. The magnetization free layer, the first magnetization fixed layer, and the second magnetization free layers respectively have magnetization components in a direction substantially perpendicular to film surfaces thereof. The magnetization free layer includes: two magnetization fixed portions; and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetizations of the two magnetization fixed portions constituting the magnetization free layer are fixed substantially antiparallel to each other in directions substantially perpendicular to the film surface. The domain wall motion portion is provided with magnetic anisotropy in a direction perpendicular to the film surface.

摘要翻译： 磁阻效应元件包括：无磁化层; 邻近无磁化层设置的间隔层; 在与所述磁化自由层相反的一侧与所述间隔层相邻设置的第一磁化固定层; 以及与无磁化层相邻设置的至少两个第二磁化固定层。 磁化自由层，第一磁化固定层和第二磁化自由层分别在基本垂直于其膜表面的方向上具有磁化分量。 无磁化层包括：两个磁化固定部分; 以及布置在两个磁化固定部分之间的畴壁运动部分。 构成无磁化层的两个磁化固定部分的磁化在基本上垂直于膜表面的方向上彼此基本上反平行地固定。 畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

公开(公告)号：US20100149862A1

公开(公告)日：2010-06-17

申请号：US12297153

申请日：2007-04-09

申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.

摘要翻译： 磁性随机存取存储器包括配备有具有可逆磁化的磁化反转区域并通过其使写入电流在面内方向上流动的磁记录层，具有固定磁化强度的磁化固定层，提供非磁性层 在磁化反转区域和磁化固定层之间，以及与磁记录层相对设置并具有接收在磁记录层中产生的热量和散热的功能的吸热结构。 这种磁性随机存取存储器可以通过使用吸热结构辐射在磁记录层中产生的热量，并且防止由写入电流在面内方向上流动引起的温度上升。

公开(公告)号：US07372673B2

公开(公告)日：2008-05-13

申请号：US11139680

申请日：2005-05-31

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967

摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

摘要翻译： 在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加 偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

公开(公告)号：US07239482B2

公开(公告)日：2007-07-03

申请号：US11333897

申请日：2006-01-18

申请人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

发明人： Shinsaku Saitho ,  Haruo Urai ,  Nobuyuki Ishiwata ,  Kiyotaka Shimabayashi ,  Yoshihiro Nonaka ,  Tamaki Toba

IPC分类号： G11B5/147

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313

摘要： A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

摘要翻译： 薄膜磁头通过在绝缘基板上依次形成下屏蔽层，保持MR磁敏元件，公共极层和写间隙层的读取间隙层，形成第一平坦化层，线圈 图案层和除了ABS平面附近的写间隙层上依次层叠的第二平坦化层，在ABS平面附近的写间隙层和第二平坦化层上形成上极层。 在与ABS平面分离的位置上的公共极层上形成有凹部，凹部填充有非磁性体，并且上极层和公共极层之间的间隙深度由凹部决定。

公开(公告)号：US20060232894A1

公开(公告)日：2006-10-19

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06950290B2

公开(公告)日：2005-09-27

申请号：US10241520

申请日：2002-09-12

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967

摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

摘要翻译： 在包括插入层和自由层之间的钉扎层，钉扎层，自由层和非磁性层的磁阻效应传感器中，纵向偏置层直接连接到自由层的一部分以施加 偏置磁场到自由层，从而偏置自由层的磁化方向，使得自由层的磁化方向与纵向偏置层的磁化方向一致。

公开(公告)号：US20050185339A1

公开(公告)日：2005-08-25

申请号：US10911578

申请日：2004-08-05

申请人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

发明人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3109 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3163

摘要： A recording head is a magnetic head in which ends on one side of opposed first and second magnetic cores form a recording gap, said other ends form a magnetic joint, coils insulated by an insulating material are provided between said first and second magnetic cores, magnetic fluxes of said first and second magnetic cores excited by said coils leak from said recording gap so that recording onto a recording medium is carried out. In said recording head, a distance from said end of said recording gap close to said magnetic medium to a contact point of said magnetic joint (hereinafter, yoke length) is not more than 20 μm. A magnetic recording/reproduction apparatus has this head.

摘要翻译： 记录头是磁头，其中在相对的第一和第二磁芯的一侧上的端部形成记录间隙，所述另一端形成磁性接头，在所述第一和第二磁芯之间设置由绝缘材料绝缘的线圈，磁性 由所述线圈激励的所述第一和第二磁芯的磁通从所述记录间隙泄漏，从而进行到记录介质上的记录。 在所述记录头中，从所述记录间隙的接近所述磁介质的端部到所述磁性接头的接触点（以下称为磁轭长度）的距离不大于20微米。 磁记录/再现装置具有该磁头。