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公开(公告)号：US20130248937A1
公开(公告)日：2013-09-26
申请号：US13897189
申请日：2013-05-17
Applicant: OmniVision Technologies, Inc.
Inventor： Hidetoshi Nozaki , Tiejun Dai
IPC: H01L27/148
CPC classification number: H01L27/148 , H01L27/14601 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L29/1079 , H01L29/1083 , H01L29/66537 , H01L2924/12043
Abstract: An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.
Abstract translation: 图像传感器像素包括半导体层，用于积累光电荷的光敏区域，浮动节点，沟槽和根深蒂的传输门。 感光区域和沟槽设置在半导体层内。 沟槽延伸到光敏区域和浮动节点之间的半导体层中，并且固定的传输栅极设置在沟槽内，以控制光生电荷从感光区域到浮动节点的转移。
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公开(公告)号：US20250159375A1
公开(公告)日：2025-05-15
申请号：US18937933
申请日：2024-11-05
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Tiejun Dai , Bo Mu , Menghan Guo , Wenlei Yang , Qinyi Wang , Andreas Suess
IPC: H04N25/707 , H04N23/45 , H04N25/47 , H04N25/531 , H04N25/62 , H04N25/76
Abstract: Hybrid image sensors with adjustable contrast thresholds (and associated systems, devices, and methods) are disclosed herein. In one embodiment, an imaging system comprises one or more event vision sensor (EVS) pixels, and a plurality of CMOS image sensor (CIS) pixels. Each EVS pixel can be configured to, based on a contrast threshold, capture event data corresponding to contrast information of light incident on the EVS pixel. Each CIS pixel can be configured to capture CIS data corresponding to intensity of light incident on the CIS pixel. The imaging system can further comprise (i) a contrast threshold calibration circuit configured to adjust a value of the contrast threshold over time, and (ii) a deblur circuit configured to generate deblurred image data by deblurring the CIS data captured by the plurality of CIS pixels using at least a portion of the event data captured by the one or more EVS pixels.
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公开(公告)号：US20250159367A1
公开(公告)日：2025-05-15
申请号：US18938125
申请日：2024-11-05
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Tiejun Dai , Bo Mu , Menghan Guo , Wenlei Yang , Qinyi Wang , Andreas Suess
IPC: H04N25/42 , H04N25/46 , H04N25/47 , H04N25/707 , H04N25/78
Abstract: Methods for operating hybrid image sensors having different CIS-to-EVS resolutions (and associated systems, devices, and methods) are disclosed herein. In one embodiment, an imaging system includes a hybrid image sensor including (a) an event driven sensing array including one or more event vision sensor (EVS) pixels arranged in one or more EVS pixel rows and configured to capture EVS data having an EVS resolution, and (b) a pixel array including a plurality of CMOS image sensor (CIS) pixels arranged in one or more CIS pixel rows and configured to capture CIS data having a CIS resolution. The imaging system can further include control circuitry configured to adjust the CIS resolution of the CIS data and/or the EVS resolution of the EVS data such that a mismatch between the CIS resolution and the EVS resolution is reduced.
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公开(公告)号：US20240015414A1
公开(公告)日：2024-01-11
申请号：US17810966
申请日：2022-07-06
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Keiji Mabuchi , Tiejun Dai
CPC classification number: H04N5/3559 , H04N5/3591 , H04N5/378 , H04N5/347 , H04N5/379
Abstract: A pixel circuit includes a first photodiode and a second photodiode. The first and second photodiodes photogenerate charge in response to incident light. A first transfer transistor is coupled to the first photodiode. A first floating diffusion is coupled to the first transfer transistor. A second transfer transistor is coupled to the second photodiode. A second floating diffusion is coupled to the second transfer transistor. A dual floating diffusion transistor is coupled between the first and second floating diffusions. An overflow transistor is coupled to the second photodiode. A capacitor is coupled between a voltage source and the overflow transistor. A capacitor readout transistor is coupled between the capacitor and the second floating diffusion. An anti-blooming transistor coupled between the first photodiode and a power line.
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公开(公告)号：US20230421922A1
公开(公告)日：2023-12-28
申请号：US17849403
申请日：2022-06-24
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Zhe Gao , Chengcheng Xu , Dennis Tunglin Lee , Tiejun Dai
IPC: H04N5/378 , H04N5/355 , H01L27/146
CPC classification number: H04N5/378 , H04N5/3559 , H01L27/14643 , H01L27/14612
Abstract: Pixel designs with reduced LOFIC reset and settling times are disclosed herein. In one embodiment, a pixel cell includes a photosensor configured to photogenerate image charge in response to incident light, a floating diffusion to receive the image charge from the photosensor, a transfer transistor coupled between the floating diffusion and the photosensor to transfer the image charge to the floating diffusion, and a first reset transistor coupled between the floating diffusion and the voltage supply. The pixel cell further includes a capacitor having two ends, and a second reset transistor. A first end of the capacitor is coupled to the floating diffusion. The second reset transistor is coupled between a second end of the capacitor and the voltage supply.
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Patent Agency Ranking
公开(公告)号：US11729529B1
公开(公告)日：2023-08-15
申请号：US17825797
申请日：2022-05-26
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Zhe Gao , Hiroaki Ebihara , Ling Fu , Tiejun Dai
IPC: H04N25/75 , H04N25/53 , H04N25/62 , H04N25/65 , H04N25/771 , H04N25/532
CPC classification number: H04N25/75 , H04N25/53 , H04N25/62 , H04N25/65 , H04N25/771
Abstract: A global shutter readout circuit includes a reset transistor coupled between a reset voltage and a bitline. A pixel enable transistor is coupled between the reset transistor and a source follower transistor. First and second terminals of the pixel enable transistor are coupled together in response to a pixel enable signal coupled to a third terminal of the pixel enable transistor. A first storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A first storage capacitor is coupled to the first storage transistor. A second storage transistor coupled to the second terminal of the pixel enable transistor and the gate of the source follower transistor. A second storage capacitor is coupled to the second storage transistor. A row select transistor is coupled to the source follower transistor to generate an output signal from the global shutter readout circuit.
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公开(公告)号：US20220239858A1
公开(公告)日：2022-07-28
申请号：US17156290
申请日：2021-01-22
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Tiejun Dai , Shoushun Chen , Zhe Gao
IPC: H04N5/3745 , H04N5/378 , H04N5/355 , H01L27/146
Abstract: An event driven pixel includes a photodiode configured to photogenerate charge in response to incident light received from an external scene. A photocurrent to voltage converter is coupled to the photodiode to convert photocurrent generated by the photodiode to a voltage. A filter amplifier is coupled to the photocurrent to voltage converter to generate a filtered and amplified signal in response to the voltage received from the photocurrent to voltage converter. A threshold comparison stage is coupled to the filter amplifier to compare the filtered and amplified signal received from the filter amplifier with thresholds to asynchronously detect events in the external scene in response to the incident light. A digital time stamp generator is coupled to asynchronously generate a digital time stamp in response to the events asynchronously detected in the external scene by the threshold comparison stage.
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公开(公告)号：US20220199671A1
公开(公告)日：2022-06-23
申请号：US17125619
申请日：2020-12-17
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Zhe Gao , Ling Fu , Qing Qin , Tiejun Dai
IPC: H01L27/146 , H04N5/351 , H04N5/3745
Abstract: An event driven sensor includes an arrangement of photodiodes including an inner portion laterally surrounded by an outer portion. An outer pixel cell circuit is coupled to generate an outer pixel value in response to photocurrent generated by the outer portion. The outer pixel value is a binned signal representative of an average value of brightness of incident light on the arrangement of photodiodes. An inner pixel cell circuit is coupled to the inner portion to generate an inner pixel value in response to photocurrent generated by from the inner portion. An event driven circuit is coupled to the outer pixel cell circuit and the inner pixel cell circuit. The event driven circuit is coupled to generate an output signal responsive to an inner brightness indicated by the inner pixel value relative to an outer brightness indicated by the outer pixel value.
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公开(公告)号：US20210360175A1
公开(公告)日：2021-11-18
申请号：US17066200
申请日：2020-10-08
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Tiejun Dai , Hiroaki Ebihara , Sang Joo Lee , Rui Wang , Hiroki Ui
Abstract: A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.
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公开(公告)号：US20210344867A1
公开(公告)日：2021-11-04
申请号：US16862337
申请日：2020-04-29
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Zhe Gao , Tiejun Dai
IPC: H04N5/3745 , H04N5/378
Abstract: An image sensor includes a source follower coupled to a photodiode to generate an image signal responsive to photogenerated charge. The image signal is received by image readout circuitry through a row select transistor. A reset transistor resets the photogenerated charge. A first node of mode select circuit is coupled to the reset transistor, a second node is coupled to a pixel supply voltage, and a third node is coupled to an event driven circuit. The mode select circuit couples the first node to the second node during an imaging mode to supply the pixel supply voltage to the reset transistor. The mode select circuit is further configured to couple the first node to the third node during an event driven mode to couple a photocurrent of the photodiode to drive the event driven circuit through the reset transistor to detect changes in the photocurrent.
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