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81.发明申请公开(公告)号：US20110188172A1
公开(公告)日：2011-08-04
申请号：US12699411
申请日：2010-02-03
IPC分类号： H01G9/00
摘要： A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
摘要翻译： 电容器包括形成在电介质材料中的多个纳米通道。 在纳米通道的内表面上形成导电膜，并且在导电膜上形成电荷势垒。 在纳米通道中设置电解液。 电极与纳米通道中的电解液结合形成电容器。
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公开(公告)号：US07960808B2
公开(公告)日：2011-06-14
申请号：US11844109
申请日：2007-08-23
申请人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
发明人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/5252 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.
摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。
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公开(公告)号：US20100264396A1
公开(公告)日：2010-10-21
申请号：US12426809
申请日：2009-04-20
IPC分类号： H01L47/00 , H01L21/283
CPC分类号： H01L45/142 , G11C13/0004 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as n-doped silicon, and having a ring-shaped top surface. A disc-shaped insulating member is formed on the top of the pipe-shaped member by oxidizing the conductive fill. A layer of programmable resistance material, such as a phase change material, is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistance material.
摘要翻译： 电极结构和集成电路电极的制造方法包括形成包含管状部件的底部电极，该管状部件填充有诸如n掺杂硅的导电材料，并具有环形顶表面。 通过氧化导电填料，在管状构件的顶部上形成圆盘形的绝缘构件。 将一层可编程电阻材料（例如相变材料）沉积成与管状构件的顶表面接触。 与可编程电阻材料层接触的顶部电极。
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公开(公告)号：US20080217700A1
公开(公告)日：2008-09-11
申请号：US11684619
申请日：2007-03-11
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823842 , H01L29/4958 , H01L29/7845
摘要： NFET and PFET devices with separately stressed channel regions, and methods of their fabrication is disclosed. A FET is disclosed which includes a gate, which gate includes a metal in a first state of stress. The FET also includes a channel region hosted in a single crystal Si based material, which channel region is overlaid by the gate and is in a second state of stress. The second state of stress of the channel region is of an opposite sign than the first state of stress of the metal included in the gate. The NFET channel is usually in a tensile state of stress, while the PFET channel is usually in a compressive state of stress. The methods of fabrication include the deposition of metal layers by physical vapor deposition (PVD), in such manner that the layers are in stressed states.
摘要翻译： 具有单独应力通道区域的NFET和PFET器件及其制造方法。 公开了一种FET，其包括栅极，该栅极包括处于第一应力状态的金属。 FET还包括托管在单晶Si基材料中的沟道区域，该沟道区域被栅极覆盖并处于第二应力状态。 沟道区域的第二应力状态与包括在栅极中的金属的第一应力状态相反。 NFET通道通常处于应力的拉伸状态，而PFET通道通常处于应力的压缩状态。 制造方法包括通过物理气相沉积（PVD）沉积金属层，使得层处于应力状态。
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公开(公告)号：US07211507B2
公开(公告)日：2007-05-01
申请号：US10709865
申请日：2004-06-02
IPC分类号： H01L21/285
CPC分类号： H01L21/76846 , H01L21/28562 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.
摘要翻译： 在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。 所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强原子层沉积（PE-ALD）在低k材料衬底上形成保护层。 保护层的氮含量大于其钽含量。 然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。 本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域。 在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。 本发明在低k材料和衬垫材料之间产生尖锐的界面。
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公开(公告)号：US07186446B2
公开(公告)日：2007-03-06
申请号：US10699226
申请日：2003-10-31
IPC分类号： H05H1/24
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76843
摘要： A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
摘要翻译： 一种用各种氮含量的等离子体增强层沉积TaN的方法。 使用氢和氮等离子体的混合物，膜中的氮含量可以从0到N / Ta = 1.7。 通过在TaN沉积期间关闭氮气流，容易生长TaN / Ta双层，其具有优于单个Ta层或单个TaN层的铜扩散阻挡性能。
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87.发明授权Method for forming a perovskite thin film using a sputtering method with a fully oxidized perovskite target 失效使用具有完全氧化的钙钛矿靶的溅射法形成钙钛矿薄膜的方法公开(公告)号：US06210545B1
公开(公告)日：2001-04-03
申请号：US09447626
申请日：1999-11-23
IPC分类号： C23C1434
CPC分类号： C23C14/3414 , C04B35/462 , C04B35/49 , C04B35/645 , C23C14/088
摘要： An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.
摘要翻译： 用于形成薄膜的本发明的方法包括以下步骤：制备完全氧化并结晶成钙钛矿结构的材料的溅射靶，在惰性气体气氛中用靶溅射沉积样品顶部的薄膜 ，并在非氧环境中退火薄膜。 通过使用这样的靶，可以减少在溅射沉积期间的负离子效应，并且消除退火过程中氧的存在。
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公开(公告)号：US4633129A
公开(公告)日：1986-12-30
申请号：US729028
申请日：1985-04-30
IPC分类号： H01J37/077 , H01J1/02 , H01J43/08
CPC分类号： H01J1/025
摘要： A long life high current density hollow cathode electron beam source for use in various E-beam apparatus which uses an ionizable gas within the hollow cathode. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages.
摘要翻译： 一种长寿命的高电流密度中空阴极电子束源，用于各种电子束装置，其使用空心阴极内的可电离气体。 通过能量气体离子轰击空心阴极内的电子发射表面，可以通过二次发射而不是热离子发射效应来发射电子。 一旦通过外部电离电压初始化，器件基本上是自我维持的，并且在室温附近操作，而不是在热离子发射温度下并且具有降低的电压。
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