公开(公告)号：US20060028862A1

公开(公告)日：2006-02-09

申请号：US10910725

申请日：2004-08-03

申请人： Tai Min ,  Yimin Guo ,  Pokang Wang

发明人： Tai Min ,  Yimin Guo ,  Pokang Wang

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

公开(公告)号：US06979586B2

公开(公告)日：2005-12-27

申请号：US10872915

申请日：2004-06-21

申请人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

发明人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

IPC分类号： A61K31/404 ,  C07D209/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L21/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

摘要翻译： 在正交字和位线之间形成MTJ元素。 位线是在高导电率层下包括高导电性层和软磁性层的复合线。 在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。 该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

公开(公告)号：US20050180201A1

公开(公告)日：2005-08-18

申请号：US10860902

申请日：2004-06-03

申请人： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

发明人： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

摘要翻译： 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20050059170A1

公开(公告)日：2005-03-17

申请号：US10661039

申请日：2003-09-12

申请人： Tai Min ,  Po Wang

发明人： Tai Min ,  Po Wang

IPC分类号： G11C11/15 ,  H01F10/16 ,  H01F10/32 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L27/22 ,  H01L29/78 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： G11C11/15 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic tunneling junction (MTJ) memory cell and an MRAM array of such cells, is shielded by magnetic shields of ferromagnetic material or by ferromagnetic shields that are stabilized by patterned layers of antiferromagnetic material or permanent magnetic material. The ferromagnetic portions of the shields surround the MTJ cells substantially conformally and thereby can compensate the poles of the free layers of MTJ cells of various geometric cross-sectional shapes and also protect the cells from the adverse effects of extraneous fields. The additional antiferromagnetic and permanent magnetic materials stabilize the shields by exchange or direct coupling.

公开(公告)号：US06606782B2

公开(公告)日：2003-08-19

申请号：US10104778

申请日：2002-03-22

申请人： Tai Min ,  Po-Kang Wang ,  Moris Musa Dovek

发明人： Tai Min ,  Po-Kang Wang ,  Moris Musa Dovek

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.

摘要翻译： 为了形成自旋阀装置，通过形成间隙层开始。 在缓冲层上形成具有耐火材料层的缓冲层。 包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层包括堆叠有铁磁层的下反铁磁层或者与永久磁性层堆叠的Cr层。 通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。 覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。 无形，固定，间隔和反铁磁层。 在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

公开(公告)号：US08525280B2

公开(公告)日：2013-09-03

申请号：US13136194

申请日：2011-07-26

申请人： Tai Min ,  Cheng Horng ,  Po Kang Wang

发明人： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC分类号： H01L29/82 ,  G11C11/15

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.

摘要翻译： 提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层 每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。 如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

公开(公告)号：US08446689B2

公开(公告)日：2013-05-21

申请号：US13136182

申请日：2011-07-26

申请人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

发明人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

IPC分类号： G11B5/127

CPC分类号： C25D5/022 ,  G11B5/3116 ,  G11B5/3163

摘要： A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.

摘要翻译： 公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。 这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼，而另一个子结构被优化用于高饱和磁化强度。

公开(公告)号：US20120257305A1

公开(公告)日：2012-10-11

申请号：US13066178

申请日：2011-04-08

申请人： Yuhui Tang ,  Lijie Guan ,  Tai Min ,  Suping Song

发明人： Yuhui Tang ,  Lijie Guan ,  Tai Min ,  Suping Song

IPC分类号： G11B5/31 ,  G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49032

摘要： A PMR writer is disclosed wherein a magnetic assist layer (MAL) made of an anisotropic (−Ku) or (+Ku) magnetic material is formed along a main pole trailing side to optimize the vertical magnetic field and field gradient at the air bearing surface. A Ru seed layer is formed between the main pole and (−Ku) MAL to induce a hard axis direction toward the main pole. A (−Ku) MAL is preferably comprised of hcp-CoIr while CoPt and FePt are examples of a (+Ku) MAL. The MAL has a down-track thickness from 5 to 20 nm, a width equal to the track width in a cross-track direction, and extends 100 to 500 nm in a direction toward a back end of the main pole. As a result, flux leakage from the main pole to trailing shield is reduced and aerial density is increased. A method for fabricating the PMR writer is provided.

摘要翻译： 公开了一种PMR写入器，其中沿着主极后方形成由各向异性（-Ku）或（+ Ku）磁性材料制成的磁辅助层（MAL），以优化空气轴承表面处的垂直磁场和场梯度 。 在主极和（-Ku）MAL之间形成Ru种子层，以引导朝向主极的硬轴方向。 A（-Ku）MAL优选由hcp-CoIr组成，而CoPt和FePt是（+ Ku）MAL的实例。 MAL具有5至20nm的下轨道厚度，其宽度等于轨道宽度，并且在朝向主极后端的方向上延伸100至500nm。 结果，从主极到后挡板的磁通泄漏减少，空中密度增加。 提供了一种制造PMR写入器的方法。

公开(公告)号：US20120063214A1

公开(公告)日：2012-03-15

申请号：US12807611

申请日：2010-09-09

申请人： Tai Min ,  Qiang Chen ,  Po Kang Wang

发明人： Tai Min ,  Qiang Chen ,  Po Kang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.

摘要翻译： MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。 因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。 在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

公开(公告)号：US08018690B2

公开(公告)日：2011-09-13

申请号：US12079470

申请日：2008-03-27

申请人： Tai Min ,  Pokang Wang ,  Min Li ,  Otto Vogeli

发明人： Tai Min ,  Pokang Wang ,  Min Li ,  Otto Vogeli

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/16 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/49053

摘要： A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.

摘要翻译： 提供了CPP MTJ或GMR读取传感器，其中自由层通过周向涡流构型中的磁化而自稳定。 这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。 缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。 涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。