公开(公告)号：US20130070576A1

公开(公告)日：2013-03-21

申请号：US13678017

申请日：2012-11-15

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

IPC: G11B13/04

CPC classification number: G11B13/08 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/6088 ,  G11B13/04 ,  G11B2005/0021 ,  Y10T428/11

Abstract: An apparatus includes a near field transducer positioned adjacent to an air bearing surface, a first magnetic pole, a heat sink positioned between the first magnetic pole and the near field transducer, and a diffusion barrier positioned between the near field transducer and the first magnetic pole. The diffusion barrier can be positioned adjacent to the magnetic pole or the near field transducer.

公开(公告)号：US12249357B2

公开(公告)日：2025-03-11

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US11935567B2

公开(公告)日：2024-03-19

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US11107499B2

公开(公告)日：2021-08-31

申请号：US16688656

申请日：2019-11-19

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B5/00 ,  G11B13/08 ,  G11B5/31 ,  G11B7/1387 ,  G11B7/24059 ,  G11B5/60 ,  C23C14/58 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  G11B5/48 ,  C01F7/00 ,  C01G5/00 ,  B32B15/01 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

公开(公告)号：US11107496B2

公开(公告)日：2021-08-31

申请号：US16731526

申请日：2019-12-31

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Martin Blaber ,  Li Wan

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/48 ,  C22C5/04 ,  G11B5/00

Abstract: Heat assisted magnetic recording (HAMR) devices that includes a near field transducer, the near field transducer including alloys of a first element selected from: platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os); and a second element selected from; hafnium (Hf), niobium (Nb), tantalum (Ta), titanium (Ti), vanadium (V), and zirconium (Zr).

公开(公告)号：US10964347B2

公开(公告)日：2021-03-30

申请号：US15357333

申请日：2016-11-21

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Justin Glen Brons ,  Steve C. Riemer ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B11/00 ,  G11B5/40 ,  G11B13/08 ,  C01F7/00 ,  C01G5/00 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  C23C14/58 ,  G11B5/31 ,  G11B5/48 ,  G11B5/60 ,  G11B7/1387 ,  G11B7/24059 ,  B32B15/01 ,  G11B5/00 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02

Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

公开(公告)号：US10580439B2

公开(公告)日：2020-03-03

申请号：US16160661

申请日：2018-10-15

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

IPC: G11B5/31 ,  G11B5/00

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

公开(公告)号：US10482914B2

公开(公告)日：2019-11-19

申请号：US15952506

申请日：2018-04-13

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B5/00 ,  G11B13/08 ,  G11B5/31 ,  G11B7/1387 ,  G11B7/24059 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  G11B5/48 ,  C01F7/00 ,  C01G5/00 ,  G11B5/60 ,  C23C14/58 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02 ,  B32B15/01

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

公开(公告)号：US10229704B2

公开(公告)日：2019-03-12

申请号：US15613393

申请日：2017-06-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Martin Blaber ,  Tong Zhao ,  Justin Brons ,  Michael Kautzky

IPC: G11B5/02 ,  G11B11/00 ,  G11B5/31 ,  G11B5/60 ,  G11B5/00

Abstract: Devices having air bearing surfaces (ABS), the devices including a near field transducer (NFT) that includes a disc configured to convert photons incident thereon into plasmons; and a peg configured to couple plasmons coupled from the disc into an adjacent magnetic storage medium, wherein at least one of a portion of the peg, a portion of the disc, or a portion of both the peg and the disc include a multilayer structure including at least two layers including at least one layer of a first material and at least one layer of a second material, wherein the first material and the second material are not the same and wherein the first and the second materials independently include aluminum (Al), antimony (Sb), bismuth (Bi), boron (B), barium (Ba), calcium (Ca), cerium (Ce), chromium (Cr), cobalt (Co), copper (Cu), erbium (Er), gadolinium (Gd), gallium (Ga), germanium (Ge), gold (Au), hafnium (Hf), indium (In), iridium (Ir), iron (Fe), lanthanum (La), magnesium (Mg), manganese (Mn), molybdenum (Mo), nickel (Ni), niobium (Nb), osmium (Os), palladium (Pd), platinum (Pt), rhenium (Re), rhodium (Rh), ruthenium (Ru), scandium (Sc), silicon (Si), silver (Ag), strontium (Sr), tantalum (Ta), thorium (Th), tin (Sn), titanium (Ti), vanadium (V), tungsten (W), ytterbium (Yb), yttrium (Y), zirconium (Zr), or combinations thereof.