公开(公告)号：US08841662B2

公开(公告)日：2014-09-23

申请号：US12917548

申请日：2010-11-02

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极电极层具有两层或多层的层叠结构，其中使用功函数低于氧化物半导体层的功函数或合金的金属形成与氧化物半导体层接触的层 含有这样的金属。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。

公开(公告)号：US08747558B2

公开(公告)日：2014-06-10

申请号：US11723574

申请日：2007-03-21

申请人： Junichiro Sakata ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Shunpei Yamazaki

IPC分类号： C23C16/00

CPC分类号： H01L51/56 ,  C23C14/12 ,  C23C14/246 ,  C23C14/56

摘要： The purpose of the invention is increasing the efficiency of utilizing an EL material and providing a deposition method and a vapor deposition apparatus which is one of the film formation systems which are excellent in throughput and uniformity in film thickness in forming an EL layer. According to the invention, evaporation is performed by moving or reciprocating an evaporation source holder in which a plurality of containers (crucible) each encapsulating an evaporation material are set only in an X direction while moving a substrate at regular intervals. Further, in the plurality of evaporation source holders, film thickness meters of adjacent evaporation sources are disposed alternately so as to sandwich the movement pathway of the substrate.

摘要翻译： 本发明的目的是提高使用EL材料的效率，并提供一种沉积方法和一种蒸镀装置，它是成膜系统中成膜系统之一，并且在形成EL层时膜厚度均匀性优异。 根据本发明，通过移动或往复运动蒸发源夹持器来进行蒸发，其中，每个包封蒸发材料的多个容器（坩埚）仅在X方向上设置，同时以一定间隔移动基板。 此外，在多个蒸发源保持器中，交替地设置相邻蒸发源的膜厚计，以夹持基板的移动路径。

公开(公告)号：US08654272B2

公开(公告)日：2014-02-18

申请号：US12848404

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US08643018B2

公开(公告)日：2014-02-04

申请号：US13616019

申请日：2012-09-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/14 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/45

摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。 用于驱动电路的薄膜晶体管的源极和漏极由金属形成。 使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。 显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。 用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。 使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

公开(公告)号：US08586197B2

公开(公告)日：2013-11-19

申请号：US11884548

申请日：2006-02-21

申请人： Shunpei Yamazaki ,  Hisao Ikeda ,  Satoshi Seo ,  Junichiro Sakata ,  Yuji Iwaki

发明人： Shunpei Yamazaki ,  Hisao Ikeda ,  Satoshi Seo ,  Junichiro Sakata ,  Yuji Iwaki

IPC分类号： H01L51/54 ,  C09K11/06

CPC分类号： H01L51/5278 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1014 ,  C09K2211/186 ,  H01L51/0059 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5048 ,  H01L2251/305 ,  H01L2251/308 ,  H01L2251/5315 ,  H01L2251/5323 ,  H05B33/14

摘要： A composite material includes an organic compound represented by the following general formula (1) and an inorganic compound, where, in the general formula (1), R1 to R24 is identical to or different from one another, and represent any of hydrogen, an alkyl group, an alkoxy group, an aryl group, and an arylalkyl group. A light emitting element includes the composite material and a light emitting device and an electronic appliance includes the light emitting element. The composite material has an excellent carrier transporting property and an excellent carrier injecting property with respect to the organic compound along with high visible light transmittance. By utilizing the composite material, a current excitation type light emitting element requiring low driving voltage and having excellent light emitting efficiency is obtained. By using the light emitting element, a light emitting device consuming low power and an electronic appliance including the light emitting device is provided.

摘要翻译： 复合材料包括由以下通式（1）表示的有机化合物和无机化合物，其中在通式（1）中，R 1至R 24彼此相同或不同，并且表示氢， 烷基，烷氧基，芳基和芳基烷基。 发光元件包括复合材料，发光器件和电子器件包括发光元件。 该复合材料具有优异的载流子传输性能和相对于有机化合物的优异载流子注入性以及高可见光透射率。 通过利用复合材料，可以获得需要低驱动电压且发光效率优异的电流激励型发光元件。 通过使用发光元件，提供消耗低功率的发光器件和包括发光器件的电子器件。

公开(公告)号：US08470650B2

公开(公告)日：2013-06-25

申请号：US12906553

申请日：2010-10-18

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

公开(公告)号：US08450144B2

公开(公告)日：2013-05-28

申请号：US12722795

申请日：2010-03-12

申请人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0297 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78618

摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。

公开(公告)号：US08420441B2

公开(公告)日：2013-04-16

申请号：US12846585

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

IPC分类号： H01L21/00

CPC分类号： H01L27/3262 ,  G06F1/163 ,  H01L21/02614 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H04B1/16

摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

摘要翻译： 一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。 在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层 与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。

公开(公告)号：US08330156B2

公开(公告)日：2012-12-11

申请号：US12644286

申请日：2009-12-22

申请人： Shunpei Yamazaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Junichiro Sakata

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78696

摘要： In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.

摘要翻译： 在包括氧化物半导体的薄膜晶体管中，在氧化物半导体层和栅极绝缘层之间形成具有比氧化物半导体层更高导电性的氧化物簇，由此可以增加薄膜晶体管的场效应迁移率并增加 关闭电流可以抑制。

公开(公告)号：US08294147B2

公开(公告)日：2012-10-23

申请号：US12832333

申请日：2010-07-08

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

摘要翻译： 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。