公开(公告)号：US09514960B2

公开(公告)日：2016-12-06

申请号：US14779477

申请日：2014-03-03

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: H01L21/322 ,  H01L21/762 ,  H01L21/324

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

Abstract: This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

Abstract translation: 本公开涉及一种将二氧化硅层溶解在结构中的方法，包括从其后表面到其前表面的支撑衬底，二氧化硅层和半导体层，该溶解方法在炉中实施 其中结构支撑在载体上，溶解方法导致二氧化硅层中包含的氧原子扩散通过半导体层并产生挥发性产物，并且该炉包括适于与挥发性产物反应的阱，以便 降低与至少一个结构的前表面平行的挥发性产物的浓度梯度。

公开(公告)号：US09437473B2

公开(公告)日：2016-09-06

申请号：US14424311

申请日：2013-09-04

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/20 ,  H01L21/67 ,  H01L21/683

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.

Abstract translation: 沿着所述接口之一分离包括至少两个分离界面的至少两个基板的方法包括在将所述基板之间插入刀片之前损坏所选择的一个界面的外围区域的至少一部分，然后将所述刀片 并且部分地分离基底，并且在叶片保持插入其间的同时在分离的基底之间的空间中施加流体，并且通过涉及破坏界面处的硅氧烷键的应力腐蚀来降低所选界面的断裂能。

公开(公告)号：US09136113B2

公开(公告)日：2015-09-15

申请号：US14044846

申请日：2013-10-02

Applicant: SOITEC

Inventor： Didier Landru ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Christelle Veytizou

IPC: H01L21/461 ,  H01L21/02 ,  H01L21/316 ,  H01L21/324 ,  H01L21/762

CPC classification number: H01L21/3247 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/31662 ,  H01L21/7624

Abstract: A process for avoiding formation of an Si—SiO2—H2 environment during a dissolution treatment of a semiconductor-on-insulator structure that includes a carrier substrate, an oxide layer, a thin layer of a semiconductor material and a peripheral ring in which the oxide layer is exposed. This process includes encapsulating at least the exposed oxide layer of the peripheral ring with semiconductor material by performing a creep thermal treatment; and performing an oxide dissolution treatment to reduce part of the thickness of the oxide layer. In this process, the semiconductor material that encapsulates the oxide layer has a thickness before the oxide dissolution that is at least twice that of the oxide that is to be dissolved, thus avoiding formation of an Si—SiO2—H2 environment on the peripheral ring where the oxide layer would otherwise be exposed.

Abstract translation: 在绝缘体上半导体结构的溶解处理中避免形成Si-SiO 2 -H 2环境的方法，其包括载体衬底，氧化物层，半导体材料的薄层和外围环，其中氧化物 层暴露。 该方法包括通过进行蠕变热处理将至少外围环的暴露的氧化物层与半导体材料封装起来; 并进行氧化物溶解处理以减少氧化物层的厚度的一部分。 在该方法中，封装氧化物层的半导体材料的氧化物溶解前的厚度为要溶解的氧化物的至少两倍，因此避免在外围环上形成Si-SiO 2 -H 2环境， 否则会暴露氧化层。

公开(公告)号：US20150221544A1

公开(公告)日：2015-08-06

申请号：US14424311

申请日：2013-09-04

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: H01L21/762

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.

Abstract translation: 沿着所述接口之一分离包括至少两个分离界面的至少两个基板的方法包括在将所述基板之间插入刀片之前损坏所选择的一个界面的外围区域的至少一部分，然后将所述刀片 并且部分地分离基底，并且在叶片保持插入其间的同时在分离的基底之间的空间中施加流体，并且通过涉及破坏界面处的硅氧烷键的应力腐蚀来降低所选界面的断裂能。

公开(公告)号：US20140015023A1

公开(公告)日：2014-01-16

申请号：US14027528

申请日：2013-09-16

Applicant: Soitec

Inventor： Frederic Allibert ,  Gweltaz Gaudin ,  Fabrice Lallement ,  Didier Landru ,  Karine Landry ,  Carlos Mazure ,  Mohamad A. Shaheen

IPC: H01L31/0248

CPC classification number: H01L29/78603 ,  H01L29/32 ,  H01L29/7841 ,  H01L31/0248

Abstract: Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.

Abstract translation: 本发明的实施例涉及包括基底晶片，绝缘层和顶部半导体层的基板，其中绝缘层至少包括电荷密度高于1010电荷/ cm 2的绝对值的区域。 本发明还涉及制造这种基材的方法。