公开(公告)号：US07735602B2

公开(公告)日：2010-06-15

申请号：US11802868

申请日：2007-05-25

申请人： Kazuhiro Yasuda ,  Tadashi Oshima ,  Koichi Tanaka ,  Kazuo Yamamoto

发明人： Kazuhiro Yasuda ,  Tadashi Oshima ,  Koichi Tanaka ,  Kazuo Yamamoto

IPC分类号： F01N13/08

CPC分类号： F01N13/185 ,  F01N1/00 ,  F01N13/1805 ,  F01N2450/20 ,  F01N2470/10 ,  F01N2470/24

摘要： A muffler structure capable of suppressing generation of abnormal noise in the muffler even when the outer and the inner tubes expand thermally. Provided is a double-pipe muffler structure including an inner tube and an outer tube. In the muffler structure, an annular front step portion and an annular rear step portion are formed in the inner tube, while the step portions is brought into contact, from inside, with the outer tube and thus are supported by the outer tube. The outer tube supports the front and the rear step portions by being brought into close contact with the step portions partially and elastically.

摘要翻译： 即使外管和内管热膨胀，也能够抑制消音器产生异常噪音的消音器结构。 提供一种包括内管和外管的双管消声器结构。 在消声器结构中，在内管中形成环状的前台阶部和环状的后台阶部，同时台阶部从内侧与外管接触，由外管支承。 外管通过部分地弹性地与台阶部紧密接触来支撑前台阶部和后台阶部。

公开(公告)号：US07708660B2

公开(公告)日：2010-05-04

申请号：US11131257

申请日：2005-05-18

申请人： Shinya Kuwabara ,  Koichi Tanaka

发明人： Shinya Kuwabara ,  Koichi Tanaka

IPC分类号： F16H59/00 ,  F16H61/00

CPC分类号： F16H55/56

摘要： A belt type continuously variable transmission includes an adjustable sheave which is provided with a fixed rotor fixed to a revolving shaft and with a movable rotor attached to the revolving shaft by spline fit in a manner inhibiting their relative rotation and allowing axial displacement so that a groove width is adjustable between the movable rotor and the fixed rotor, wherein the revolving shaft is provided with a load supporting portion on which tip surfaces of spline teeth of the movable rotor are in slide contact, whereby a radial load from the movable rotor is supported by the load supporting portion.

摘要翻译： 带式无级变速器包括可调节滑轮，其具有固定在旋转轴上的固定转子，并且具有通过花键配合而附接到旋转轴的可动转子，该方式抑制其相对旋转并允许轴向位移，使得槽 所述可动转子与所述固定转子之间的宽度是可调节的，其中，所述回转轴设置有负载支承部，所述可动转子的花键齿的顶端表面滑动接触，由此来自所述可动转子的径向载荷由 负载支承部。

公开(公告)号：US07696771B2

公开(公告)日：2010-04-13

申请号：US12042343

申请日：2008-03-05

申请人： Koichi Tanaka ,  Masakatsu Suda

发明人： Koichi Tanaka ,  Masakatsu Suda

IPC分类号： G01R31/26

CPC分类号： G01R31/31901 ,  G01R31/31721

摘要： Provided is a test apparatus that tests fluctuation of a power supply voltage supplied to a device under test, including an oscillator that outputs a clock signal having a frequency that corresponds to the power supply voltage supplied to the power supply input terminal of the device under test, and a measuring section that measures the frequency of the clock signal. For example, the oscillator outputs as the clock signal an output signal of any one negative logic element from among an odd number of negative logic elements connected in a loop, and at least one of the negative logic elements operates using, as a voltage source, a voltage corresponding to the power supply voltage supplied to the power supply input terminal of the device under test.

摘要翻译： 提供一种测试装置，其测试提供给被测设备的电源电压的波动，该测试装置包括输出具有与提供给被测设备的电源输入端的电源电压相对应的频率的时钟信号的振荡器 以及测量时钟信号频率的测量部分。 例如，振荡器作为时钟信号输出来自连接在一个回路中的奇数个负逻辑单元中的任何一个负逻辑单元的输出信号，并且至少一个负逻辑单元使用作为电压源的操作， 对应于提供给被测设备的电源输入端的电源电压的电压。

公开(公告)号：US07678660B2

公开(公告)日：2010-03-16

申请号：US11252597

申请日：2005-10-19

申请人： Koichi Tanaka

发明人： Koichi Tanaka

IPC分类号： H01L21/20

CPC分类号： H05K1/162 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L28/40 ,  H01L2924/0002 ,  H05K3/0023 ,  H05K3/005 ,  H05K3/107 ,  H05K3/4602 ,  H05K3/465 ,  H05K3/4652 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2203/0108 ,  H05K2203/0551 ,  H05K2203/1189 ,  H01L2924/00

摘要： A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.

公开(公告)号：US20090246212A1

公开(公告)日：2009-10-01

申请号：US12088812

申请日：2006-09-29

申请人： Takaaki Koshiba ,  Atsushi Ito ,  Shimon Sakaguchi ,  Koichi Tanaka ,  Yanling Wu ,  Mayuko Narumoto

发明人： Takaaki Koshiba ,  Atsushi Ito ,  Shimon Sakaguchi ,  Koichi Tanaka ,  Yanling Wu ,  Mayuko Narumoto

IPC分类号： A61K39/00 ,  C12Q1/02 ,  C12N5/00 ,  C12N5/06 ,  C12Q1/68

CPC分类号： G01N33/505 ,  C12N5/0636

摘要： The present invention provides a screening method for a compound capable of inducing regulatory T cells, comprising the following steps:(1) a step for culturing CD4+ T cells having a naïve phenotype in the presence of a test compound, and isolating T cells from the culture product; (2) a step for evaluating the immunosuppressive function of the T cells isolated in the step (1); (3) a step for obtaining the foregoing test compound as a compound capable of inducing regulatory T cells if the results of the evaluation in the step (2) show that the T cells isolated in the step (1) have immunosuppressive function. The present invention also provides a method of producing regulatory T cells, comprising culturing CD4+ T cells having a naïve phenotype in the presence of a rapamycin compound to obtain regulatory T cells. The regulatory T cell produced by the method can be used as an immunomodulator for the prophylaxis or treatment of the rejection in organ transplantation, an allergic disease, an autoimmune disease, a graft-versus-host disease (GVHD), infertility and the like.

摘要翻译： 本发明提供了能够诱导调节性T细胞的化合物的筛选方法，包括以下步骤：（1）在试验化合物存在下培养具有初始表型的CD4 + T细胞的步骤， 文化产品; （2）评价步骤（1）中分离的T细胞的免疫抑制功能的步骤。 （3）如果步骤（2）中的评价结果​​表明在步骤（1）中分离的T细胞具有免疫抑制功能，则获得作为能诱导调节性T细胞的化合物的上述试验化合物的步骤。 本发明还提供了一种产生调节性T细胞的方法，包括在雷帕霉素化合物存在下培养具有初始表型的CD4 + T细胞以获得调节性T细胞。 通过该方法产生的调节性T细胞可用作免疫调节剂，用于预防或治疗器官移植排斥反应，过敏性疾病，自身免疫性疾病，移植物抗宿主病（GVHD），不育症等。

公开(公告)号：US20090164531A1

公开(公告)日：2009-06-25

申请号：US12038403

申请日：2008-02-27

申请人： Koichi Tanaka ,  Koji Nagata ,  Kosuke Sakai

发明人： Koichi Tanaka ,  Koji Nagata ,  Kosuke Sakai

IPC分类号： G06F17/30 ,  G06F15/16

CPC分类号： G06F11/2094 ,  G06F11/1456 ,  G06F11/1464 ,  G06F11/1469 ,  G06F11/1662

摘要： The input of a prescribed type information element is received from an operator via an operator interface. A first storage system outputs a first type information element required to construct a remote copy environment. A second storage system inputs second setting information, which comprises first type information elements and prescribed type information elements, uses the second setting information to execute a second setting, and outputs the second type information element required to construct a remote copy environment. The first storage system inputs first setting information, which comprises the second type information element, and uses the first setting information to execute a first setting. Since the types of information elements required to construct a remote copy environment are exchanged between the storage systems, the number of types of information elements inputted by the operator are less than the number of types of information elements required to construct the remote copy environment.

摘要翻译： 经由操作员界面从操作者接收规定类型的信息要素的输入。 第一存储系统输出构建远程复制环境所需的第一类型信息元素。 第二存储系统输入包括第一类型信息元素和规定类型信息元素的第二设置信息，使用第二设置信息来执行第二设置，并输出构成远程复制环境所需的第二类型信息元素。 第一存储系统输入包括第二类型信息元素的第一设置信息，并且使用第一设置信息来执行第一设置。 由于在存储系统之间交换构建远程复制环境所需的信息元素的类型，所以由操作者输入的信息元素的类型数量小于构建远程复制环境所需的信息元素的数量。

公开(公告)号：US20090061557A1

公开(公告)日：2009-03-05

申请号：US12282176

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L31/18

CPC分类号： H01L21/76254 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.

摘要翻译： 在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入 层。 然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发， 相生长以提供锗基晶体。 锗基晶体层的表面和支撑基板的表面接合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

公开(公告)号：US20090047528A1

公开(公告)日：2009-02-19

申请号：US11997213

申请日：2006-07-28

申请人： Teruo Tachi ,  Koichi Tanaka

发明人： Teruo Tachi ,  Koichi Tanaka

IPC分类号： B32B15/04 ,  C23C16/22

CPC分类号： C23C8/02 ,  B21C25/025 ,  C23C8/26 ,  C23C8/34 ,  Y10T428/31678

摘要： A surface treatment method of an aluminum extruding die having wear resistance and separation resistance is provided. The surface treatment method of an aluminum extruding die includes a first nitriding treatment step for forming a diffusion hardened layer 6 containing carbon and nitrogen at a surface layer portion of a die main body 5 by heating and retaining the die main body 5 made of tool steel in a nitriding gas atmosphere containing carburizing gas, and a second nitriding treatment step for forming a compound layer 7 substantially not containing carbon on a surface of the diffusion hardened layer 6 by heating and retaining the die main body 5 to which the first nitriding treatment was executed in a nitriding gas atmosphere not containing carburizing gas.

摘要翻译： 提供了具有耐磨性和耐分离性的铝挤压模具的表面处理方法。 铝挤压模具的表面处理方法包括：第一氮化处理步骤，通过加热并保持由工具钢制成的模具主体5，在模具主体5的表层部分形成含有碳和氮的扩散硬化层6 在含有渗碳气体的氮化气体气氛中进行第二氮化处理工序，以及第二氮化处理工序，通过加热保持第一氮化处理为原样的模具主体5，在扩散硬化层6的表面上形成基本不含碳的化合物层7 在不含渗碳气体的氮化气体气氛中执行。

公开(公告)号：US20080299742A1

公开(公告)日：2008-12-04

申请号：US12153519

申请日：2008-05-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/86

CPC分类号： H01L21/76254 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/014

摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

摘要翻译： 公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US20080194078A1

公开(公告)日：2008-08-14

申请号：US12010711

申请日：2008-01-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.

摘要翻译： 为了获得大面积地具有高质量Ge基外延膜的半导体衬底，在Si衬底10的主表面上生长SiGe混晶缓冲层和Ge外延膜。 虽然在Ge外延膜11和Si衬底10之间的界面上在Ge外延膜11中引入高密度缺陷，但Ge外延膜在不低于700℃的温度下进行热处理， 不超过900℃导致穿透位错12变为位于Ge外延膜11和Si衬底之间的界面附近的位错环缺陷12'。 为了表面清洁，表面活化等目的，对具有离子注入层的Ge外延膜11和支撑基板20中的至少一个的主表面进行等离子体处理或臭氧处理，之后， Ge外延膜11和支撑基板20的主表面以其表面被确定为接合表面而相互贴合并彼此结合。 然后对接合界面施加外部冲击，使得Ge外延膜沿着氢离子注入界面13分层，从而获得Ge薄膜14。 随后，对Ge薄膜14的表面进行最终表面处理（例如CMP），以消除由氢离子注入引起的损伤，从而得到其表面上具有Ge薄膜14的GeOI基板。