公开(公告)号：US20070172397A1

公开(公告)日：2007-07-26

申请号：US10589032

申请日：2005-02-14

申请人： Yuji Narita ,  Yoshiyuki Takahashi ,  Takeshi Imai ,  Hisanobu Suzuki ,  Yoshitaka Nakamura

发明人： Yuji Narita ,  Yoshiyuki Takahashi ,  Takeshi Imai ,  Hisanobu Suzuki ,  Yoshitaka Nakamura

IPC分类号： B01D53/34 ,  B32B27/04

CPC分类号： F02B37/007 ,  F01N9/002 ,  F01N11/002 ,  F01N13/011 ,  F01N13/107 ,  F01N2900/14 ,  F01N2900/1406 ,  Y02T10/144 ,  Y02T10/47

摘要： Collectors are provided on a pair of exhaust passages extending in parallel from an internal combustion engine respectively. Each of the collectors collects black smoke particles (unclean substance) included in exhaust gas. One of a pair of differential pressure detectors detects a first differential pressure between upstream and downstream of one of the collectors while the other differential pressure detector detects a second differential pressure between upstream and downstream of the other collector. Upon finishing a regeneration process of removing the black smoke particles in each of the collectors, a control computer estimates an exhaust gas flow rate of each of the exhaust passages based on the first differential pressure and the second differential pressure.

摘要翻译： 收集器设置在分别从内燃机平行延伸的一对排气通道上。 每个收集器收集废气中包含的黑烟颗粒（不洁物质）。 一对差压检测器中的一个检测一个收集器的上游和下游之间的第一差压，而另一个差压检测器检测另一收集器的上游和下游之间的第二压差。 在完成除去每个收集器中的黑烟粒子的再生处理之后，控制计算机基于第一差压和第二压差来估计每个排气通道的排气流量。

公开(公告)号：US07192879B2

公开(公告)日：2007-03-20

申请号：US11207871

申请日：2005-08-22

申请人： Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

发明人： Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC分类号： H01L21/302

CPC分类号： B81C1/00626 ,  B81B2201/0235 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/04

摘要： A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.

摘要翻译： 提供一种微结构单元的制造方法。 通过该方法，在包括第一至第三导电层和两个绝缘层的材料基板上进行微加工，其中一个绝缘层介于第一和第二导电层之间，另一个位于第二和第三导电层之间。 该方法包括在不同厚度的材料基底的层上执行的几个蚀刻步骤。

公开(公告)号：US07119443B2

公开(公告)日：2006-10-10

申请号：US10959634

申请日：2004-10-07

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

摘要翻译： 根据以下步骤形成半导体器件。 通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀 仅留下通孔66的内部并形成插头73。 然后，通过溅射法将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，然后，将Ti膜76，Al合金膜75， 并且将TiN膜74图案化以形成第二层布线77和78。

公开(公告)号：US20060199330A1

公开(公告)日：2006-09-07

申请号：US11363996

申请日：2006-03-01

申请人： Yoshitaka Nakamura ,  Yoshihiro Takaishi

发明人： Yoshitaka Nakamura ,  Yoshihiro Takaishi

IPC分类号： H01L21/8242

CPC分类号： H01L28/90 ,  H01L27/10894 ,  H01L27/10897

摘要： A method of manufacturing a semiconductor memory according to the present invention includes steps of forming an insulating film, into which a conductive plug connected to a source or a drain in a transistor in a memory cell region and into which a first conductive layer which will become a part of a circuit in a peripheral circuit region are buried, on a semiconductor substrate, forming a first interlayer insulating film on the insulating film, forming, in the first interlayer insulating film, conductive plugs for connecting a first conductive layer and a second conductive layer arranged in a layer upper than the first interlayer insulating film, forming lower electrode of the capacitor in the first interlayer insulating film after the connection plugs are formed, forming capacitance insulating film, and forming upper electrode of the capacitor.

摘要翻译： 根据本发明的制造半导体存储器的方法包括以下步骤：形成绝缘膜，在绝缘膜中连接到存储单元区域中的晶体管中的源极或漏极的导电插塞并且将成为第一导电层 外围电路区域中的电路的一部分被埋在半导体衬底上，在绝缘膜上形成第一层间绝缘膜，在第一层间绝缘膜中形成用于连接第一导电层和第二导电层的导电插塞 在上述第一层间绝缘膜的上方布置层，在形成连接插塞之后，在第一层间绝缘膜中形成电容器的下部电极，形成电容绝缘膜，形成电容器的上部电极。

公开(公告)号：US07037126B2

公开(公告)日：2006-05-02

申请号：US10470704

申请日：2002-01-29

申请人： Mikio Tsutsumi ,  Hitoshi Momoda ,  Yoshitaka Nakamura

发明人： Mikio Tsutsumi ,  Hitoshi Momoda ,  Yoshitaka Nakamura

IPC分类号： H01R4/60

CPC分类号： H01R39/643 ,  B25J19/0029 ,  B25J19/0041 ,  Y10T403/32975

摘要： The present invention is directed to a rotary joint that includes a power slip ring and an electric signal slip ring, both for passing electricity between a stator and a rotor The system includes a plurality of slip rings (21,31) and a plurality of circumferentially extending fluid flow annular passages (12, 13, 14) formed in axially aligned relaation between the stator and the rotor. Water passages are constituted by some of the annual passages (12,13) and one of the annular passages (14), typically the lowest one, is used an air passage for air under pressure or an air-filled drain so that water leakage can be absorbed into the air passage or drain and does not penetrate into the region of the slip rings. The slip ring (21) with collector rings (22) is used for power and slip rings (31) are used for signals. Water passages are constituted by the annular passages, other than one of the annular passages located towards the power slip ring and the electric signal slip ring.

摘要翻译： 本发明涉及一种旋转接头，其包括用于在定子和转子之间通过的电力滑环和电信号滑环。该系统包括多个滑环（21,31）和多个周向 延伸形成在定子和转子之间的轴向对齐关系中的流体流动环形通道（12,13,14）。 水通道由一些年度通道（12,13）构成，其中一个环形通道（14）通常是最低的通道，用于压力空气的空气通道或充满空气的排水管，从而使漏水可以 被吸收到空气通道或排水管中，并且不会渗入滑环的区域。 具有集电环（22）的滑环（21）用于电力和滑环（31）用于信号。 水通道由除了位于动力滑环和电信号滑环之间的环形通道中的一个外的环形通道构成。

公开(公告)号：US20060022251A1

公开(公告)日：2006-02-02

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L29/94 ,  H01L21/20

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。

公开(公告)号：US06927439B2

公开(公告)日：2005-08-09

申请号：US10923002

申请日：2004-08-23

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US06894423B2

公开(公告)日：2005-05-17

申请号：US10180002

申请日：2002-06-26

申请人： Tetsuo Takeshima ,  Yoshitaka Nakamura ,  Kiyotaka Tajima

发明人： Tetsuo Takeshima ,  Yoshitaka Nakamura ,  Kiyotaka Tajima

IPC分类号： G10K9/122 ,  H01L41/053 ,  H04R7/18 ,  H04R17/00 ,  H01L41/08

CPC分类号： H04R17/00 ,  H01L41/053

摘要： A piezoelectric electroacoustic transducer is miniaturized and has a reduced frequency, and even when a diaphragm has a warp or winding, the resonance frequency is be stabilized. The piezoelectric electroacoustic transducer includes a substantially rectangular piezoelectric diaphragm flexurally vibrating in a thickness direction in response to the application of an alternating signal between electrodes and a casing for accommodating the piezoelectric diaphragm, wherein the casing is provided with supporting members for supporting four corners of the piezoelectric diaphragm.

摘要翻译： 压电电声换能器小型化并且频率降低，并且即使当隔膜具有翘曲或绕组时，谐振频率也被稳定。 压电电声换能器包括响应于在电极和用于容纳压电隔膜的壳体之间施加交替信号而在厚度方向上弯曲振动的基本矩形的压电隔膜，其中壳体设置有支撑构件，用于支撑 压电隔膜

公开(公告)号：US06853081B2

公开(公告)日：2005-02-08

申请号：US10453611

申请日：2003-06-04

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L21/8242 ,  H01L23/522 ,  H01L23/48 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

摘要翻译： 根据以下步骤形成半导体器件。 通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀 仅留下通孔66的内部并形成插头73.然后，将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，通过 溅射法，然后对Ti膜76，Al合金膜75和TiN膜74进行图案化以形成第二层布线77和78。

公开(公告)号：US06825873B2

公开(公告)日：2004-11-30

申请号：US10155130

申请日：2002-05-28

申请人： Yoshitaka Nakamura ,  Naoki Hikishima

发明人： Yoshitaka Nakamura ,  Naoki Hikishima

IPC分类号： H04M714

CPC分类号： H04N7/14 ,  H04N19/27

摘要： A TV phone apparatus includes an image sensing element, ROM, CG processing section, and radio antenna. The image sensing element photographs a real video of a speaker. The ROM stores in advance at least one substitute video of the speaker. The CG processing section extracts substitute video data from the ROM in place of real video data output from the image sensing element and executes graphics processing. The radio antenna transmits the substitute video data output from the CG processing section to a partner of speech communication.

摘要翻译： 电视电话设备包括图像感测元件，ROM，CG处理部分和无线电天线。 图像感测元件拍摄扬声器的真实视频。 ROM预先存储扬声器的至少一个替代视频。 CG处理部分从ROM中提取替代视频数据，代替从图像感测元件输出的实际视频数据，并执行图形处理。 无线电天线将从CG处理部分输出的替代视频数据发送到语音通信的伙伴。