公开(公告)号：US5600455A

公开(公告)日：1997-02-04

申请号：US297956

申请日：1994-08-31

申请人： Tsuyoshi Ishikawa ,  Kayoko Watai ,  Kazuaki Yokoyama

发明人： Tsuyoshi Ishikawa ,  Kayoko Watai ,  Kazuaki Yokoyama

IPC分类号： F21V5/02 ,  F21V8/00 ,  G01D11/28 ,  G02B6/00 ,  G02F1/1335 ,  F21V5/00 ,  F21V7/04

CPC分类号： G02B6/0053 ,  F21V5/02 ,  G01D11/28 ,  G02B6/0031 ,  G02B6/0038 ,  G02B6/0041 ,  G02B6/0061 ,  G02B6/0068

摘要： A transparent member having a multiplicity of prism-like convex portions which are aligned in parallel to each other and formed on at least one of surfaces of the member; the member is used to be disposed between a light emitting surface side of a surface light source device and a liquid crystal display device; and by using the member, it is possible to illuminate the liquid crystal display device in a bright and uniform manner and to prevent that any stripe pattern is appeared.

摘要翻译： 一种透明构件，具有多个棱柱状的凸起部分，它们彼此平行排列并且形成在所述构件的至少一个表面上; 该构件用于设置在面光源装置的发光表面侧和液晶显示装置之间; 并且通过使用该构件，可以以明亮均匀的方式照亮液晶显示装置，并且防止出现任何条纹图案。

公开(公告)号：US5584572A

公开(公告)日：1996-12-17

申请号：US291913

申请日：1994-08-18

申请人： Tsuyoshi Ishikawa

发明人： Tsuyoshi Ishikawa

IPC分类号： F21V7/00 ,  G03B15/05 ,  F21V7/12

CPC分类号： G03B15/05 ,  F21V7/005 ,  G03B2215/0525

摘要： A reflector used in a strobe device has a rounded reflecting portion, a first pair of planar reflecting portions and a second pair of planar reflecting portions. A shape of the rounded reflecting portion is defined by a portion of a cylinder and by the rounded reflecting portion contacting a portion of an outer surface of a light source used in the strobe device. The first pair of planar reflecting portions is connected to the rounded reflecting portion, such that the first pair of planar reflecting portions is tangential to the outer surface of the light source. The second pair of planar reflecting portions is connected at a distal end of the first pair of planar reflecting portions. An opening of the reflector is defined between the distal ends of the second reflecting portions.

摘要翻译： 用于选通装置的反射器具有圆形的反射部分，第一对平面反射部分和第二对平面反射部分。 圆形反射部分的形状由圆柱体的一部分和通过与选通装置中使用的光源的外表面的一部分接触的圆形反射部分限定。 第一对平面反射部分连接到圆形反射部分，使得第一对平面反射部分与光源的外表面相切。 第二对平面反射部分在第一对平面反射部分的远端连接。 反射器的开口限定在第二反射部分的远端之间。

公开(公告)号：US5572411A

公开(公告)日：1996-11-05

申请号：US362446

申请日：1995-01-05

申请人： Kayoko Watai ,  Tsuyoshi Ishikawa

发明人： Kayoko Watai ,  Tsuyoshi Ishikawa

IPC分类号： G02B6/00 ,  F21V8/00 ,  G02B5/02 ,  G02B6/04 ,  G02F1/1335 ,  G02F1/13357 ,  G09F9/00 ,  F21V7/04

CPC分类号： G02B6/0053 ,  G02B5/0231 ,  G02F1/133615 ,  G02B6/0001 ,  G02F2001/133607

摘要： The present invention has its purpose to obtain a bright luminescent in a surface light source device using a light conducting member.In the surface light source device according to the present invention, a light source is disposed in the vicinity of a light incident edge surface of the light conducting member, a light diffusing plate is arranged on the light emitting side of the light conducting member, and a prism sheet having a multiplicity of convex portions is provided on a side of the light diffusing member, which is opposite to the side where the light conducting member is arranged: and further each of the convex portion of the prism sheet is arranged such that the inclined angle on the light source side is smaller than the inclined angle on the opposite side thereof. Therefore, the luminescent light is directed to the portion to be illuminated of the liquid crystal display apparatus and thus a bright luminescent can be obtained.

摘要翻译： PCT No.PCT / JP94 / 00743 Sec。 371 1995年1月5日第 102（e）日期1995年1月5日PCT 1994年5月6日PCT PCT。 公开号WO94 / 27171 日期：1994年11月24日本发明的目的是在使用导光部件的面光源装置中获得亮发光。 在本发明的面光源装置中，在导光部件的光入射边缘面附近配置有光源，在导光部件的发光侧配置有光扩散板， 具有多个凸部的棱镜片设置在光漫射构件的与布置导光构件的一侧相反的一侧上，并且棱镜片的每个凸部都布置成使得 光源侧的倾斜角小于其相对侧的倾斜角度。 因此，发光光被引导到液晶显示装置的被照明部分，因此可以获得明亮的发光。

公开(公告)号：US5414599A

公开(公告)日：1995-05-09

申请号：US910746

申请日：1992-07-08

申请人： Isamu Kaneko ,  Hideaki Katoh ,  Kazuaki Yokoyama ,  Tsuyoshi Ishikawa

发明人： Isamu Kaneko ,  Hideaki Katoh ,  Kazuaki Yokoyama ,  Tsuyoshi Ishikawa

IPC分类号： F21V8/00 ,  G02B6/00 ,  G09F13/04

CPC分类号： G02B6/0046 ,  G02B6/0053 ,  G09F13/0409 ,  G02B6/0038 ,  G02B6/0068

摘要： A surface light source device comprising at least one light source, a transparent panel, a diffusing panel and a reflecting surface. This surface light source device is configured so that brightness is enhanced in a direction perpendicular to the diffusing panel by disposing, on the side of a front surface of the transparent panel, a transparent sheet which has protrusions having a saw-tooth-like sectional shape formed on one surface thereof.

摘要翻译： 一种表面光源装置，包括至少一个光源，透明板，扩散板和反射表面。 该面光源装置被配置为通过在透明面板的前表面侧设置具有锯齿状截面形状的突起的透明片，从而使垂直于扩散板的方向的亮度增强 在其一个表面上形成。

公开(公告)号：US5402324A

公开(公告)日：1995-03-28

申请号：US252881

申请日：1994-06-02

申请人： Kazuaki Yokoyama ,  Tsuyoshi Ishikawa ,  Kayoko Watai

发明人： Kazuaki Yokoyama ,  Tsuyoshi Ishikawa ,  Kayoko Watai

IPC分类号： F21V8/00 ,  F21V9/14 ,  G02B6/00 ,  G02F1/1335 ,  G02F1/13357

CPC分类号： G02B6/0053 ,  F21V9/14 ,  G02B6/0051 ,  G02F2001/133507 ,  G02F2001/133607

摘要： A surface illuminate device illuminates a liquid crystal display panel by diffused light produced through a diffusing plate disposed on the front of an illuminant section. A prism sheet having many triangular prisms is disposed on the exit side of the diffusing plate so that the longitudinal direction of each prism is nearly parallel to the plane of polarization of a polarizing plate placed on the prism sheet side of the liquid crystal display panel. Thus, the surface illuminant device can provide bright illumination suitable for the backlight of the liquid crystal display panel.

摘要翻译： 表面照明装置通过设置在照明部的前方的漫射板产生的漫射光照亮液晶显示面板。 具有许多三角棱镜的棱镜片设置在扩散板的出射侧，使得每个棱镜的纵向几乎平行于放置在液晶显示面板的棱镜片侧的偏振片的偏振面。 因此，表面光源装置能够提供适合于液晶显示面板的背光源的亮度照明。

公开(公告)号：US08972486B2

公开(公告)日：2015-03-03

申请号：US13069516

申请日：2011-03-23

申请人： Tsuyoshi Ishikawa

发明人： Tsuyoshi Ishikawa

IPC分类号： G06F15/16 ,  G06F3/00 ,  G06F17/30

CPC分类号： G06F17/3089

摘要： A terminal apparatus includes a communication unit, a storage unit, and a controller. The communication unit is capable of communicating with a web server and receives information of a web page from the web server. The controller displays the web page in a window displayed on a display unit, generates an image of the web page before a change each time the web page is changed to a different web page, associates the generated image with a change history of the web page to store the generated image in the storage unit, and reads the image corresponding to the change history from the storage unit based on an instruction made by a user to display the image, to display the image on the display unit.

摘要翻译： 终端装置包括通信单元，存储单元和控制器。 通信单元能够与web服务器进行通信，并且从Web服务器接收网页的信息。 控制器在显示单元上显示的窗口中显示网页，每当网页改变为不同的网页时，在更改之前生成网页的图像，将生成的图像与网页的变化历史相关联 将生成的图像存储在存储单元中，并且基于由用户进行的用于显示图像的指令从存储单元读取与改变历史相对应的图像，以在显示单元上显示图像。

公开(公告)号：US08952430B2

公开(公告)日：2015-02-10

申请号：US13703284

申请日：2011-06-02

申请人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa

发明人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/76 ,  H01L29/16 ,  H01L29/49 ,  H01L29/40 ,  H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423

CPC分类号： H01L29/1608 ,  H01L21/046 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/49 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.

摘要翻译： 本申请涉及用于提高半导体器件耐受电压的技术。 半导体器件包括围绕单元区域的终止区域。 单元区域设置有多个主沟槽。 终端区域设置有围绕单元区域的一个或多个终止沟槽。 终端沟槽设置在一个或多个端接沟槽的最内圆周处。 体区域设置在漂移区域的表面上。 每个主沟槽到达漂移区域。 在每个主沟槽内设置栅电极。 端接沟槽到达漂移区域。 侧壁和终端沟槽的底表面被绝缘层覆盖。 覆盖终端沟槽的底面的绝缘层的表面被掩埋电极覆盖。 将栅极电位施加到掩埋电极。

公开(公告)号：US08710586B2

公开(公告)日：2014-04-29

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/15

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US08518809B2

公开(公告)日：2013-08-27

申请号：US13308721

申请日：2011-12-01

申请人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/0475 ,  H01L29/04

摘要： A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

摘要翻译： SiC单晶的制造方法包括制备SiC衬底，将离子注入到SiC衬底的表面部分中以形成离子注入层，通过退火激活注入到SiC衬底的表面部分中的离子，化学蚀刻表面 以形成由SiC衬底中的螺纹位错引起的蚀刻坑，并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层，所述SiC生长层包括蚀刻的内壁 以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。

公开(公告)号：US20130001592A1

公开(公告)日：2013-01-03

申请号：US13531793

申请日：2012-06-25

申请人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7825 ,  H01L29/7827

摘要： In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

摘要翻译： 在碳化硅半导体器件中，多个沟槽在一个方向上具有纵向方向并且被布置成条纹图案。 每个沟槽具有在纵向方向上延伸的第一和第二侧壁。 第一侧壁与（11-20）面和（1-100）面中的一个成锐角，第二侧壁与（11-20）面和 （1-100）平面，第一锐角小于第二锐角。 第一导电类型区域仅与每个沟槽的第一和第二侧壁中的第一侧壁接触，并且仅在第一和第二侧壁中的第一侧壁上形成电流通路。