Housing wheel engine
    82.
    发明申请
    Housing wheel engine 有权
    轴轮发动机

    公开(公告)号:US20080251043A1

    公开(公告)日:2008-10-16

    申请号:US11786977

    申请日:2007-04-13

    申请人: Yan Li

    发明人: Yan Li

    摘要: Disclosed herein is a housing wheel engine that has one wheel shaped combustion housing, the housing wheel engine can hold several pistons which's both sides working inside the combustion housing. The housing wheel engine transmits its rotating movement directly to the driveshaft by planetary gearsets. A four strokes time mechanism provided by planetary gearsets.

    摘要翻译: 这里公开了具有一个轮形燃烧壳体的壳轮发动机,该壳轮发动机可以容纳几个在燃烧壳体内部工作的两个活塞。 外壳轮发动机通过行星齿轮组将其旋转运动直接传递到驱动轴。 由行星齿轮组提供的四冲程时间机构。

    Flexible and area efficient column redundancy for non-volatile memories
    84.
    发明授权
    Flexible and area efficient column redundancy for non-volatile memories 有权
    非易失性存储器的灵活和区域高效的列冗余

    公开(公告)号:US07405985B2

    公开(公告)日:2008-07-29

    申请号:US11619524

    申请日:2007-01-03

    IPC分类号: G11C29/00

    CPC分类号: G11C7/1036 G11C29/848

    摘要: A non-volatile memory wherein bad columns in the array of memory cells can be removed is described. Additionally, substitute redundant columns can replace the removed columns. Both of these processes are performed on the memory in a manner that is externally transparent and, consequently, need not be managed externally by the host or controller to which the memory is attached. An inventory of the bad columns can be maintained on the memory. At power up, the list of bad columns is used to fuse out the bad columns. The memory may also contain a number of redundant columns that can be used to replace the bad columns.

    摘要翻译: 描述了可以去除存储器单元阵列中的不良列的非易失性存储器。 另外,替换冗余列可以替换已删除的列。 这些处理都以外部透明的方式在存储器上执行,因此不需要由附加存储器的主机或控制器在外部进行管理。 可以在内存上维护坏列的清单。 上电时,不良列的列表用于对不良列进行融合。 内存还可能包含一些可用于替换不良列的冗余列。

    NON-VOLATILE STORAGE SYSTEM WITH INITIAL PROGRAMMING VOLTAGE BASED ON TRIAL
    85.
    发明申请
    NON-VOLATILE STORAGE SYSTEM WITH INITIAL PROGRAMMING VOLTAGE BASED ON TRIAL 有权
    基于试验的具有初始编程电压的非易失性存储系统

    公开(公告)号:US20080158980A1

    公开(公告)日:2008-07-03

    申请号:US11616665

    申请日:2006-12-27

    申请人: Teruhiko Kamei Yan Li

    发明人: Teruhiko Kamei Yan Li

    IPC分类号: G11C11/34

    摘要: A trial programming process is performed for a first set of one or more non-volatile storage elements to test usage of the non-volatile storage system. Based on this trial programming, a programming signal is calibrated by adjusting its initial magnitude. The calibrated programming signal is then used to program a second set of non-volatile storage elements (which may or may not include the first set).

    摘要翻译: 对第一组一个或多个非易失性存储元件执行试用编程过程以测试非易失性存储系统的使用。 基于该试用编程,通过调整编程信号的初始幅度来校准编程信号。 然后,校准的编程信号用于编程第二组非易失性存储元件(其可以包括或可以不包括第一组)。

    Method and apparatus for measuring a retinal sublayer characteristic
    86.
    发明授权
    Method and apparatus for measuring a retinal sublayer characteristic 有权
    用于测量视网膜亚层特征的方法和装置

    公开(公告)号:US07347548B2

    公开(公告)日:2008-03-25

    申请号:US10833524

    申请日:2004-04-28

    IPC分类号: A61B3/10

    CPC分类号: A61B3/102

    摘要: Methods and systems are provided for measuring a retinal sublayer characteristic of an eye. A plurality of axial scans are performed over an area of the retina of the eye. Reflections are measured during the axial scans to determine a plurality of sets of reflection intensity values. A given set of reflection intensity values is associated with one of the plurality of axial scans. A progressive refinement boundary detection algorithm is performed using the plurality of sets of reflection intensity values to determine at least one boundary location associated with the retinal sublayer for each of the plurality of sets of reflection intensity values. The retinal sublayer characteristic is determined in response to the determined boundary locations.

    摘要翻译: 提供了用于测量眼睛的视网膜亚层特征的方法和系统。 在眼睛的视网膜的一个区域上执行多个轴向扫描。 在轴向扫描期间测量反射以确定多组反射强度值。 给定的一组反射强度值与多个轴向扫描中的一个相关联。 使用多组反射强度值执行逐行细化边界检测算法,以针对多组反射强度值中的每一组来确定与视网膜子层相关联的至少一个边界位置。 响应于确定的边界位置来确定视网膜亚层特征。

    METHODS IN A PSEUDO RANDOM AND COMMAND DRIVEN BIT COMPENSATION FOR THE CYCLING EFFECTS IN FLASH MEMORY
    87.
    发明申请
    METHODS IN A PSEUDO RANDOM AND COMMAND DRIVEN BIT COMPENSATION FOR THE CYCLING EFFECTS IN FLASH MEMORY 有权
    闪存中循环效应的PSEUDO随机和命令驱动位补偿方法

    公开(公告)号:US20080065813A1

    公开(公告)日:2008-03-13

    申请号:US11530399

    申请日:2006-09-08

    IPC分类号: G06F12/00

    CPC分类号: G11C7/1006 G11C16/3418

    摘要: Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generated pseudo randomization or user driven randomization in different embodiments. User driven commands, the timing of which cannot be predicted may be used to trigger and achieve a high level of randomization. Randomly altering the encoding scheme of the data prevents repeated and long term storage of specific data patterns. Even if a user wishes to store the same information for long periods, or to repeatedly store it, it will be randomly encoded with different encoding schemes, and the data pattern will therefore be varied.

    摘要翻译: 易于实现的闪速存储器EEPROM内的随机化可以减少由于特定数据模式的重复和长期存储而导致的NAND串电阻效应,程序干扰,用户读取干扰以及浮动栅极与浮动栅极耦合。 在不同的实施例中,随机化可以是代码生成的伪随机化或用户驱动的随机化。 用户驱动的命令,其定时不能预测可用于触发和实现高水平的随机化。 随机改变数据的编码方案可防止特定数据模式的重复和长期存储。 即使用户希望长时间存储相同的信息,也可以重复存储,将以不同的编码方式进行随机编码,因此数据模式将会变化。

    Method for Non-Volatile Memory With Reduced Erase/Write Cycling During Trimming of Initial Programming Voltage
    88.
    发明申请
    Method for Non-Volatile Memory With Reduced Erase/Write Cycling During Trimming of Initial Programming Voltage 有权
    用于在初始编程电压修整期间减少擦除/写入循环的非易失性存储器的方法

    公开(公告)号:US20080062768A1

    公开(公告)日:2008-03-13

    申请号:US11531217

    申请日:2006-09-12

    IPC分类号: G11C11/34

    摘要: High performance non-volatile memory devices have the programming voltages trimmed for individual types of memory pages and word lines. A group of word lines within each erasable block of memory are tested in successive program loops to minimize the problem of incurring excessive number of erase/program cycles. An optimum programming voltage for a given type of memory pages is derived from statistical results of a sample of similar of memory pages.

    摘要翻译: 高性能非易失性存储器件具有为各种类型的存储器页和字线而修整的编程电压。 每个可擦除存储器块中的一组字线在连续的程序循环中进行测试,以最大限度地减少产生过多擦除/编程周期的问题。 对于给定类型的存储器页的最佳编程电压是从类似存储器页的样本的统计结果得出的。

    SYSTEM THAT COMPENSATES FOR COUPLING DURING PROGRAMMING
    89.
    发明申请
    SYSTEM THAT COMPENSATES FOR COUPLING DURING PROGRAMMING 有权
    在编程期间用于耦合的系统

    公开(公告)号:US20080019186A1

    公开(公告)日:2008-01-24

    申请号:US11459002

    申请日:2006-07-20

    申请人: Yan Li

    发明人: Yan Li

    IPC分类号: G11C11/34 G11C16/04 G11C16/06

    摘要: Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

    摘要翻译: 存在于非易失性存储单元的浮动栅极(或其他电荷存储元件)上的表观电荷的变化可能发生,因为基于存储在相邻浮动栅极(或其它相邻电荷存储元件)中的电荷的电场的耦合 )。 为了补偿该耦合,给定存储器单元的读取或编程过程可以考虑相邻存储器单元的编程状态。 为了确定是否需要补偿,可以执行包括感测关于相邻存储器单元的编程状态的信息(例如,在相邻位线或其他位置上)的处理。

    Method for programming of multi-state non-volatile memory using smart verify
    90.
    发明授权
    Method for programming of multi-state non-volatile memory using smart verify 有权
    使用智能验证来编程多状态非易失性存储器的方法

    公开(公告)号:US07301817B2

    公开(公告)日:2007-11-27

    申请号:US11260658

    申请日:2005-10-27

    申请人: Yan Li Long Pham

    发明人: Yan Li Long Pham

    IPC分类号: G11C16/06

    摘要: In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.

    摘要翻译: 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一V TH分布内的电压阈值(V TH TH TH),或 较高的中间V TH分配。 随后,具有第一V TH分布的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二V TH分配。 具有中间V TH分布的非易失性存储元件被编程到第三和第四V分布。 专门识别和跟踪正在编程到第三VTH分配的非易失性存储元件。 正在编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个转移到第三V TH分布之后启动, 中间V TH分配。