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198 条记录 (耗时 0.038 秒)

    Edge bead removal by an electro polishing process
    81.
    发明授权
    Edge bead removal by an electro polishing process 有权
    通过电抛光工艺去除边缘珠

    公开(公告)号：US07303462B2

    公开(公告)日：2007-12-04

    申请号：US11087878

    申请日：2005-03-22

    申请人： Alain Duboust ,  Antoine P. Manens ,  Liang-Yuh Chen

    发明人： Alain Duboust ,  Antoine P. Manens ,  Liang-Yuh Chen

    IPC分类号： B24B1/00 ,  B23H3/00 ,  C25D17/00

    CPC分类号： B24B37/042 ,  B23H5/08 ,  B24B37/046

    摘要： A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.

    摘要翻译： 公开了一种用于使用构造成电抛光衬底边缘的电极沿着衬底的边缘去除沉积的导电层的方法和装置。 基板边缘的电抛光可以在基板表面的电化学机械处理（Ecmp）期间同时发生。 在一个实施例中，电源在衬底和至少两个电极之间施加偏压。 电极以足够的电位形成靠近衬底边缘的第一电极区域，以电抛光衬底边缘，从而从衬底边缘去除导电层。 具有比第一电极区域更低的电位的第二电极区在处理期间靠近衬底面对齐以使得衬底面的Ecmp。

    Process for high copper removal rate with good planarization and surface finish
    86.
    发明申请
    Process for high copper removal rate with good planarization and surface finish 审中-公开
    具有良好的平坦化和表面光洁度的高铜去除率的工艺

    公开(公告)号：US20070235344A1

    公开(公告)日：2007-10-11

    申请号：US11399560

    申请日：2006-04-06

    申请人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    发明人： Renhe Jia ,  You Wang ,  Gerald Alonzo ,  Yongqi Hu ,  Zhihong Wang ,  Jie Diao ,  Stan D Tsai ,  Alpay Yilmaz ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

    IPC分类号： B23H5/08

    CPC分类号： B23H5/08 ,  C25F3/02 ,  H01L21/32125

    摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.

    摘要翻译： 公开了一种用于电化学机械抛光（ECMP）的方法。 通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。 通常，增加压板和头部的表面速度将增加表面平滑度。 此外，增加晶片上的电流密度将增加表面平滑度。 在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。 对于铜，可以实现10,000 / min以上的去除率。

    Conductive pad with high abrasion
    88.
    发明申请
    Conductive pad with high abrasion 审中-公开
    高耐磨导电垫

    公开(公告)号：US20050194681A1

    公开(公告)日：2005-09-08

    申请号：US11066599

    申请日：2005-02-25

    申请人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    发明人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    IPC分类号： H01L23/48

    CPC分类号： B24B37/22 ,  B23H5/08 ,  H01L21/67155

    摘要： A method and apparatus for a planarizing or polishing article for Electrochemical Mechanical Planarization (ECMP) is disclosed. The polishing article is a pad assembly having a plurality of conductive domains and a plurality of abrasive domains on a processing surface. The abrasive domains and the conductive domains comprise a plurality of contact elements that are adapted to bias a semiconductor substrate while also providing abrasive qualities to enhance removal of material deposited on the substrate.

    摘要翻译： 公开了一种用于电化学机械平面化（ECMP）的平面化或抛光制品的方法和装置。 抛光制品是在处理表面上具有多个导电区域和多个磨料区域的垫组件。 研磨区域和导电区域包括适于偏置半导体衬底的多个接触元件，同时还提供磨料质量以增强沉积在衬底上的材料的去除。

    Full Sequence Metal and Barrier Layer Electrochemical Mechanical Processing
    90.
    发明申请
    Full Sequence Metal and Barrier Layer Electrochemical Mechanical Processing 失效
    全序列金属和屏障层电化学机械加工

    公开(公告)号：US20060260951A1

    公开(公告)日：2006-11-23

    申请号：US11425682

    申请日：2006-06-21

    申请人： Feng Liu ,  Liang-Yuh Chen ,  Stan Tsai ,  Yongqi Hu

    发明人： Feng Liu ,  Liang-Yuh Chen ,  Stan Tsai ,  Yongqi Hu

    IPC分类号： B23H3/02

    CPC分类号： B23H5/08 ,  C25F7/00

    摘要： A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.

    摘要翻译： 提供了一种用于电化学处理金属和阻隔材料的方法和装置。 在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在衬底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，将衬底压在处理衬垫组件上， 所述衬底和焊盘组件与其接触并且在屏障处理站中的第一电化学处理步骤期间电化学去除所述暴露层的一部分。