BURST ADDRESS GENERATOR AND TEST APPARATUS INCLUDING THE SAME
    83.
    发明申请
    BURST ADDRESS GENERATOR AND TEST APPARATUS INCLUDING THE SAME 有权
    BURST地址发生器和测试装置,包括它们

    公开(公告)号:US20110158014A1

    公开(公告)日:2011-06-30

    申请号:US12830667

    申请日:2010-07-06

    IPC分类号: G11C29/00 G11C8/18

    摘要: A burst address generator includes a burst bit counter for receiving at least one burst bit, and increasing or decreasing the at least one burst bit, a burst bit splitter for receiving the increased or decreased at least one burst bit from the burst bit counter, and dividing the increased or decreased at least one burst bit into an X burst bit and a Y burst bit, and a selector for receiving an X address, a Y address, the X burst bit, and the Y burst bit, and generating an X burst address based on the X address and the X burst bit and a Y burst address based on the Y address and the Y burst bit.

    摘要翻译: 突发地址发生器包括用于接收至少一个脉冲串比特的脉冲串比特计数器,以及增加或减少所述至少一个脉冲串比特,脉冲串比特分离器,用于从脉冲串比特计数器接收增加或减少的至少一个脉冲串比特;以及 将增加或减少的至少一个突发比特分成X突发比特和Y突发比特,以及用于接收X地址,Y地址,X突发比特和Y突发比特的选择器,并产生X突发 基于X地址和X突发位的地址,以及基于Y地址和Y突发位的Y突发地址。

    Electrowetting optical device and method of controlling voltage of the same
    85.
    发明授权
    Electrowetting optical device and method of controlling voltage of the same 有权
    电动光学器件及其控制电压的方法

    公开(公告)号:US07593153B2

    公开(公告)日:2009-09-22

    申请号:US11689661

    申请日:2007-03-22

    申请人: Jae-young Choi

    发明人: Jae-young Choi

    IPC分类号: G02B26/02

    CPC分类号: G02B26/005

    摘要: An electrowetting optical device includes a cell surrounded by a light-incident surface, a light-exit surface, and a plurality of side surfaces, an electrode portion formed along the light-incident surface, the electrode portion including a plurality of electrodes, an insulation layer covering at least a portion of the electrode portion, an oil layer within the cell, the oil layer contacting the electrode portion, an aqueous solution layer filled in the cell, the aqueous solution layer contacting the oil layer, and a light source emitting light onto the light-incident surface. A method of controlling a voltage of the electrowetting optical device is also provided.

    摘要翻译: 电润湿光学元件包括由光入射面,光出射面和多个侧面围绕的单元,沿着光入射面形成的电极部,电极部分包括多个电极,绝缘体 覆盖电极部分的至少一部分,电池内的油层,与电极部分接触的油层,填充在电池中的水溶液层,与油层接触的水溶液层和发射光的光源 到光入射表面。 还提供了一种控制电润湿光学装置的电压的方法。

    Metallic nickel powders, method for preparing the same, conductive paste, and MLCC
    88.
    发明申请
    Metallic nickel powders, method for preparing the same, conductive paste, and MLCC 审中-公开
    金属镍粉末,其制备方法,导电浆料和MLCC

    公开(公告)号:US20080043402A1

    公开(公告)日:2008-02-21

    申请号:US11802402

    申请日:2007-05-22

    IPC分类号: H01G4/008 C22C19/03 H01B1/02

    摘要: Provided are a method for preparing metallic nickel powders capable of decreasing the content of an alkaline metal in the metallic nickel powders, metallic nickel powders with the low content of an alkaline metal, a conductive paste including metallic nickel powders with the low content of an alkaline metal, and a multi-layer ceramic capacitor (MLCC) including a nickel inner electrode with the low content of an alkaline metal. The method for preparing the metallic nickel powders includes heating a mixture including an organic base, a nickel precursor compound, and a polyol. Wherein, the nickel precursor compound is converted to the metallic nickel powders through reduction by the organic base and the polyol. In the method, the organic base is used instead of the hydroxide of an alkaline metal such as NaOH and KOH. Therefore, the content of an alkaline metal such as sodium and potassium that can be incorporated as an impurity into the metallic nickel powders can be significantly reduced.

    摘要翻译: 提供了一种能够降低金属镍粉末中的碱金属含量的金属镍粉末的方法,碱金属含量低的金属镍粉末,含有碱性低的金属镍粉末的导电膏 金属和包含碱金属含量低的镍内电极的多层陶瓷电容器(MLCC)。 制备金属镍粉末的方法包括加热包括有机碱,镍前体化合物和多元醇的混合物。 其中,镍前体化合物通过有机碱和多元醇的还原转化为金属镍粉末。 在该方法中,使用有机碱代替NaOH和KOH等碱金属的氢氧化物。 因此,可以显着降低作为杂质掺入到金属镍粉末中的碱金属如钠和钾的含量。

    Memory device having nanocrystals and methods of manufacturing the same
    89.
    发明申请
    Memory device having nanocrystals and methods of manufacturing the same 有权
    具有纳米晶体的记忆装置及其制造方法

    公开(公告)号:US20070257297A1

    公开(公告)日:2007-11-08

    申请号:US11711714

    申请日:2007-02-28

    IPC分类号: H01L21/336 H01L29/76

    摘要: The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

    摘要翻译: 该存储装置包括一基板中的一源极区和一漏极区,彼此间隔开; 形成在所述基板的表面上的存储单元,其中所述存储单元连接所述源极区域和所述漏极区域并且包括多个纳米晶体; 形成在存储单元上的控制栅极。 存储单元包括形成在基板上的第一隧穿氧化层; 形成在第一隧道氧化物层上的第二隧穿氧化物层; 以及形成在第二隧道氧化物层上的控制氧化物层。 控制氧化物层包括纳米晶体。 具有增加静电吸引力的氨基硅烷基团的第二隧道氧化物层可以是亲水性的,能够形成纳米晶体的单层。