公开(公告)号：US06992311B1

公开(公告)日：2006-01-31

申请号：US11037491

申请日：2005-01-18

Applicant: Philip J. Ring ,  Alexander S. Perel

Inventor： Philip J. Ring ,  Alexander S. Perel

IPC: H01J37/317 ,  H01J37/36

CPC classification number: H01J37/3171 ,  H01J2237/022

Abstract: A method for cleaning an ion implantation, comprising providing an ion implantation system, wherein the ion implantation system comprises one or more components having one or more contaminants disposed thereon. A process species is provided to the ion implantation system, wherein the process species is otherwise utilized to implant ions into a workpiece. Ions are formed from the process species, therein defining an ion source. An ion beam is then extracted from the ion source via an application of an extraction voltage to an ion extraction assembly associated with the ion source. The extraction voltage is further modulated, wherein a trajectory of the ion beam is oscillated within a predetermined range. The ion beam is consequently swept across the one or more components, thus substantially removing the one or more contaminants therefrom.

Abstract translation: 一种用于清洁离子注入的方法，包括提供离子注入系统，其中所述离子注入系统包括其上布置有一种或多种污染物的一种或多种组分。 向离子注入系统提供过程物质，其中处理物质另外用于将离子注入到工件中。 离子由过程物质形成，其中限定离子源。 然后通过向与离子源相关联的离子提取组件施加提取电压从离子源提取离子束。 提取电压被进一步调制，其中离子束的轨迹在预定范围内振荡。 离子束因此扫过一个或多个组件，从而基本上从其中除去一种或多种污染物。

公开(公告)号：US06992309B1

公开(公告)日：2006-01-31

申请号：US10917597

申请日：2004-08-13

Applicant: Klaus Petry ,  Joseph Ferrara ,  Klaus Becker

Inventor： Klaus Petry ,  Joseph Ferrara ,  Klaus Becker

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/20242 ,  H01J2237/24528 ,  H01J2237/31703

Abstract: Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.

Abstract translation: 还提出了测量系统和方法，用于在处理室中的工件位置处沿着曲线路径的多个点处测量扫描离子束。 所示的剂量测定系统包括传感器和安装设备，其支撑传感器并且选择性地将传感器定位在沿着曲线路径的多个点处，其中安装设备可以选择性地将传感器定位成朝向扫描离子束的顶点 。

公开(公告)号：US06958481B2

公开(公告)日：2005-10-25

申请号：US09934785

申请日：2001-08-22

Applicant: Thomas N. Horsky ,  Alexander S. Perel ,  William K. Loizides

Inventor： Thomas N. Horsky ,  Alexander S. Perel ,  William K. Loizides

IPC: H01J37/30 ,  H01J27/08 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01J27/00 ,  H61N5/00

CPC classification number: H01J27/08

Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.

Abstract translation: 提供了一种用于离子注入机的离子源（50），其包括位于远处的蒸发器（51）和通过进料管（62）连接到蒸发器的离子发生器（53）。 蒸发器包括用于接收诸如十硼烷的固体源材料和升华（蒸发）十硼烷的升华器（52）。 提供加热机构用于加热升华器和将升华器连接到离子发生器的进料管，以保持蒸发的十硼烷的合适温度。 电离器（53）包括具有用于接收蒸发的十硼烷的入口（119）的主体（96） 电离室（108），其中蒸发的十硼烷可以被能量发射元件（110）电离以产生等离子体; 以及用于提取由等离子体组成的离子束的出射孔（126）。 提供冷却机构（100,104），用于在蒸发的十硼烷的电离期间降低电离室（108）的壁（128）的温度（例如，低于350℃），以防止汽化的十硼烷分子分解成 原子硼离子 此外，能量发射元件以足够低的功率水平操作以最小化电离室（108）内的等离子体密度，以防止蒸发的十硼烷分子由等离子体本身的附加解离。

公开(公告)号：US06900444B2

公开(公告)日：2005-05-31

申请号：US10869368

申请日：2004-06-16

Applicant: Joseph Ferrara ,  Robert John Mitchell

Inventor： Joseph Ferrara ,  Robert John Mitchell

IPC: G01J1/00 ,  G01N21/00 ,  H01J37/00 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20221 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。 工件支撑结构还包括第二旋转构件，其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，其延伸到注入室中，第三构件包括支撑工件的可旋转驱动装置，其具有偏离第一旋转构件的旋转轴线的旋转轴线。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

公开(公告)号：US20050110292A1

公开(公告)日：2005-05-26

申请号：US10981231

申请日：2004-11-04

Applicant: Paul Baumann ,  Mihaly Deak ,  Michel Pharand ,  Donald Polner

Inventor： Paul Baumann ,  Mihaly Deak ,  Michel Pharand ,  Donald Polner

IPC: B25J9/00 ,  B25J15/06 ,  H01L21/683 ,  B65H3/08

CPC classification number: B25J9/0012 ,  B25J15/0616 ,  H01L21/6838

Abstract: An end effector for installation on a robotic arm for transporting a plurality of semiconductor wafers from one location to another features a ceramic end effector body portion that includes a plurality of wafer engaging fingers that each feature wafer support pads. The wafer support pads are adapted to support a semiconductor wafer surface, and at least one of the support pads has a vacuum orifice. The pads are replaceable and/or removable in case of damage or contamination. The support pads are attached to the body in such a way as to allow differential thermal expansion so as to prevent introduction of stress into the components. Typically, a wire spring is employed to secure the pad to the end effector. The body portion features an interior vacuum passageway having a first end that is adapted to connect to a vacuum source and a second end that terminates at the vacuum orifices such that a reduced gas pressure at the first end causes a vacuum to be exerted at the vacuum orifices. The interior passageway is formed from a groove in the end effector body portion and an end effector backplate that is sealingly connected to the end effector body portion to completely cover the groove from the first end to the second end. The ceramic body portion can be made of alumina or silicon carbide.

Abstract translation: 用于安装在机器人手臂上用于将多个半导体晶片从一个位置传送到另一个位置的端部执行器具有陶瓷端部执行器主体部分，其包括多个晶片接合指状物，每个晶片接合指状物都具有晶片支撑垫。 晶片支撑垫适于支撑半导体晶片表面，并且至少一个支撑垫具有真空孔。 在损坏或污染的情况下，垫可更换和/或拆卸。 支撑垫以允许不同的热膨胀的方式附接到主体，以防止将应力引入部件中。 通常，使用线弹簧将垫固定到末端执行器。 主体部分具有内部真空通道，其具有适于连接到真空源的第一端和终止于真空小孔处的第二端，使得第一端处的减小的气体压力在真空下施加真空 孔。 内部通道由末端执行器主体部分中的凹槽和端部执行器后板形成，该后端板执行器密封地连接到端部执行器主体部分，以从第一端到第二端完全覆盖凹槽。 陶瓷体部分可以由氧化铝或碳化硅制成。

公开(公告)号：US06881966B2

公开(公告)日：2005-04-19

申请号：US10461702

申请日：2003-06-13

Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

公开(公告)号：US06855916B1

公开(公告)日：2005-02-15

申请号：US10732161

申请日：2003-12-10

Applicant: Brian Matthews ,  James R. Willis ,  Paul E. Lustiber

Inventor： Brian Matthews ,  James R. Willis ,  Paul E. Lustiber

IPC: F27B17/00 ,  F27D19/00 ,  H01L21/00 ,  F27B5/14

CPC classification number: H01L21/67248 ,  F27B17/0025 ,  F27D19/00 ,  H01L21/67109

Abstract: A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.

Abstract translation: 用于热处理衬底的方法提供目标衬底温度并且在热处理系统内产生衬底的移动分布。 向衬底提供一定量的热量，并且测量与衬底上的一个或多个相应位置相关联的一个或多个温度。 进一步产生预测温度曲线，其中基板的预测温度基于所提供的热量和一个或多个测量温度。 基于预测的温度曲线，进一步调节提供​​给基板的热量，其中基板通常根据预期的基板温度曲线热加工。 通过控制热处理系统内的基板的位置，可以进一步调节提供​​给基板的热量。

公开(公告)号：US20040099283A1

公开(公告)日：2004-05-27

申请号：US10065861

申请日：2002-11-26

Applicant: Axcelis Technologies, Inc.

Inventor： Carlo Waldfried ,  Qingyaun Han ,  John Hallock ,  Ivan Berry ,  Ari Margolis ,  Orlando Escorcia

IPC: C25F001/00

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。

公开(公告)号：US20250140520A1

公开(公告)日：2025-05-01

申请号：US18919483

申请日：2024-10-18

Applicant: Axcelis Technologies, Inc.

Inventor： Michael Cristoforo ,  Bo Vanderberg

IPC: H01J37/304 ,  H01J37/317

Abstract: A profiling apparatus has a hollow cylinder having a circumferential slit having a circumferential slit width disposed about cylinder axis. Two or more beam current detectors are disposed within the cylinder to determine a respective beam current of an ion beam received at respective detector surfaces. An aperture plate is upstream of the cylinder and has an aperture slit running parallel to the cylinder having a slit width. A rotary input apparatus controls a rotational position of the cylinder. A linear translation apparatus controls a linear position of the cylinder and aperture plate. A controller determines a uniformity and angular profile of the ion beam in a plurality of dimensions based, at least in part, on the rotational position of the cylinder, the linear position of the cylinder and aperture plate, and the respective beam current of the ion beam received.

公开(公告)号：US20250118590A1

公开(公告)日：2025-04-10

申请号：US18910385

申请日：2024-10-09

Applicant: Axcelis Technologies, Inc.

Inventor： Michael F. Leahy

IPC: H01L21/683 ,  H01L21/67

Abstract: In some embodiments, the present disclosure relates to workpiece handling system. The workpiece handling system includes a vacuum workpiece handler having a surface configured to receive a semiconductor workpiece. The surface has edges that form a plurality of vacuum suction holes along the surface. A plurality of vacuum conduits are respectively coupled to the plurality of vacuum suction holes, and a shared vacuum plenum is coupled to the plurality of vacuum conduits. The plurality of vacuum conduits are arranged between the shared vacuum plenum and the plurality of vacuum suction holes. A restrictor is configured to independently vary communication of the plurality of vacuum conduits between the shared vacuum plenum and the plurality of vacuum suction holes. The restrictor includes a plurality of self-regulated passive restricting units.