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公开(公告)号：US10475996B2
公开(公告)日：2019-11-12
申请号：US15989188
申请日：2018-05-25
Inventor： Wei Li , Yicheng Chen , Dongyang Li , Hao Zhong , Deen Gu , Yadong Jiang
Abstract: An optical-readout synaptic device based on SiOxNy and a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNx dielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNx dielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.
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公开(公告)号：US10466797B2
公开(公告)日：2019-11-05
申请号：US15284273
申请日：2016-10-03
Inventor： Xingguang Song , Hong Cheng , Yanli Ji , Yang Zhao , Guo Ye
Abstract: Embodiments of the present invention provide a pointing interaction method, apparatus, and system. The method includes: obtaining a hand image and an arm image; determining spatial coordinates of a fingertip according to the hand image, and determining spatial coordinates of an arm key portion according to the arm image; and performing converged calculation on the spatial coordinates of the fingertip and the spatial coordinates of the arm key portion, to determine two-dimensional coordinates, on a display screen, of an intersection point between fingertip pointing and the display screen. Therefore, the pointing interaction apparatus can implement high-precision pointing only by using the spatial coordinates of the fingertip and the spatial coordinates of the arm key portion, and the pointing has good realtimeness.
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公开(公告)号：US20190317122A1
公开(公告)日：2019-10-17
申请号：US16451917
申请日：2019-06-25
Inventor： Wei ZHANG , Yanjun LI , Zhenghua GU , Yibing SHI , Fan WANG , Wenqing ZHANG , Zhipeng LI , Jian ZHOU , Zhipeng ZHAN
Abstract: The present invention provides a wind measurement apparatus based on 3D (three dimensional) non-orthogonal ultrasonic sensor array, the ultrasonic sensor array is composed of two group of ultrasonic sensors, which are centrosymmetrically located at opposite sides, and the angle formed by connecting any two ultrasonic sensors at a side to the symmetry point O is less than 90°, the arrangement of 3D non-orthogonal ultrasonic sensor array reduces the generation of turbulence, thus, the accurate wind speed and wind direction is obtained. In the mean time, the central channel is employed to obtain a reference wind speed vref. Comparing the speed component vcentral along central channel of the wind under measurement with the reference wind speed vref, if the difference is less than a present threshold, then computing module outputs the measurement results, or discards them, thus the wind measurement accuracy is further improved.
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公开(公告)号：US20190305080A1
公开(公告)日：2019-10-03
申请号：US15737523
申请日：2016-08-17
Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , CHONGQING PINGWEI ENTERPRISE CO., LTD.
Inventor： JIANGFENG DU , ZHENCHAO LI , DONG LIU , ZHIYUAN BAI , QI YU , SHUZHOU LI
IPC: H01L29/06 , H01L29/861
Abstract: A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different. The semiconductor structure in the present invention significantly optimizes the distribution of an electric field during the off-state high voltage operation of a device, greatly improves the breakdown voltage of the device, avoids the premature breakdown of the device caused by the concentration effect of the electric field at the edge of the junction.
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公开(公告)号：US10367451B2
公开(公告)日：2019-07-30
申请号：US15696533
申请日：2017-09-06
Inventor： Peng Ye , Feng Tan , Xingqi Liu , Duyu Qiu , Lianping Guo , Kuojun Yang , Qinchuan Zhang , Huiqing Pan
Abstract: The present invention provides a temperature-compensated crystal oscillator based on digital circuit, a closed-loop compensation architecture is employed to realize the high precision compensation of the crystal oscillator. The output frequency f(T) of the TCXO to be compensated is directly connected with the compensation voltage Vc(T) in real time, and the compensation voltage is fed back to the voltage control terminal of the VCXO to be compensated to compensate, so that the output frequency after compensation is equal to the target frequency signal, thus avoiding the frequency shift of output signal caused by temperature hysteresis, i.e. the discrepancy between the temperature acquired by a temperature sensor and the real temperature of the resonant wafer in the prior art.
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Patent Agency Ranking
86.发明申请公开(公告)号：US20190228517A1
公开(公告)日：2019-07-25
申请号：US16370136
申请日：2019-03-29
Inventor： Yuhua CHENG , Chun YIN , Haonan ZHANG , Xuegang HUANG , Ting XUE , Kai CHEN , Yi LI
Abstract: The present invention provides a method for separating out a defect image from a thermogram sequence based on feature extraction and multi-objective optimization, we find that different kinds of TTRs have big differences in some physical quantities, such as the energy, temperature change rate during endothermic process, temperature change rate during endothermic process, average temperature, maximum temperature. The present invention extract these features (physical quantities) and cluster the selected TTRs into L clusters based on their feature vectors, which deeply digs the physical meanings contained in each TTR, makes the clustering more rational, and improves the accuracy of defect separation. Meanwhile, the present invention creates a multi-objective function to select a RTTR for each cluster based on multi-objective optimization. The multi-objective function does not only fully consider the similarities between the RTTR and other TTRs in the same cluster, but also considers the dissimilarities between the RTTR and the TTRs in other clusters, the RTTR is more representative, which guarantees the accuracy of describing the defect outline.
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公开(公告)号：US20190228221A1
公开(公告)日：2019-07-25
申请号：US16370202
申请日：2019-03-29
Inventor： Chun YIN , Yuhua CHENG , Ting XUE , Xuegang HUANG , Haonan ZHANG , Kai CHEN , Anhua SHI
Abstract: A method for separating out a defect image from a thermogram sequence based on weighted naive Bayesian classifier and dynamic multi-objective optimization. A method extracts these features and classifies the selected TTRs into K categories based on their feature vectors through a weighted naive Bayesian classifier, which deeply digs the physical meanings contained in each TTR, makes the classification of TTRs more rational, and improves the accuracy of defect image's separation. Meanwhile, the multi-objective function does not only fully consider the similarities between the RTTR and other TTRs in the same category, but also considers the dissimilarities between the RTTR and the TTRs in other categories, thus the RTTR selected is more representative, which guarantees the accuracy of describing the defect outline. The initial TTR population approximate solution for multi-objective optimization is chosen according to the previous TTR populations, which makes the multi-objective optimization dynamic and reduces its time consumption.
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公开(公告)号：US10353417B2
公开(公告)日：2019-07-16
申请号：US16026081
申请日：2018-07-03
Applicant: University of Electronic Science and Technology of China , Institute of Electronic and Information Engineering of UESTC in Guangdong
Inventor： Xin Ming , Jiahao Zhang , Wenlin Zhang , Di Gao , Xuan Zhang , Zhuo Wang , Bo Zhang
Abstract: A ripple pre-amplification based fully integrated LDO pertains to the technical field of power management. The positive input terminal of a transconductance amplifier is connected to a reference voltage Vref, and the negative input terminal of the transconductance amplifier is connected to the feedback voltage Vfb. The output terminal of the transconductance amplifier is connected to the negative input terminal of a transimpedance amplifier and the negative input terminal of an error amplifier. The positive input terminal of the transimpedance amplifier is connected to the ground GND, and the output terminal of the transimpedance amplifier is connected to the positive input terminal of the error amplifier. The gate terminal of the power transistor MP is connected to the output terminal of the error amplifier, the source terminal of the power transistor MP is connected to an input voltage VIN, and the drain terminal of the power transistor MP is grounded.
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公开(公告)号：US10340332B2
公开(公告)日：2019-07-02
申请号：US15774286
申请日：2016-09-17
Applicant: University of Electronic Science and Technology of China , Institute of Electronic and Information Engineering of UESTC in Guangdong
Inventor： Min Ren , Yumeng Zhang , Cong Di , Jingzhi Xiong , Zehong Li , Jinping Zhang , Wei Gao , Bo Zhang
Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.
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公开(公告)号：US20190186015A1
公开(公告)日：2019-06-20
申请号：US16283809
申请日：2019-02-24
Inventor： Bowan TAO , Jie XIONG , Fei ZHANG , Chaoren LI , Xiaohui ZHAO , Yanrong LI
CPC classification number: C23C16/46 , C23C14/08 , C23C14/24 , C23C14/541 , C23C14/562 , C23C16/40 , C23C16/545 , C23C16/56
Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
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