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255 条记录 (耗时 0.011 秒)

    Gunn oscillator with p-n junction contact for fast low power on-off control
    82.
    发明授权
    Gunn oscillator with p-n junction contact for fast low power on-off control 失效
    具有P-N接点的GUNN振荡器用于快速低功率开关控制

    公开(公告)号：US3566306A

    公开(公告)日：1971-02-23

    申请号：US3566306D

    申请日：1969-06-30

    申请人： IBM

    发明人： ESPOSITO RALPH M ,  HAUGE PETER S ,  LANZA CONRAD

    IPC分类号： H01L47/00 ,  H03B9/12 ,  H03B7/00

    CPC分类号： H03B9/12 ,  H01L47/00

    摘要： THE CONTROLLABLE OSCILLATOR INCLUDES A CONVENTIONAL GUNN OSCILLATOR FORMED OF A BODY OF N TYPE GALLIUM ARSENIDE WITH ORMIC CONTACTS AT BOTH ENDS. THE NOL PRODUCT FOR THE BODY IS AT LEAST TWICE THE CRITICAL VALUE FOR SUSTAINING DOMAIN NUCLEATION AND PROPAGATION. AN ABOVE-THRESHOLD VOLTAGE IS APPLIED TO THE BODY TO PRODUCE HIGH FREQUENCY OSCILLATIONS. THE OSCILLATIONS ARE CONTROLLED BY SIGNALS APPLIED TO A P TYPE CONTACT MADE TO THE BODY AT A DISTANCE D FROM THE AMOD SUCH THAT NOD IS LESS THAN THE CRITICAL VALUE FOR OSCILLATIONS. APPLICATION OF A REVERSE BIAS SIGNAL TO THIS REGION CAUSES THE OSCILLATIONS TO STOP AND A STABLE FIELD CONDITION TO BE PRODUCED WITH A HIGH FIELD NEAR THE ANODE.

    Functional light-controlled gunn oscillator
    83.
    发明授权
    Functional light-controlled gunn oscillator 失效
    功能光控摇摆器

    公开(公告)号：US3562667A

    公开(公告)日：1971-02-09

    申请号：US3562667D

    申请日：1968-10-01

    申请人： FAIRCHILD CAMERA INSTR CO

    发明人： SOLOMON RAYMOND ,  HAYDL WILLIAM H

    IPC分类号： H01L47/02 ,  H03B9/12 ,  H03B7/06

    CPC分类号： H01L47/023 ,  H03B9/12

    摘要： A SHAPED MASK OVERLIES A SELECTED SURFACE OF A LAYER OF LIGHT-SENSITIVE SEMICONDUCTOR MATERIAL CAPABLE OF EXHIBITING NEGATIVE MOBILITY. THE LAYER IS FORMED SO THAT THE PRODUCT OF ELECTRON CONCENTRATION THEREIN TIMES THE LENGTH OF PATH BETWEEN SPACED ELECTRODES THEREON IS LESS THAN A VALUE NECESSARY FOR THE PROPORTION OF HIGH-FIELD DOMAINS. WHEN AN ELECTRIC FIELD IS CREATED WITHIN THE LAYER AND LIGHT IS APPLIED TO THE UNCOVERED PORTION OF THE SURFACE, HIGH-FIELD DOMAINS ARE PROPAGATED, AND HIGH-FREQUENCY OUTPUT SIGNALS ARE GENERATED WHOSE INSTANTANEOUS AMPLITUDE DURING THE TIME THE DOMAINS ARE PROPAGATED IS CONTROLLED BY THE GEOMETRY OF THE UNCOVERED SURFACE. IN THIS MANNER, THE GEOMETRY OF THE UNCOVERED SURFACE SUBSTANTIALLY CONTROLS THE SHAPE AND FREQUENCY OF THE WAVEFORM OF THE OUTPUT SIGNAL.

    Electric field-responsive solid state devices
    88.
    发明授权
    Electric field-responsive solid state devices 失效
    电场响应固体状态器件

    公开(公告)号：US3365583A

    公开(公告)日：1968-01-23

    申请号：US37475864

    申请日：1964-06-12

    申请人： IBM

    发明人： GUNN JOHN B

    IPC分类号： H01L47/02 ,  H03B9/12 ,  H03K3/02 ,  H03K3/80 ,  H03K19/02

    CPC分类号： H01L47/02 ,  H03B9/12 ,  H03K3/02 ,  H03K3/80 ,  H03K19/02

    摘要： 1,070,261. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 26, 1964 [June 10, 1963], No. 21796/64. Heading H1K. The invention is based on the discovery that when an electric field in excess of 2000 volts/cm. is set up in a crystal of gallium arsenide, the current flow between a pair of electrodes on the body fluctuates at microwave frequency. In general the fluctuations are random noise but if the electrodes are at the ends of a body whose length L lies between 2 x 10 -2 and 1 x 10 -4 cm. and the field is set up by applying a suitable potential difference to these electrodes, the current fluctuations are coherent oscillations with a frequency, or set of harmonic frequencies, given by f = nv/L, where / is the frequency, n is an integer and v is the carrier drift velocity. The claims are directed to a device (which need not be made of gallium arsenide) exhibiting the above effect and to the use of the effect as a method of generating microwave oscillations. In the drawings (not shown). Figs. 1 and 2 depict the electrical characteristics of the device; Fig. 3 an oscillator circuit consisting solely of the device, a source of D.C. power and a load; and Fig. 4 a jig which is used to provide a suitably dimensioned Ga As wafer with tin electrodes. In this jig the wafer is located between two tin spheres which are subsequently melted and alloyed to the wafer, the end product (Fig. 5a, not shown) being a cylinder consisting of two tin rods with a disc of gallium arsenide between them. This is subsequently shaped by grinding to a triangular cross-section, embedded in epoxy resin, the resin partly removed to expose one rectangular face of the triangular prism and attached by that face to a suitable insulating block carrying phosphor bronze contacts to the tin electrodes. The steps of this process are depicted in Figs. 5b to 5f (not shown).

    RESISTANCE CIRCUIT, OSCILLATION CIRCUIT, AND IN-VEHICLE SENSOR APPARATUS
    90.
    发明申请
    RESISTANCE CIRCUIT, OSCILLATION CIRCUIT, AND IN-VEHICLE SENSOR APPARATUS 审中-公开

    公开(公告)号：US20200013769A1

    公开(公告)日：2020-01-09

    申请号：US16495564

    申请日：2017-09-12

    申请人： HITACHI AUTOMOTIVE SYSTEMS, LTD.

    发明人： Yoshimitsu YANAGAWA ,  Yoshikazu NARA ,  Masahiro MATSUMOTO ,  Hiroshi NAKANO ,  Akira KOTABE

    IPC分类号： H01L27/01 ,  H01L49/02 ,  H03B9/12

    摘要： A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.