Method for manufacturing array substrate
    1.
    发明授权
    Method for manufacturing array substrate 有权
    阵列基板的制造方法

    公开(公告)号:US08551822B2

    公开(公告)日:2013-10-08

    申请号:US12005289

    申请日:2007-12-27

    Applicant: Chun-Hao Tung

    Inventor: Chun-Hao Tung

    CPC classification number: H01L27/1288 H01L27/1214

    Abstract: A method for manufacturing a substrate for a flat panel display device is disclosed. The present method uses photolithography with four masks to manufacture a TFT-LCD. After the third half-tone mask is used, the manufacturing of the TFTs and the defining of the pixel area of the substrate can be completed. The present method can avoid the alignment deviation and the generation of parasitic capacitance happened on the substrate made through the conventional photolithography with five masks. Therefore, the present method can reduce the costs and increase the yield. Moreover, the substrate for the TFT-LCD made by the present method can define a channel region in the semiconductor layer after the second half-tone mask. Hence, the subsequent manufacturing for forming a transparent conductive layer, a source, and a drain can be achieved by wet etching to effectively reduce the non-homogeneous etching for the channel region in the semiconductor layer.

    Abstract translation: 公开了一种用于制造平板显示装置用基板的方法。 本方法使用具有四个掩模的光刻制造TFT-LCD。 在使用第三半色调掩模之后,可以完成TFT的制造和衬底的像素区域的限定。 本方法可以避免通过具有五个掩模的常规光刻制成的衬底上发生的对准偏差和寄生电容的产生。 因此,本方法可以降低成本并提高产量。 此外,通过本方法制造的用于TFT-LCD的衬底可以在第二半色调掩模之后限定半导体层中的沟道区。 因此,用于形成透明导电层,源极和漏极的后续制造可以通过湿式蚀刻来实现,以有效地减少半导体层中的沟道区域的非均匀蚀刻。

    Array Substrate for LCD and Method of Fabrication Thereof
    3.
    发明申请
    Array Substrate for LCD and Method of Fabrication Thereof 有权
    LCD阵列基板及其制作方法

    公开(公告)号:US20100273285A1

    公开(公告)日:2010-10-28

    申请号:US12831613

    申请日:2010-07-07

    CPC classification number: H01L29/78636 H01L29/66765

    Abstract: A liquid crystal display array substrate. A trench is in a substrate. A gate, a gate dielectric layer, a semiconductor layer and a doped semiconductor layer are disposed in the trench, wherein the semiconductor layer comprises a channel. A source electrode and a drain electrode are respectively electrically connected to portions of the semiconductor layer on opposite sides of the channel.

    Abstract translation: 液晶显示阵列基板。 沟槽在衬底中。 栅极,栅介质层,半导体层和掺杂半导体层设置在沟槽中,其中半导体层包括沟道。 源电极和漏电极分别电连接到沟道的相对侧上的半导体层的部分。

    DIRECT PATTERNING METHOD FOR MANUFACTURING A METAL LAYER OF A SEMICONDUCTOR DEVICE
    4.
    发明申请
    DIRECT PATTERNING METHOD FOR MANUFACTURING A METAL LAYER OF A SEMICONDUCTOR DEVICE 审中-公开
    用于制造半导体器件的金属层的直接绘图方法

    公开(公告)号:US20100136785A1

    公开(公告)日:2010-06-03

    申请号:US12699429

    申请日:2010-02-03

    Abstract: A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor.The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.

    Abstract translation: 提供了用于制造半导体器件的金属层的直接图案化方法。 所要求保护的方法减少了诸如用于衬底的薄膜沉积方法等现有方法所需的材料和时间,以及用于制造晶体管的光刻方法。 本发明的优选实施例包括限定播种机材料的图案的步骤和选择性薄膜沉积的步骤。 用于播种机的直接图案化技术和化学浴沉积(CBD)用于提供具有非真空和选择性沉积的薄膜生长方法。 本发明的目的是用于在半导体器件内生产线或电极,或者在大面积晶体管阵列或反射层中沉积和制造薄膜。

    Method for manufacturing LCD panel comprising spacers having cavity filled with adhesive
    5.
    发明授权
    Method for manufacturing LCD panel comprising spacers having cavity filled with adhesive 有权
    用于制造LCD面板的方法,其包括具有填充有粘合剂的空腔的间隔物

    公开(公告)号:US07705958B2

    公开(公告)日:2010-04-27

    申请号:US11634867

    申请日:2006-12-07

    CPC classification number: G02F1/13394 G02F2202/28

    Abstract: A method for manufacturing a liquid crystal display device is disclosed. The method includes the steps of: forming multiple spacers having a cavity on the upper substrate or on the lower substrate; injecting adhesives or binders in the cavities of the spacers; and curing the adhesives or the binders in the cavities to bind the upper substrate and the lower substrate. Through the method illustrated above, the strength for combining these two substrates can be enhanced. Moreover, the uniformity of the gap inside the LCD panel, and the gravity mura resulted from the gravity can be improved. Therefore, the lifetime of the LCD can be extended.

    Abstract translation: 公开了一种制造液晶显示装置的方法。 该方法包括以下步骤:在上基板或下基板上形成具有空腔的多个间隔物; 在间隔物的空腔中注入粘合剂或粘合剂; 并固化在空腔中的粘合剂或粘结剂以结合上基底和下基底。 通过上述方法,能够提高组合这两个基板的强度。 此外,可以提高LCD面板之间的间隙的均匀性和重力产生的重力。 因此,LCD的寿命可以延长。

    Manufacturing method for a TFT electrode for preventing metal layer diffusion
    6.
    发明授权
    Manufacturing method for a TFT electrode for preventing metal layer diffusion 有权
    用于防止金属层扩散的TFT电极的制造方法

    公开(公告)号:US07632694B2

    公开(公告)日:2009-12-15

    申请号:US11375336

    申请日:2006-03-15

    Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

    Abstract translation: 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极,并且在制造期间防止金属离子扩散,所述透明导电电极由铟锡氧化物,氧化铟锌,Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理,形成用作阻挡层的像素电极,以防止在制造期间的金属离子扩散。

    Pixel electrode of LCD device having first, second and third metal layers and pixel electrode contact hole in which the first metal layer is exposed to, and the second metal layer although contacting the first metal layer, is not exposed to the pixel electrode
    7.
    发明授权
    Pixel electrode of LCD device having first, second and third metal layers and pixel electrode contact hole in which the first metal layer is exposed to, and the second metal layer although contacting the first metal layer, is not exposed to the pixel electrode 有权
    具有第一金属层,第二金属层和第三金属层的像素电极和第一金属层暴露于其中的像素电极接触孔,并且第二金属层虽然与第一金属层接触,但不暴露于像素电极

    公开(公告)号:US07626668B2

    公开(公告)日:2009-12-01

    申请号:US11187831

    申请日:2005-07-25

    Applicant: Wen-Yi Shyu

    Inventor: Wen-Yi Shyu

    CPC classification number: G02F1/1368 G02F1/136213 G02F2001/136236

    Abstract: A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

    Abstract translation: 公开了一种用于制造薄膜晶体管液晶显示器的像素电极接触结构的方法。 首先,提供其上具有第一绝缘层的透明基板。 之后,在衬底上依次形成第一金属层和第二金属层,然后通过半色调技术和蚀刻工艺将其图案化,其中在像素电极接触区域内去除第二金属层。 同时,形成包括第一金属层和第二金属层的薄膜晶体管的漏极线。 接下来,在衬底上形成图案化的钝化层。 最后,在衬底上形成直接连接像素电极接触结构内的第一金属层的像素电极层。 本发明提供具有低接触电阻的像素电极接触结构,并且防止从漏极线到存储电容器的电流泄漏。

    Method for manufacturing a Liquid crystal display device
    8.
    发明授权
    Method for manufacturing a Liquid crystal display device 有权
    液晶显示装置的制造方法

    公开(公告)号:US07553707B2

    公开(公告)日:2009-06-30

    申请号:US11351488

    申请日:2006-02-09

    Abstract: The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film is used to make contacts, taper patterns required for general through holes are formed simultaneously with a fine pattern formed in a light shielding area that is tapered more approximately to vertical, using a photomask with phase-shift effect. Thus the pixel electrode pattern can be separated without using lithography process in subsequent processes.

    Abstract translation: 本发明提供了一种新型技术,其中用于显示装置的TFT阵列基板由三个光掩模形成。 本发明通过结合众所周知的四掩模工艺使用新技术来实现。 对于新技术,在使用光敏丙烯酸树脂膜进行接触的光刻工艺期间,通用通孔所需的锥形图案与形成在更接近垂直的遮光区域的精细图案同时形成,使用 具有相移效应的光掩模。 因此,可以在随后的工艺中不使用光刻工艺来分离像素电极图案。

    Liquid crystal display device and manufacture method thereof
    9.
    发明申请
    Liquid crystal display device and manufacture method thereof 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号:US20080090003A1

    公开(公告)日:2008-04-17

    申请号:US11987947

    申请日:2007-12-06

    CPC classification number: G02B5/0858 G02B5/10 G02F1/133553 G02F1/133555

    Abstract: A method of manufacturing a reflecting substrate in a liquid crystal display device is disclosed, comprising the steps of: (a) providing a substrate having a first metal layer, wherein the first metal layer is formed with at least one soft metal or the alloys thereof; and (b) forming an aluminum nitride layer on the first metal layer. The method of the present invention is capable of forming a rugged, shining, reflective layer on a transflective, or a reflection type TFT LCD with simple steps and low cost.

    Abstract translation: 公开了一种在液晶显示装置中制造反射衬底的方法,包括以下步骤:(a)提供具有第一金属层的衬底,其中第一金属层由至少一种软金属或其合金形成 ; 和(b)在第一金属层上形成氮化铝层。 本发明的方法能够以简单的步骤和低成本在透反射式或反射型TFT LCD上形成坚固,发光的反射层。

    Liquid crystal display
    10.
    发明申请
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US20070285597A1

    公开(公告)日:2007-12-13

    申请号:US11785976

    申请日:2007-04-23

    CPC classification number: G02F1/1333 G02F1/133504 G02F2001/133507

    Abstract: A high brightness liquid crystal display (LCD) is provided. In the LCD, plural light-focusing areas are disposed on a first substrate or a first polarizer, near the backlight module, right below the transparent areas on a second substrate to increase brightness of the LCD. Each of the light-focusing areas comprises at least a high-refractive area having higher refractive index.

    Abstract translation: 提供高亮度液晶显示器(LCD)。 在LCD中,在第二基板上的透明区域正下方的第一基板或第一偏振片附近,在第二基板的正下方设置多个聚光区域,以增加LCD的亮度。 每个聚光区域至少包括具有较高折射率的高折射区域。

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