公开(公告)号：US10224401B2

公开(公告)日：2019-03-05

申请号：US15564498

申请日：2017-05-31

申请人： Transphorm Inc.

发明人： Umesh Mishra ,  Rakesh K. Lal ,  Geetak Gupta ,  Carl Joseph Neufeld ,  David Rhodes

IPC分类号： H01L29/00 ,  H01L23/495 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/10

摘要： A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side; a first power electrode and a second power electrode; and a gate between the first and second power electrodes, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded so the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. A region of the graded III-N layer is (i) between the gate and the second power electrode, and (ii) electrically connected to the first power electrode and electrically isolated from the second power electrode.

公开(公告)号：US10200030B2

公开(公告)日：2019-02-05

申请号：US15554170

申请日：2016-03-11

申请人： Transphorm Inc.

发明人： Zhan Wang

IPC分类号： H02P27/08 ,  H03K17/687 ,  H03K17/12 ,  H03K17/16 ,  H03K17/64 ,  H02M1/08 ,  H01L29/20 ,  H01L29/778 ,  H02M7/5395 ,  H02M1/00

摘要： A circuit includes first and second half bridges, a first inductor, a second inductor, and a main inductor. The half bridges each include a high side switch, a low side switch, and a gate driver configured to apply switching signals to the high side switch and the low side switch. The first inductor has one side electrically connected to an output node of the first half bridge between the high side switch and the low side switch. The second inductor has one side electrically connected to an output node of the second half bridge between the high side switch and the low side switch. The main inductor is coupled to a node between the other sides of the first and second inductors. The main inductor has a greater inductance than each of the first and second inductors, and the first and second inductors are inversely coupled to one another.

公开(公告)号：US10199217B2

公开(公告)日：2019-02-05

申请号：US15288120

申请日：2016-10-07

申请人： Transphorm Inc.

发明人： Rongming Chu ,  Umesh Mishra ,  Rakesh K. Lal

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778 ,  H01L29/861 ,  H01L23/29 ,  H01L23/31 ,  H01L29/423 ,  H01L23/00

摘要： Group III-nitride devices are described that include a stack of III-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a barrier layer and a spacer layer. One passivation layer directly contacts a surface of the spacer layer on a side opposite to the channel layer and is an electrical insulator. The stack of III-nitride layers and the first passivation layer form a structure with a reverse side proximate to the first passivation layer and an obverse side proximate to the barrier layer. Another passivation layer is on the obverse side of the structure. Defected nucleation and stress management layers that form a buffer layer during the formation process can be partially or entirely removed.

公开(公告)号：US09866210B2

公开(公告)日：2018-01-09

申请号：US14539098

申请日：2014-11-12

申请人： Transphorm Inc.

发明人： James Honea ,  Yifeng Wu

IPC分类号： H03K17/56 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/567 ,  H03K17/687 ,  H03K17/22

摘要： A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

公开(公告)号：US09490324B2

公开(公告)日：2016-11-08

申请号：US14744526

申请日：2015-06-19

申请人： Transphorm Inc.

发明人： Umesh Mishra ,  Srabanti Chowdhury ,  Carl Joseph Neufeld

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/205 ,  H01L29/78 ,  H01L29/778 ,  H01L29/20 ,  H01L29/04

CPC分类号： H01L29/1054 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7785 ,  H01L29/78

摘要： An N-polar III-N transistor includes a III-N buffer layer, a first III-N barrier layer, and a III-N channel layer, the III-N channel layer having a gate region and a plurality of access regions on opposite sides of the gate region. The compositional difference between the first III-N barrier layer and the III-N channel layer causes a conductive channel to be induced in the access regions of the III-N channel layer. The transistor also includes a source, a gate, a drain, and a second III-N barrier layer between the gate and the III-N channel layer. The second III-N barrier layer has an N-face proximal to the gate and a group-III face opposite the N-face, and has a larger bandgap than the III-N channel layer. The lattice constant of the first III-N barrier layer is within 0.5% of the lattice constant of the buffer layer.

公开(公告)号：US09401341B2

公开(公告)日：2016-07-26

申请号：US14336287

申请日：2014-07-21

申请人： Transphorm Inc.

发明人： Yifeng Wu

IPC分类号： H01L21/00 ,  H01L23/00 ,  H02M7/00 ,  H03K17/567 ,  H01L23/495 ,  H01L27/06 ,  H01L23/552 ,  H01L25/18 ,  H01L27/085

CPC分类号： H01L24/43 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L2224/43 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H03K17/567 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package.

摘要翻译： 电子部件包括III-N晶体管和III-N整流装置，两者都封装在单个封装中。 III-N晶体管的栅极电连接到单个封装的第一引线或单个封装的导电结构部分，III-N晶体管的漏极电连接到单个封装的第二引线 封装并连接到III-N整流装置的第一电极，并且III-N整流装置的第二电极电连接到单个封装的第三引线。

公开(公告)号：US09318593B2

公开(公告)日：2016-04-19

申请号：US14542937

申请日：2014-11-17

申请人： Transphorm Inc.

发明人： Mo Wu ,  Rakesh K. Lal ,  Ilan Ben-Yaacov ,  Umesh Mishra ,  Carl Joseph Neufeld

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/31144 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

摘要翻译： 制造III-N器件的方法包括在衬底上形成III-N沟道层，在沟道层上形成III-N势垒层，在阻挡层上形成绝缘体层，在器件的第一部分形成沟槽 。 形成沟槽包括在器件的第一部分中去除绝缘体层和阻挡层的一部分，使得器件的第一部分中的阻挡层的剩余部分具有远离沟道顶表面的厚度 层，厚度在预定厚度范围内，在包括氧气的气体环境中在升高的温度下退火III-N器件以氧化器件的第一部分中的阻挡层的剩余部分，并且去除氧化的剩余部分 在装置的第一部分中的阻挡层。

公开(公告)号：US09190295B2

公开(公告)日：2015-11-17

申请号：US14480980

申请日：2014-09-09

申请人： Transphorm Inc.

发明人： Yifeng Wu

IPC分类号： H01L21/00 ,  H01L21/48 ,  H01L23/057 ,  H01L23/36 ,  H01L25/11 ,  H01L21/77 ,  H01L27/02

CPC分类号： H01L21/4803 ,  H01L21/4814 ,  H01L21/4871 ,  H01L21/77 ,  H01L23/057 ,  H01L23/36 ,  H01L25/072 ,  H01L25/115 ,  H01L27/0248 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

摘要翻译： 电子部件包括封装在封装中的高压开关晶体管。 高电压开关晶体管包括全部在高压开关晶体管的第一侧上的源电极，栅电极和漏电极。 源电极电连接到封装的导电结构部分。 可以形成使用上述晶体管与另一晶体管的组件，其中一个晶体管的源极可以电连接到包含晶体管的封装的导电结构部分，并且第二晶体管的漏极电连接到第二导体结构部分的第二导电结构部分 一个容纳第二个晶体管的封装。 或者，第二晶体管的源极与其导电结构部分电隔离，并且第二晶体管的漏极与其导电结构部分电隔离。

公开(公告)号：US09171836B2

公开(公告)日：2015-10-27

申请号：US14478504

申请日：2014-09-05

申请人： Transphorm Inc.

发明人： Rakesh K. Lal ,  Robert Coffie ,  Yifeng Wu ,  Primit Parikh ,  Yuvaraj Dora ,  Umesh Mishra ,  Srabanti Chowdhury ,  Nicholas Fichtenbaum

IPC分类号： H03K17/687 ,  H01L27/02 ,  H01L25/00 ,  H01L21/8236 ,  H01L27/06 ,  H01L49/02 ,  H01L29/778 ,  H03K17/10 ,  H01L29/423 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L27/0288 ,  H01L21/8236 ,  H01L25/00 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7786 ,  H01L29/872 ,  H01L2924/0002 ,  H03K17/102 ,  H03K2017/6875 ,  Y10T29/49117 ,  H01L2924/00

摘要： An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.

摘要翻译： 电子部件包括耗尽型晶体管，增强型晶体管和电阻。 耗尽型晶体管具有比增强型晶体管更高的击穿电压。 电阻器的第一端子电连接到增强型晶体管的源极，并且电阻器的第二端子和耗尽型晶体管的源极电连接到增强型晶体管的漏极。 耗尽型晶体管的栅极可以电连接到增强型晶体管的源极。

公开(公告)号：US09142659B2

公开(公告)日：2015-09-22

申请号：US14211104

申请日：2014-03-14

申请人： Transphorm Inc.

发明人： Yuvaraj Dora ,  Yifeng Wu

IPC分类号： H01L29/872 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/861 ,  H01L21/768 ,  H01L21/283 ,  H01L21/285

CPC分类号： H01L29/778 ,  H01L21/283 ,  H01L21/28581 ,  H01L21/76804 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/6609 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861 ,  H01L29/872

摘要： A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.

摘要翻译： III-N半导体器件可以包括在III-N材料结构的表面上具有厚度的电极限定层。 电极限定层具有带侧壁的凹部，该侧壁包括多个台阶。 远离III-N材料结构的凹部的一部分具有第一宽度，并且靠近III-N材料结构的凹部的一部分具有第二宽度，第一宽度大于第二宽度。 电极在凹槽中，电极包括在凹槽的侧壁上的延伸部分。 电极限定层的一部分位于延伸部分和III-N材料结构之间。 侧壁相对于III-N材料结构的表面形成约40度或更小的有效角度。