公开(公告)号：US20170194457A1

公开(公告)日：2017-07-06

申请号：US15462822

申请日：2017-03-18

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C.M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L29/165 ,  H01L21/02

CPC分类号： H01L29/66477 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US09627533B2

公开(公告)日：2017-04-18

申请号：US14615067

申请日：2015-02-05

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L29/16 ,  H01L29/165 ,  H01L29/161 ,  H01L29/66

CPC分类号： H01L29/66477 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US20170194497A1

公开(公告)日：2017-07-06

申请号：US15462825

申请日：2017-03-18

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C.M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/78 ,  H01L21/311 ,  H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC分类号： H01L29/66477 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US10651286B2

公开(公告)日：2020-05-12

申请号：US16442933

申请日：2019-06-17

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US20190305109A1

公开(公告)日：2019-10-03

申请号：US16442933

申请日：2019-06-17

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C.M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/161 ,  H01L29/16 ,  H01L29/78 ,  H01L21/311 ,  H01L29/165

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US10325998B2

公开(公告)日：2019-06-18

申请号：US15462822

申请日：2017-03-18

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L29/165 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US20160233335A1

公开(公告)日：2016-08-11

申请号：US14615067

申请日：2015-02-05

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C.M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L29/165 ,  H01L29/161

CPC分类号： H01L29/66477 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

摘要翻译： 通过在形成源极/漏极区域之后用含氟烃的等离子体进行蚀刻来除去栅极堆叠上的氮化硅盖，而不会对栅极堆叠或源极/漏极区域造成不可接受的损害。 含氟烃聚合物保护层选择性地沉积在去除氮化物盖时不被蚀刻的区域上。 使用气体化学法去除氮化硅材料，导致挥发性蚀刻产物和保护层的形成的能力使离子能量能够降低到蚀刻阈值。

公开(公告)号：US10269924B2

公开(公告)日：2019-04-23

申请号：US15462825

申请日：2017-03-18

申请人： International Business Machines Corporation ,  ZEON CORPORATION

发明人： Ravi K. Dasaka ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Masahiro Nakamura ,  Richard S. Wise

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L29/161

摘要： A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

公开(公告)号：US09577068B2

公开(公告)日：2017-02-21

申请号：US15235935

申请日：2016-08-12

申请人： International Business Machines Corporation

发明人： Gregory Costrini ,  Ravikumar Ramachandran ,  Reinaldo A. Vega ,  Richard S. Wise

IPC分类号： H01L27/088 ,  H01L29/51 ,  H01L21/306 ,  H01L29/66 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/06

CPC分类号： H01L29/66545 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/517 ,  H01L29/6681

摘要： Semiconductor-oxide-containing gate dielectrics can be formed on surfaces of semiconductor fins prior to formation of a disposable gate structure. A high dielectric constant (high-k) dielectric spacer can be formed to protect each semiconductor-oxide-containing gate dielectric. Formation of the high-k dielectric spacers may be performed after formation of gate cavities by removal of disposable gate structures, or prior to formation of disposable gate structures. The high-k dielectric spacers can be used as protective layers during an anisotropic etch that vertically extends the gate cavity, and can be removed after vertical extension of the gate cavities. A subset of the semiconductor-oxide-containing gate dielectrics can be removed for formation of high-k gate dielectrics for first type devices, while another subset of the semiconductor-oxide-containing gate dielectrics can be employed as gate dielectrics for second type devices. The vertical extension of the gate cavities increases channel widths in the fin field effect transistors.

摘要翻译： 在形成一次性栅极结构之前，可以在半导体鳍片的表面上形成含半导体氧化物的栅极电介质。 可以形成高介电常数（高k）电介质间隔物以保护每个含半导体氧化物的栅极电介质。 高k电介质间隔物的形成可以在通过移除一次性栅极结构或者在形成一次性栅极结构之前形成栅极空腔之后进行。 高k电介质间隔物可以在垂直延伸栅极腔的各向异性蚀刻期间用作保护层，并且可以在栅腔的垂直延伸之后被去除。 可以去除含半导体氧化物的栅极电介质的子集，以形成用于第一类型器件的高k栅极电介质，而含半导体氧化物的栅极电介质的另一子集可用作第二类型器件的栅极电介质。 栅极腔的垂直延伸增加了鳍状场效应晶体管中的沟道宽度。

公开(公告)号：US09082625B2

公开(公告)日：2015-07-14

申请号：US14102873

申请日：2013-12-11

申请人： International Business Machines Corporation ,  STMicroelectronics, Inc.

发明人： Lawrence A. Clevenger ,  Carl J. Radens ,  Richard S. Wise ,  Yiheng Xu ,  John Zhang

IPC分类号： B44C1/22 ,  H01L21/033 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L21/0337 ,  B81C1/0046 ,  G03F7/0002 ,  H01L21/31144

摘要： Embodiments of present invention provide a method of forming device pattern. The method includes defining a device pattern to be created in a device layer; forming a sacrificial layer on top of the device layer; identifying an imprinting mold that, at a position along a height thereof, has a horizontal cross-sectional shape that represents the device pattern; pushing the imprinting mold uniformly into the sacrificial layer until at least the position of the imprinting mold reaches a level inside the sacrificial layer that is being pushed by the imprinting mold; removing the imprinting mold away from the sacrificial layer; forming a hard mask in recesses created by the imprinting mold in the sacrificial layer, the hard mask has a pattern representing the device pattern; and transferring the pattern of the hard mask into underneath the device layer.

摘要翻译： 本发明的实施例提供一种形成装置图案的方法。 该方法包括定义要在设备层中创建的设备图案; 在器件层的顶部上形成牺牲层; 识别在其高度的位置处具有表示装置图案的水平横截面形状的压印模具; 将压印模均匀地推入牺牲层，直到至少压印模具的位置达到被压印模推送的牺牲层内的水平面; 将所述压印模具远离所述牺牲层移除; 在由牺牲层中的压印模制成的凹部中形成硬掩模，硬掩模具有表示装置图案的图案; 并将硬掩模的图案转移到器件层的下方。