公开(公告)号：US20240327976A1

公开(公告)日：2024-10-03

申请号：US18742551

申请日：2024-06-13

Applicant: Kokusai Electric Corporation ,  AIR WATER INC.

Inventor： Kimihiko NAKATANI ,  Yoshitomo HASHIMOTO ,  Yoshiro HIROSE ,  Fumio KAWASAKI ,  Yasunori OTSUKA ,  Keisuke NAGATA

IPC: C23C16/40 ,  B01J31/02 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/401 ,  B01J31/0237 ,  C23C16/0272 ,  C23C16/45557

Abstract: There is provided a technique that includes: providing a substrate including a conductive film and an insulating film on a surface of the substrate; and forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere.

公开(公告)号：US20220139708A1

公开(公告)日：2022-05-05

申请号：US17580299

申请日：2022-01-20

Applicant: Air Water Inc.

Inventor： Hidehiko OKU ,  Ichiro HIDE

IPC: H01L21/02 ,  C23C16/32 ,  C30B25/18 ,  C30B29/36 ,  C30B29/40 ,  H01L21/306 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

Abstract: A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

公开(公告)号：US11119402B2

公开(公告)日：2021-09-14

申请号：US16329020

申请日：2017-08-25

Applicant: AIR WATER INC.

Inventor： Hidehiko Oku ,  Ichiro Hide

IPC: G03F1/64 ,  G03F1/62

Abstract: A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

公开(公告)号：US20200020778A1

公开(公告)日：2020-01-16

申请号：US16497714

申请日：2018-03-07

Applicant: AIR WATER INC.

Inventor： Mitsuhisa Narukawa ,  Sumito OUCHI ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC: H01L29/267 ,  H01L21/02

Abstract: A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

公开(公告)号：US10354864B2

公开(公告)日：2019-07-16

申请号：US15761841

申请日：2016-10-17

Applicant: AIR WATER INC.

Inventor： Mitsuhisa Narukawa ,  Akira Fukazawa ,  Hiroki Suzuki ,  Keisuke Kawamura

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L21/02 ,  C23C16/34 ,  H01L29/778 ,  H01L29/812 ,  H01L33/32 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A compound semiconductor substrate having a desired quality is provided.A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

公开(公告)号：US10186585B2

公开(公告)日：2019-01-22

申请号：US15521697

申请日：2015-08-12

Applicant: AIR WATER INC.

Inventor： Akira Fukazawa ,  Sumito Ouchi

IPC: H01L29/872 ,  H01L21/205 ,  H01L29/267 ,  H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/207

Abstract: A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrate 1. The magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.

公开(公告)号：US20180053647A1

公开(公告)日：2018-02-22

申请号：US15556531

申请日：2016-01-14

Applicant: AIR WATER INC.

Inventor： Akira FUKAZAWA ,  Mitsuhisa NARUKAWA ,  Keisuke KAWAMURA

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/778

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/267 ,  H01L29/452 ,  H01L29/475 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/812

Abstract: A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

公开(公告)号：US20180030242A1

公开(公告)日：2018-02-01

申请号：US15550289

申请日：2016-01-28

Applicant: AIR WATER INC.

Inventor： Yousuke EBIHARA ,  Osamu KOYAMA

IPC: C08K5/3445 ,  H05K1/02 ,  H05K1/03 ,  C07D487/04 ,  C08J5/24

CPC classification number: C08K5/3445 ,  C07D487/04 ,  C08G59/26 ,  C08G59/32 ,  C08J5/18 ,  C08J5/24 ,  C08J2300/24 ,  C08J2363/00 ,  H01B1/20 ,  H01L23/14 ,  H01L23/293 ,  H01L23/295 ,  H05K1/0271 ,  H05K1/0346 ,  H05K1/0373 ,  H05K1/095 ,  H05K2201/068 ,  C08L63/00

Abstract: A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.

公开(公告)号：US20170044091A1

公开(公告)日：2017-02-16

申请号：US15306646

申请日：2014-04-30

Applicant: AIR WATER INC.

Inventor： Takashi FUJIMOTO ,  Keiichi YOKOTA ,  Takahiro IDE

IPC: C07C213/08 ,  C07C217/58 ,  C07C213/10

CPC classification number: C07C213/08 ,  C07C213/10 ,  C07C217/58

Abstract: There is provided a method for producing, at a high yield, a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) in which the purity of CMBA-HCl is high. This method comprises a chlorination step involving a chlorination reaction that generates CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. There is also provided a CMBA-HCl-containing composition which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.

Abstract translation: 提供了以高产率制备含有CMBA-HCl的纯度高的3-氯-4-甲氧基苄胺盐酸盐（CMBA-HCl）的组合物的方法。 该方法包括使用过氧化氢和盐酸从4-甲氧基苄胺盐酸盐产生CMBA-HCl的氯化反应的氯化步骤。 还提供了通过上述制备方法生产的含CMBA-HCl的组合物，其中CMBA-HCl的纯度高。

公开(公告)号：US20140316103A1

公开(公告)日：2014-10-23

申请号：US14360832

申请日：2012-11-22

Applicant: AIR WATER INC.

Inventor： Kou Takahashi

IPC: H05K1/03 ,  C08G59/40

CPC classification number: H05K1/0353 ,  C08G59/4085 ,  H05K1/024 ,  H05K1/0326 ,  H05K2201/0162

Abstract: An insulating material obtained by using an epoxy resin composition comprising, as an epoxy resin curing agent, a polycondensation-type aryloxysilane compound contained in an amount of 50 to 100 wt %, having a hydroxyl group equivalent in a range of 1,000 to 8,000 g/eq, and an epoxy resin having an epoxy equivalent of 200 to 500, wherein a thermally cured product obtained by curing this epoxy resin composition at a temperature of 180° C. or lower, shows a dielectric constant and a dielectric loss tangent of 3.00 or smaller and 0.015 or smaller, respectively, at 1 GHz under normal temperature. The insulating material using the epoxy resin composition can exhibit both excellent dielectric properties and practical characteristics, and is suitable for an interlayer insulating material of a multilayer printed circuit board.

Abstract translation: 通过使用环氧树脂组合物获得的绝缘材料，所述环氧树脂组合物包含作为环氧树脂固化剂的缩合型芳氧基硅烷化合物，所述缩聚型芳氧基硅烷化合物的含量为50〜100重量％，羟基当量为1,000〜8,000g / eq和环氧当量为200〜500的环氧树脂，其中通过在180℃或更低的温度下使该环氧树脂组合物固化获得的热固化产物显示介电常数和介电损耗角正切为3.00或 分别在常温下在1GHz下较小和0.015或更小。 使用环氧树脂组合物的绝缘材料可以表现出优异的介电性能和实用性能，并且适用于多层印刷电路板的层间绝缘材料。