Radiation hardened thin-film transistors

    公开(公告)号:US12027630B2

    公开(公告)日:2024-07-02

    申请号:US18195982

    申请日:2023-05-11

    申请人: Auburn University

    摘要: A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

    MICROBIAL ESTER PRODUCTION
    6.
    发明公开

    公开(公告)号:US20230340400A1

    公开(公告)日:2023-10-26

    申请号:US17787330

    申请日:2021-01-21

    申请人: AUBURN UNIVERSITY

    摘要: Microorganisms and microbial production methods for the biosynthesis of ester compounds are provided. Useful examples employ microorganisms that have been genetically modified to express alcohol acyltransferases, either from other species or that have been modified to increase their activity in catalyzing the esterification of alcohols. Additional useful examples employ microorganisms that have been genetically modified to express lipases, either from other species or that have been modified to increase their activity in catalyzing the esterification of organic acids. Additional modifications are presented that significantly increase ester production.