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公开(公告)号：US5226055A
公开(公告)日：1993-07-06
申请号：US767762
申请日：1991-09-30
CPC分类号： H01S5/18361 , H01S5/305 , H01S5/3054
摘要： It has been found that in the preparation of devices having repetitive layers, such as distributed Bragg reflectors, the dopant introduced during processing redistributes itself in a deleterious manner. In particular, this dopant through various effects segregates and diffuses from one layer into the interface region of the second layer. As a result, properties such as electrical resistance of the structure become unacceptably high. By utilizing various expedients such as carbon doping this segregation and its associated deleterious effects are avoided.
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公开(公告)号：US5115441A
公开(公告)日：1992-05-19
申请号：US637245
申请日：1991-01-03
申请人： Rose F. Kopf , Henry M. O'Bryan, Jr. , Erdmann F. Schubert , Li-Wei Tu , Yeong-Her Wang , George J. Zydzik
发明人： Rose F. Kopf , Henry M. O'Bryan, Jr. , Erdmann F. Schubert , Li-Wei Tu , Yeong-Her Wang , George J. Zydzik
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2301/18 , H01S5/0425 , H01S5/06216 , H01S5/2063 , H01S5/3432
摘要： Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 .mu.m optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8 mA. The differential series resistance is (350-450) .OMEGA. with a diode voltage of (5.1-5.6) V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7.degree..
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3.发明授权
公开(公告)号：US5068868A
公开(公告)日：1991-11-26
申请号：US526204
申请日：1990-05-21
申请人： Dennis G. Deppe , Leonard C. Feldman , Rose F. Kopf , Erdmann F. Schubert , Li Wei Tu , George J. Zydzik
发明人： Dennis G. Deppe , Leonard C. Feldman , Rose F. Kopf , Erdmann F. Schubert , Li Wei Tu , George J. Zydzik
CPC分类号： H01S5/18361 , H01S5/18375 , H01S5/18377 , H01S5/18394
摘要： This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the oder of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.
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4.发明授权P-N junction devices with group IV element-doped group III-V compound semiconductors 失效具有IV族元素掺杂III-V族化合物半导体的P-N结器件
公开(公告)号：US5268582A
公开(公告)日：1993-12-07
申请号：US934840
申请日：1992-06-24
申请人： Rose F. Kopf , Erdmann F. Schubert
发明人： Rose F. Kopf , Erdmann F. Schubert
IPC分类号： C30B29/68 , H01L21/20 , H01L21/203 , H01L21/338 , H01L29/15 , H01L29/207 , H01L29/778 , H01L29/80 , H01L29/812 , H01L29/861 , H01L31/10 , H01L29/161 , H01L29/205
CPC分类号： H01L29/861 , H01L29/155 , H01L29/207
摘要： This invention embodies p-n junction devices comprising Group III-V compound semiconductors in which the p or n or both p and n regions are formed by a superlattice selectively doped with an amphoteric Group IV element dopant selected from carbon, germanium and silicone. The superlattice includes a plurality of periods, each including two layers. Depending on the conductivity type, only one of the layers in the periods forming the superlattice region of said type of conductivity is selectively doped with said dopant, leaving the other layer in these periods undoped. The superlattice is formed by Molecular Beam Epitaxy technique, and the dopant is incorporated into respective layers by delta-doping as in a sheet centrally deposited between monolayers forming the respective layers of the period. Each period includes 5 to 15 monolayers deposited in the two layers in a numerical ratio corresponding to a cation compositional ratio in the compound semiconductor. Low growth temperatures, e.g. ranging from 410.degree. to 450.degree. C. lead to mirror-like surfaces. For a compound semiconductor Ga.sub.0.47 In.sub.0.53 As, the GaAs/InAs ordered superlattices with eight monolayers per period are grown in a ratio of 0.47/0.53. At free carrier concentrations of 10.sup.16 cm.sup. -3, carrier mobilities of 200 and 2300 cm.sup.2 /Vs for p-type and n-type are obtained with carbon as the amphoteric dopant.
摘要翻译： 本发明体现了包含III-V族化合物半导体的p-n结器件，其中通过选择性掺杂有选自碳，锗和硅树脂的两性IV族元素掺杂剂的超晶格形成p或n或者p和n区。 超晶格包括多个周期，每个周期包括两个层。 根据导电类型，形成所述导电类型的超晶格区域的周期中只有一个层选择性地掺杂有所述掺杂剂，在这些时间段内不再掺杂另一层。 超晶格是通过分子束外延技术形成的，并且掺杂剂通过δ-掺杂结合到相应的层中，如在中间沉积在形成该周期的各个层的单层之间的薄片中。 每个周期包括以对应于化合物半导体中的阳离子组成比的数值比在两层中沉积的5至15个单层。 低生长温度，例如 范围从410°至450°C，导致镜面状。 对于化合物半导体Ga 0.47 In 0.53As，以每个周期8个单层的GaAs / InAs有序超晶格以0.47 / 0.53的比例生长。 在1016cm -3的自由载流子浓度下，以碳为两性掺杂剂获得p型和n型的载流子迁移率为200和2300cm2 / Vs。
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公开(公告)号：US5024967A
公开(公告)日：1991-06-18
申请号：US374336
申请日：1989-06-30
申请人： Rose F. Kopf , J. M. Kuo , Henry S. Luftman , Erdmann F. Schubert
发明人： Rose F. Kopf , J. M. Kuo , Henry S. Luftman , Erdmann F. Schubert
IPC分类号： H01L29/73 , H01L21/203 , H01L21/208 , H01L21/22 , H01L21/331 , H01L21/338 , H01L21/38 , H01L29/205 , H01L29/737 , H01L29/812 , H01L33/00 , H01S5/00 , H01S5/026
CPC分类号： H01L21/22 , H01L21/38 , Y10S148/041 , Y10S148/048 , Y10S148/071 , Y10S148/094 , Y10S438/925
摘要： A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.
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公开(公告)号：US5362977A
公开(公告)日：1994-11-08
申请号：US997415
申请日：1992-12-28
IPC分类号： H01L33/06 , H01L29/161 , H01L29/205 , H01L29/225 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/465
摘要： This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.
摘要翻译： 本发明体现了具有增强强度的单镜面发光二极管（LED）。 LED是具有单个金属镜的III-V族和/或II-IV族化合物半导体结构。 通过在由附近的金属镜产生的装置的光学节点的反节点处放置具有二至十个，优选四至八个量子阱的LED的有源区域来获得增强的强度。 这种多量子阱LED结构表现出提高的效率接近完美的各向同性发射器的效率。
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公开(公告)号：US5206871A
公开(公告)日：1993-04-27
申请号：US815311
申请日：1991-12-27
CPC分类号： H01S5/18361
摘要： This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF.sub.2,MgF.sub.2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF.sub.2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF.sub.2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.
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公开(公告)号：US4780748A
公开(公告)日：1988-10-25
申请号：US871249
申请日：1986-06-06
IPC分类号： H01L29/43 , H01L21/203 , H01L21/28 , H01L21/338 , H01L29/08 , H01L29/45 , H01L29/778 , H01L29/812 , H01L27/12 , H01L23/48 , H01L29/80
CPC分类号： H01L29/452 , H01L21/02395 , H01L21/0245 , H01L21/02463 , H01L21/02499 , H01L21/02507 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L29/0891
摘要： A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers are grown over the surface of the upper undoped layer interleaved with layers of GaAs having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel is etched through the plurality of delta-doped monolayers to permit a gate electrode to contact the upper undoped GaAs layer. Source and drain electrodes are deposited over the delta-doped monolayers on each side of the channel.
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公开(公告)号：US5249195A
公开(公告)日：1993-09-28
申请号：US906910
申请日：1992-06-30
申请人： Leonard C. Feldman , Neil E. J. Hunt , Dale C. Jacobson , John M. Poate , Erdmann F. Schubert , Arjen M. Vredenberg , Yiu-Huen Wong , George J. Zydzik
发明人： Leonard C. Feldman , Neil E. J. Hunt , Dale C. Jacobson , John M. Poate , Erdmann F. Schubert , Arjen M. Vredenberg , Yiu-Huen Wong , George J. Zydzik
CPC分类号： H01S3/0627 , H01S3/0604 , H01S3/1608 , H01S3/1628 , H01S3/176 , H01S3/177
摘要： This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2. Photoluminescence at room temperature reveals a drastic enhancement of the luminescence intensity of the cavity emitted along the optical axis of the cavity versus the luminescence without the top mirror. The luminescence intensity of the cavity is typically 1-2 orders of magnitudes higher as compared to structures without a cavity. Furthermore, since the emission wavelength and the intensity decrease for off-normal emission angles, the change in emission wavelength can be quantitatively described by assuming that the on-axis component of the optical wave is resonant with the cavity.
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公开(公告)号：US4980892A
公开(公告)日：1990-12-25
申请号：US358972
申请日：1989-05-30
CPC分类号： B82Y20/00 , H01S5/06255 , H01S5/34 , H01S5/3086 , H01S5/309 , H01S5/3408
摘要： Optical systems which include a particular type of wavelength-tunable semiconductor laser are disclosed. Significantly, the active layer of the laser includes a doping superlattice layer. Even more significantly, wavelength-tunability is achieved by nonuniformly, optically and/or electrically pumping the laser.
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