摘要:
The excitation overcurrent detection unit for the doubly-fed electric machine is provided with a function to determine an excitation current magnitude relationship among three phases. The firing pulse is held to on-state or off-state to cause the largest-current phase and the second-largest-current phase to charge the DC capacitor by the operation of diodes. The conduction ratio of the third-largest-current phase or minimum current phase is controlled according to the detected current value to protect against a possible short-circuit across the DC capacitor. When the voltage of the DC capacitor exceeds a preset value, the voltage is suppressed by operating active or passive power devices.
摘要:
A substrate is formed of AlxGa1-xN, wherein 0≦x≦1. The substrate is a single crystal and is used producing a Group III nitride semiconductor device. A method for producing a substrate of AlxGa1-xN, wherein 0
摘要翻译:衬底由Al x Ga 1-x N形成,其中0 <= x <= 1。 衬底是单晶,并且用于生产III族氮化物半导体器件。 制造其中0
摘要:
Input-output devices are prevented from conducting false output due to faulty operation by providing an input-output control apparatus configured to store input-output values to be used by a processor to conduct arithmetic operation in a mode having a relatively high safety requirement, in a first storage area, store input-output values to be used by the processor to conduct arithmetic operation in a mode having a relatively low safety requirement, in a second storage area, and restrict copying to the first storage area, copying from the first storage area, copying to the second storage area, or copying from the second storage area according to the mode concerning the safety requirement.
摘要:
In a synchronization system adopted in a synchronous-multisystem control apparatus including a plurality of systems operating synchronously with each other at a fixed control period, the synchronous-multisystem control apparatus can be operated in a single-system mode in the event of failures occurring simultaneously in some of the systems. The synchronous-multisystem control apparatus employs a plurality of control circuits each provided for one of the systems. Any particular one of the control circuits includes: a period-signal generating circuit for generating a period signal indicating a start point of a control period; a synchronization-reference selecting circuit for outputting a synchronization-reference signal by referring to period signals generated by the systems; and a control-period correcting circuit for correcting a control period of the particular system by forming a judgment on a synchronization shift of the period signal generated by the particular system from the synchronization-reference signal and keeping the control period as it is in case the synchronization-reference signal is not generated.
摘要:
A semiconductor power conversion system comprising a multiphase bridge circuit which includes semiconductor devices having a controllable firing function and a reverse blocking characteristic, a gate control circuit which gives firing commands to the semiconductor devices, a short circuiting switch in which switching devices having a controllable firing function and a reverse blocking characteristic are connected in parallel with a DC output side of the multiphase bridge circuit, and a protection control device for performing a control for protecting the multiphase bridge circuit. The protection control device includes a device for detecting a commutation failure of the multiphase bridge circuit, and a device in response to the detection of the commutation failure for producing a blocking command for blocking the firing of the semiconductor devices of the multiphase bridge circuit and producing a short-circuiting command for firing the switching device which is short-circuited which bypasses current of the commutation failure. The protection control device further includes a device for detecting ending of a short-circuit based on the ceasing of current conduction of the short circuiting switch and for halting the blocking of the firing of the semiconductor devices of the multiphase bridge circuit.
摘要:
In a pumping-up generator/motor system comprising an induction generator/motor, at least one cyclo-converter connected to the secondary winding of the induction generator motor for controlling the rotational speed of the generator/motor in the motor mode and for maintaining the output frequency thereof in the generator mode at a constant level, the center of the speed range of the generator/motor in the generator mode is set near the synchronous speed thereof and a plurality of converter units constituting each cyclo-converter are connected in parallel in the generator mode, and in series in the motor mode thereby allowing the capacity of the cyclo-converter to be made smaller.
摘要:
The present invention provides a duplexed operation processor control system that includes operation processors, an I/O device, and at least one communication path that couples the operation processors to the I/O device, and at least one communication path that couples the operation processors with each other. The duplexed operation processor control system switches over either of the operation processors to be a primary operation processor that executes a control operation for a control target, and the other to be a secondary operation processor that is in a stand-by state, and the secondary operation processor snoops control data synchronously when the primary operation processor acquires the control data from the control target.
摘要:
There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).
摘要翻译:提供一种III族氮化物半导体外延基板,其具有抑制的垂直方向上的穿透位错水平和优异的晶体质量,该III族氮化物半导体外延基板包括用于生长外延膜的基板(1) 以及形成在基板(1)的顶部或形成在基板顶部上的III族氮化物层(2)的顶部上的Al x Ga 1-x N(0 @ x @ 1)的组成的ELO层(4) 1),其中所述ELO层(4)是通过使用由碳构成的掩模图案(3)形成的层,并且形成在所述基板(1)的顶部上或者形成在所述III族氮化物层( 2)。
摘要:
An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, i.e., an AlxGa1-xN (0≦x≦1) epitaxial substrate succeeding in reducing the generation of cracking or dislocation, and enhancing the crystal quality. More specifically, an object of the present invention is to provide an AlxGa1-xN (0
摘要翻译:本发明的一个目的是提供一种III族氮化物半导体外延衬底,即Al x Ga 1-x N(0&amp; N e; x&nlE; 1)外延衬底,其后继续减少裂纹或位错的产生,并提高晶体质量。 更具体地,本发明的目的是提供一种用于紫外线或深紫外线区域中的发光器件的Al x Ga 1-x N(0
摘要:
The system has, provided in a sending device, a generator generating transmission data including data, a data error detection code generated from the data and a safety flag indicating a degree of reliability, and transmission data; has, provided in a receiving device, a plurality of components of extracting transmission data, a safety flag, and a data error detection code from a received frame, and detecting a data error, a comparator comparing the matching of a plurality of received frames, and a selector selecting one received frame, from the frame error detection result, the safety flag, the data error detection result, and the matching comparison result; and determines the validity of transmitted data by the detection corresponding to the degree of reliability set with the safety flag.