Doubly-fed generator and doubly-fed electric machine
    1.
    发明授权
    Doubly-fed generator and doubly-fed electric machine 有权
    双馈发电机和双馈电机

    公开(公告)号:US08896261B2

    公开(公告)日:2014-11-25

    申请号:US13421259

    申请日:2012-03-15

    IPC分类号: H02P9/00 H02J3/00 H02P27/08

    摘要: The excitation overcurrent detection unit for the doubly-fed electric machine is provided with a function to determine an excitation current magnitude relationship among three phases. The firing pulse is held to on-state or off-state to cause the largest-current phase and the second-largest-current phase to charge the DC capacitor by the operation of diodes. The conduction ratio of the third-largest-current phase or minimum current phase is controlled according to the detected current value to protect against a possible short-circuit across the DC capacitor. When the voltage of the DC capacitor exceeds a preset value, the voltage is suppressed by operating active or passive power devices.

    摘要翻译: 用于双馈电机的励磁过电流检测单元具有确定三相之间的励磁电流大小关系的功能。 点火脉冲保持在导通状态或截止状态,以通过二极管的操作使最大电流相位和第二大电流相位对直流电容器充电。 根据检测到的电流值控制第三大电流相位或最小电流相位的导通比,以防止跨越直流电容器的可能的短路。 当直流电容器的电压超过预设值时,通过操作有源或无源功率器件来抑制电压。

    Synchronization system and synchronization method of multisystem control apparatus
    4.
    发明授权
    Synchronization system and synchronization method of multisystem control apparatus 失效
    多系统控制装置的同步系统和同步方法

    公开(公告)号:US06389041B1

    公开(公告)日:2002-05-14

    申请号:US09205343

    申请日:1998-12-04

    IPC分类号: G06F1516

    摘要: In a synchronization system adopted in a synchronous-multisystem control apparatus including a plurality of systems operating synchronously with each other at a fixed control period, the synchronous-multisystem control apparatus can be operated in a single-system mode in the event of failures occurring simultaneously in some of the systems. The synchronous-multisystem control apparatus employs a plurality of control circuits each provided for one of the systems. Any particular one of the control circuits includes: a period-signal generating circuit for generating a period signal indicating a start point of a control period; a synchronization-reference selecting circuit for outputting a synchronization-reference signal by referring to period signals generated by the systems; and a control-period correcting circuit for correcting a control period of the particular system by forming a judgment on a synchronization shift of the period signal generated by the particular system from the synchronization-reference signal and keeping the control period as it is in case the synchronization-reference signal is not generated.

    摘要翻译: 在同步多系统控制装置中采用的同步系统控制装置中,包括在固定的控制周期中彼此​​同步操作的多个系统,同步多系统控制装置可以在同时发生故障的情况下以单一系统模式操作 在一些系统中。 同步多系统控制装置采用多个控制电路,每个控制电路为系统之一提供。 任何一个控制电路包括:周期信号发生电路,用于产生指示控制周期的起始点的周期信号; 同步参考选择电路,用于通过参考系统产生的周期信号来输出同步参考信号; 以及控制周期校正电路,用于通过根据同步参考信号形成对由特定系统产生的周期信号的同步偏移的判断来校正特定系统的控制周期,并且保持控制周期为原样, 不产生同步参考信号。

    Fault protection for a multiphase bridge power converter
    5.
    发明授权
    Fault protection for a multiphase bridge power converter 失效
    多相桥式电源转换器的故障保护

    公开(公告)号:US5265002A

    公开(公告)日:1993-11-23

    申请号:US757334

    申请日:1991-09-10

    CPC分类号: H02H7/125

    摘要: A semiconductor power conversion system comprising a multiphase bridge circuit which includes semiconductor devices having a controllable firing function and a reverse blocking characteristic, a gate control circuit which gives firing commands to the semiconductor devices, a short circuiting switch in which switching devices having a controllable firing function and a reverse blocking characteristic are connected in parallel with a DC output side of the multiphase bridge circuit, and a protection control device for performing a control for protecting the multiphase bridge circuit. The protection control device includes a device for detecting a commutation failure of the multiphase bridge circuit, and a device in response to the detection of the commutation failure for producing a blocking command for blocking the firing of the semiconductor devices of the multiphase bridge circuit and producing a short-circuiting command for firing the switching device which is short-circuited which bypasses current of the commutation failure. The protection control device further includes a device for detecting ending of a short-circuit based on the ceasing of current conduction of the short circuiting switch and for halting the blocking of the firing of the semiconductor devices of the multiphase bridge circuit.

    摘要翻译: 一种半导体功率转换系统,包括多相桥式电路,其包括具有可控的点火功能和反向阻断特性的半导体器件,向半导体器件发出触发命令的栅极控制电路,其中具有可控射击的开关器件的短路开关 功能和反向阻断特性与多相桥式电路的直流输出侧并联连接,以及保护控制装置,用于进行保护多相桥式电路的控制。 保护控制装置包括用于检测多相桥式电路的换向故障的装置,以及响应于检测到换向失败的装置,用于产生用于阻断多相桥式电路的半导体装置的点火的阻塞命令并产生 用于点燃短路的开关器件的短路命令,其绕过换向故障的电流。 保护控制装置还包括用于基于短路开关的电流导通的停止以及用于停止多相桥式电路的半导体装置的点火来检测短路结束的装置。

    Group III nitride semiconductor epitaxial substrate and method for manufacturing the same
    8.
    发明授权
    Group III nitride semiconductor epitaxial substrate and method for manufacturing the same 失效
    III族氮化物半导体外延基板及其制造方法

    公开(公告)号:US08541292B2

    公开(公告)日:2013-09-24

    申请号:US12866147

    申请日:2009-01-28

    IPC分类号: H01L21/20

    摘要: There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).

    摘要翻译: 提供一种III族氮化物半导体外延基板,其具有抑制的垂直方向上的穿透位错水平和优异的晶体质量,该III族氮化物半导体外延基板包括用于生长外延膜的基板(1) 以及形成在基板(1)的顶部或形成在基板顶部上的III族氮化物层(2)的顶部上的Al x Ga 1-x N(0 @ x @ 1)的组成的ELO层(4) 1),其中所述ELO层(4)是通过使用由碳构成的掩模图案(3)形成的层,并且形成在所述基板(1)的顶部上或者形成在所述III族氮化物层( 2)。

    GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE
    9.
    发明申请
    GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE 审中-公开
    第III组氮化物半导体外延衬底

    公开(公告)号:US20110254048A1

    公开(公告)日:2011-10-20

    申请号:US12671660

    申请日:2008-08-06

    IPC分类号: H01L29/20 H01L33/30

    摘要: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, i.e., an AlxGa1-xN (0≦x≦1) epitaxial substrate succeeding in reducing the generation of cracking or dislocation, and enhancing the crystal quality. More specifically, an object of the present invention is to provide an AlxGa1-xN (0

    摘要翻译: 本发明的一个目的是提供一种III族氮化物半导体外延衬底,即Al x Ga 1-x N(0& N e; x≦̸ 1)外延衬底,其后继续减少裂纹或位错的产生,并提高晶体质量。 更具体地,本发明的目的是提供一种用于紫外线或深紫外线区域中的发光器件的Al x Ga 1-x N(0