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    TRANSIMPEDANCE AMPLIFIER HAVING T-NETWORK FEEDBACK ARCHITECTURE AND METHOD THEREOF
    1.
    发明公开
    TRANSIMPEDANCE AMPLIFIER HAVING T-NETWORK FEEDBACK ARCHITECTURE AND METHOD THEREOF 审中-公开

    公开(公告)号：US20230283244A1

    公开(公告)日：2023-09-07

    申请号：US17683825

    申请日：2022-03-01

    Applicant: BAE Systems Information and Electronics Systems Integration Inc.

    Inventor： Gregory S. Notaro ,  James M. Bock

    IPC: H03F1/42 ,  H03F3/45

    CPC classification number: H03F1/42 ,  H03F3/45475 ,  H03F2200/36 ,  H03F2203/45526

    Abstract: A transimpedance amplifier system (TIA) for stabilizing high gain and high frequency signals while minimizing parasitic capacitance effects on the transimpedance amplifier system. The TIA includes an operational amplifier having a first input terminal, a second input terminal, and an output terminal. The TIA also includes a signal generating device operatively connected with the first input terminal of the operational amplifier. The TIA also includes a T-network feedback architecture operatively connected with the operational amplifier at the first input terminal of the operational amplifier and the output terminal of the operational amplifier. The T-network feedback architecture has a first impedance network and a second impedance network. The T-network feedback architecture is configured to suppress parasitic capacitance from the transimpedance amplifier system.

    DYNAMIC RELAY ASSIGNMENT FOR JAMMING MITIGATION IN WIRELESS NETWORKS
    2.
    发明申请
    DYNAMIC RELAY ASSIGNMENT FOR JAMMING MITIGATION IN WIRELESS NETWORKS 审中-公开

    公开(公告)号：US20180309523A1

    公开(公告)日：2018-10-25

    申请号：US15496552

    申请日：2017-04-25

    Applicant: BAE SYSTEMS Information and Electronics Systems Integration Inc.

    Inventor： John H Chongoushian

    IPC: H04B15/00 ,  H04B7/14 ,  H04W24/10

    CPC classification number: H04B15/00 ,  H04B7/14 ,  H04B7/2606 ,  H04W24/10

    Abstract: A method for mitigating the effect of a localized jamming attack on a secure, tactical wireless network implements a dynamic relay assignment (“DRA”) approach, whereby nodes are dynamically assigned to relay communications to “disadvantaged” nodes that are subject to the attack, the relay nodes being selected based on their communication reliability and their proximity to the disadvantaged nodes. In embodiments, the nodes share with each other performance statistics and, in embodiments, measured local noise levels. In various embodiments, each node provides data to a “strategy optimizer” which then dynamically makes relay assignments. In Link-16 embodiments support for a “DRA” relay mode is added, and the communication protocol is extended to support the required exchange of communication quality and local noise information via PPLI messages.

    Integrated resistor having aligned body and contact and method for forming the same
    4.
    发明申请
    Integrated resistor having aligned body and contact and method for forming the same 有权
    具有对准体和接触的集成电阻器及其形成方法

    公开(公告)号：US20010030885A1

    公开(公告)日：2001-10-18

    申请号：US09760178

    申请日：2001-01-12

    Applicant: BAE SYSTEMS Information and Electronics Systems Integration, Inc.

    Inventor： Jonathan Maimon ,  Murty S. Polavarapu

    IPC: G11C011/00

    CPC classification number: G11C11/412

    Abstract: An integrated resistor includes a resistor body region and a resistor contact region that is aligned with the body region. Because the resistor includes an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value. A method for forming such a resistor is also disclosed.

    Abstract translation: 集成电阻器包括电阻体区域和与身体区域对准的电阻器接触区域。 因为电阻器包括对准的主体和接触，所以它通常占据比具有类似电阻值的现有集成电阻器更小的面积。 还公开了形成这种电阻器的方法。

    ANOMALY DETECTION SYSTEM USING MULTI-LAYER SUPPORT VECTOR MACHINES AND METHOD THEREOF
    5.
    发明申请
    ANOMALY DETECTION SYSTEM USING MULTI-LAYER SUPPORT VECTOR MACHINES AND METHOD THEREOF 有权

    公开(公告)号：US20210342652A1

    公开(公告)日：2021-11-04

    申请号：US16862867

    申请日：2020-04-30

    Applicant: BAE Systems Information and Electronics Systems Integration Inc.

    Inventor： Martin S. Glassman

    IPC: G06K9/62 ,  G06N20/10 ,  G06N20/20

    Abstract: A classifier network has at least two distinct sets of refined data, wherein the first two sets of refined data are sets of numbers representing the features values data received from sensors or a manufactured part. Performing, via at least two distinct types of support vector machines using an associated feature selection process for each classifier independently in a first layer, anomaly detection on the manufactured part. Then, using the stored data including refined data of at least two different types of data transforms and performing, via at least a two distinct types of support vector machines in a second layer, an associated feature selection process for each classifier independently. Forming at least four distinct compound classifier types for anomaly detection on the part using the stored data or coefficients. The ensemble of second layer support vector machine outputs compare the results to determine the presence of an anomaly.

    ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE
    7.
    发明申请
    ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE 审中-公开
    不相称的大功率和高增益超短门控制器

    公开(公告)号：US20130230951A1

    公开(公告)日：2013-09-05

    申请号：US13860190

    申请日：2013-04-10

    Applicant: BAE Systems Information and Electronics Systems Integration Inc.

    Inventor： Dong Xu ,  Xiaoping S. Yang ,  Wendell Kong ,  Lee M. Mohnkern ,  Phillip M. Smith ,  Pane-chane Chao

    IPC: H01L29/66

    CPC classification number: H01L29/66431 ,  H01L29/7784 ,  H01L29/7785

    Abstract: A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

    Abstract translation: 高功率和高增益超短栅极HEMT器件具有特别的增益和由栅极电极的增加宽度不对称凹槽提供的异常高的击穿电压，通过复合沟道层，其包括嵌入在铟中的薄的砷化铟层 砷化镓沟道层，并通过使用额外的硅掺杂尖峰进行双掺杂。 改进的晶体管在110 GHz时具有超强的14 dB增益，并具有极高的3.5-4 V击穿电压，从而在超短栅极器件中提供高增益，大功率和超高频。

    System for uniformly illuminating target to reduce speckling
    9.
    发明授权
    System for uniformly illuminating target to reduce speckling 有权

    公开(公告)号：US10274745B2

    公开(公告)日：2019-04-30

    申请号：US15029298

    申请日：2015-08-14

    Applicant: BAE Systems Information and Electronics Systems Integration Inc.

    Inventor： Michael J. Choiniere

    IPC: G02B6/04 ,  G02B27/48 ,  G02B26/08 ,  G03B15/06

    Abstract: An illumination system for uniform illumination of a target to facilitate imaging of the target by an imaging system. The apparatus which comprises a laser source for generating a plurality of independent or quasi-independent point sources of light; a fiber optic bundle which comprises a plurality of individual optical fibers for each receiving at least one of the plurality of point sources of light, from the laser source, and directing the plurality of point sources of light toward the target for illumination thereof; and an oscillating diffuser for receiving the plurality of point sources of light and oscillating at a frequency so as to redirect each one of the plurality of point sources of light over an area of the target to be illuminated to facilitate uniform illumination and imaging thereof.

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