公开(公告)号：US20110119366A1

公开(公告)日：2011-05-19

申请号：US13012491

申请日：2011-01-24

Applicant: Boris S. Elman ,  David G. Kenneson ,  Andrew Silletti

Inventor： Boris S. Elman ,  David G. Kenneson ,  Andrew Silletti

IPC: G06F15/173

CPC classification number: H04L41/22 ,  H04L41/0213 ,  H04L41/0893 ,  H04L41/18

Abstract: A graphical user interface and method for customer centric network management. The graphical user interface includes a first view showing text input by a user indicative of customer identification data corresponding to a customer in a network. This data is received by a server connected to the user. The server retrieves stored information corresponding to the customer identification data from a database and provides the stored information and actual circuit path information corresponding to a customer service based on the stored information to the graphical user interface. A second view of the graphical user interface shows the stored information, and a third view shows a graphical representation of a customer path corresponding to the actual circuit path information.

Abstract translation: 用于以客户为中心的网络管理的图形用户界面和方法。 图形用户界面包括第一视图，其示出用户指示与网络中的客户相对应的客户标识数据的文本输入。 该数据由连接到用户的服务器接收。 服务器从数据库检索对应于客户识别数据的存储信息，并将存储的信息和与顾客服务对应的实际电路路径信息基于所存储的信息提供给图形用户界面。 图形用户界面的第二视图显示所存储的信息，第三视图示出了与实际电路路径信息对应的客户路径的图形表示。

公开(公告)号：US5175740A

公开(公告)日：1992-12-29

申请号：US734827

申请日：1991-07-24

Applicant: Boris S. Elman ,  Wayne F. Sharfin

Inventor： Boris S. Elman ,  Wayne F. Sharfin

IPC: H01L33/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323

CPC classification number: H01S5/2231 ,  H01S5/209 ,  H01S5/32308

Abstract: A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser whereby the etch stop layer prevents further etching into said heterostructure.

Abstract translation: 通过外延生长GaAs基异质结构，在异质结构上设置AlAs蚀刻停止层，在蚀刻停止层上设置外延层，以及蚀刻异质结构以形成激光，由此蚀刻停止层进一步防止，制造脊波导激光器 蚀刻到所述异质结构中。

公开(公告)号：US5053843A

公开(公告)日：1991-10-01

申请号：US626159

申请日：1990-12-12

Applicant: A. N. M. Masum Choudhury ,  Chirravuri Jagannath ,  Boris S. Elman ,  Craig A. Armiento

Inventor： A. N. M. Masum Choudhury ,  Chirravuri Jagannath ,  Boris S. Elman ,  Craig A. Armiento

IPC: H01L31/0304 ,  H01L31/0352 ,  H01L31/108

CPC classification number: B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1085 ,  Y02E10/544

Abstract: An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In.sub.0.42 Ga.sub.0.58 As grown on the absorbing layer. The buffer region includes in sequence a first layer of In.sub.0.23 Ga.sub.0.77 As, an In.sub.0.46 Ga.sub.0.54 As/GaAs superlattice, and a second layer of In.sub.0.23 Ga.sub.0.77 As. An interdigitated pattern of Schottky metal contacts is fabricated on the Al.sub.0.3 Ga.sub.0.7 As/GaAs superlattice. This structure is useful in fabricating long-wavelength, monolithic receivers based on GaAs MESFET technology since the optical and electrical characteristics of the structure are preserved during the thermal annealing cycle necesary in ion-implaned GaAs MESFET processes.

Abstract translation: IMSM光电检测器结构包括GaAs衬底，在衬底上生长的缓冲区，在吸收层上生长的In 0.42 Ga 0.58 As的光学活性吸收层。 缓冲区依次包括In0.23Ga0.77As的第一层，In0.46Ga0.54As / GaAs超晶格和第二层In0.23Ga0.77As。 在Al0.3Ga0.7As / GaAs超晶格上制造了肖特基金属触点的交叉图案。 该结构在制造基于GaAs MESFET技术的长波长单片接收机中是有用的，因为在离子掺杂的GaAs MESFET工艺中，在热退火循环期间，保留了结构的光学和电学特性。

公开(公告)号：US07260195B1

公开(公告)日：2007-08-21

申请号：US10007958

申请日：2001-11-13

Applicant: Boris S. Elman ,  Jesse Hefter

Inventor： Boris S. Elman ,  Jesse Hefter

IPC: H04M15/00

CPC classification number: H04M15/00

Abstract: A system and method that enables a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications. In one embodiment, the invention includes a plurality of portable wireless telephone stations; a plurality of wired telephone stations; a plurality of local exchange carriers (LECs); at least one mobile switching center (MSC) and at least one mobile base antenna tower. Each MSC, LEC and IXC is adapted to operate a program that allows a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications.

Abstract translation: 一种使电信消费者能够定义要包括在每月帐单中的组，然后根据消费者的规格周期性地生成账单的系统和方法。 在一个实施例中，本发明包括多个便携式无线电话台; 多个有线电话站; 多个本地交换运营商（LEC）; 至少一个移动交换中心（MSC）和至少一个移动基站天线塔。 每个MSC，LEC和IXC适于操作允许电信消费者定义要包括在每月帐单中的组，然后根据消费者的规格周期性地生成账单的程序。

公开(公告)号：US5300794A

公开(公告)日：1994-04-05

申请号：US671311

申请日：1991-03-19

Applicant: Paul Melman ,  Boris S. Elman ,  Emil S. Koteles ,  Chirravuri Jagannath

Inventor： Paul Melman ,  Boris S. Elman ,  Emil S. Koteles ,  Chirravuri Jagannath

IPC: H01L29/06 ,  H01L21/20 ,  H01L21/203 ,  H01L29/205 ,  H01S5/34 ,  H01L29/161 ,  H01L29/225

CPC classification number: B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  Y10S148/06 ,  Y10S148/097 ,  Y10S148/16 ,  Y10S438/936 ,  Y10S438/938

Abstract: A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate. As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure and the substrate is accommodated by coherent strain in the quantum well structure, while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure.

Abstract translation: 制造半导体异质结构的方法包括相对于衬底高度晶格失配的量子阱有源区的生长。 在衬底上生长具有高于临界值的厚度的缓冲层，由此缓冲层和衬底之间的晶格常数不匹配引起的应力通过形成失配位错而减轻。 在缓冲层上生长应变超晶格结构以终止任何向上传播的位错。 随后，在超晶格结构上生长非限制性阻挡层。 制造方法的结论是量子阱结构在非限制层上的生长，其中量子阱结构和非限制性势垒层之间的晶格常数不匹配小于量子阱结构和衬底之间的晶格常数不匹配。 结果，量子阱结构和衬底之间的大的晶格失配导致的应力只有一小部分是通过量子阱结构中的相干应变来适应的，而剩余的应力通过在空间上形成失配位错来缓解 与量子阱结构分离。

公开(公告)号：US5238868A

公开(公告)日：1993-08-24

申请号：US724437

申请日：1991-07-01

Applicant: Boris S. Elman ,  Emil S. Koteles ,  Paul Melman ,  Craig A. Armiento

Inventor： Boris S. Elman ,  Emil S. Koteles ,  Paul Melman ,  Craig A. Armiento

IPC: H01L21/18 ,  H01L21/324 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01L21/3245 ,  H01S5/34 ,  H01S5/2063 ,  H01S5/3413 ,  H01S5/3432

Abstract: A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

Abstract translation: 选择性地调谐半导体异质结构的带边的方法包括形成与量子阱有源区空间分离的无序区域，随后使异质结构退火，使得无序区域中的空位/缺陷扩散到量子阱区域， 增强了屏障异质结的相互扩散。 当异质结构被掩蔽时，调谐是空间选择的，使得暴露部分对应于期望带隙调谐的区域。 感兴趣的异质结构是III-V材料体系，例如AlGaAs / GaAs，其中活性区域包括诸如单量子阱，多量子阱或超晶格的结构。

公开(公告)号：US4921336A

公开(公告)日：1990-05-01

申请号：US811261

申请日：1985-12-20

Applicant: Mario Dagenais ,  Wayne F. Sharfin ,  Robert J. Seymour ,  Boris S. Elman

Inventor： Mario Dagenais ,  Wayne F. Sharfin ,  Robert J. Seymour ,  Boris S. Elman

IPC: G02F3/02

CPC classification number: G02F3/02

Abstract: An array of bistable devices includes a thin cadmium sulfide platelet having a first portion thereof that is substantially pure and the remaining portion thereof is implanted with atoms that can bind excitons. Such remaining portion can be implanted with ions from a lithium source. Apparatus for providing such an array can include a source of lithium ions and masking means for selectively permitting and for selectively inhibiting passage of ions from the source to pass therethrough and to implant in a pattern onto the platelet. The apparatus operates at temperatures in the neighborhood of liquid helium. A method for producing such an array includes providing a thin, substantially pure, platelet of cadmium sulfide, selectively masking the platelet with a pattern to selectively permit and to selectively inhibit passage of ions onto the platelet, and providing a source of ions. The source of ions, in accordance with certain features, can be lithium ions.

Abstract translation: 双稳态器件的阵列包括硫化镉薄片，其具有基本上纯的第一部分，其剩余部分注入可结合激子的原子。 这样的剩余部分可以从锂源注入离子。 用于提供这种阵列的装置可以包括锂离子源和掩蔽装置，用于选择性地允许和选择性地抑制来自源的离子通过，并且以图案植入血小板。 该装置在液氦附近的温度下工作。 制备这种阵列的方法包括提供薄的，基本上纯的硫化镉血小板，以选择性地掩蔽血小板以选择性地允许和选择性地抑制离子到血小板上的通过并提供离子源。 根据某些特征，离子源可以是锂离子。

公开(公告)号：US4681920A

公开(公告)日：1987-07-21

申请号：US751631

申请日：1985-07-03

Applicant: Daniel J. Sandman ,  Boris S. Elman

Inventor： Daniel J. Sandman ,  Boris S. Elman

IPC: C08F8/22

CPC classification number: C08F8/22

Abstract: Crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least two bromine atoms per repeat unit is disclosed. The crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by a Fourier transform infrared spectrum which includes absorption at 795.+-.5, 835.+-.5, and 865.+-.5 cm.sup.-1. A method for preparing the crystalline brominated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is also disclosed.

公开(公告)号：US4647403A

公开(公告)日：1987-03-03

申请号：US630484

申请日：1984-07-13

Applicant: Boris S. Elman ,  Daniel J. Sandman ,  Sukant K. Tripathy ,  Mrinal K. Thakur

Inventor： Boris S. Elman ,  Daniel J. Sandman ,  Sukant K. Tripathy ,  Mrinal K. Thakur

IPC: C08F8/00 ,  C08L49/00 ,  H01B1/12 ,  H01L51/30 ,  H01B1/06

CPC classification number: H01B1/125 ,  C08F8/00 ,  C08L49/00 ,  H01L51/004

Abstract: Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1.times.10.sup.13 ions/cm.sup.2 to about 1.times.10.sup.17 ions/cm.sup.2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.

Abstract translation: 公开了通过以约1×10 13离子/ cm 2至约1×10 17离子/ cm 2的注量水平将离子注入取代的聚二乙炔中制备的离子注入的聚二乙炔。 离子注入的聚二乙炔表现出不同于未处理的聚二乙炔的电学和/或光学性质。

公开(公告)号：US07143152B1

公开(公告)日：2006-11-28

申请号：US09539972

申请日：2000-03-31

Applicant: Boris S. Elman ,  David G. Kenneson ,  Andrew Silletti

Inventor： Boris S. Elman ,  David G. Kenneson ,  Andrew Silletti

IPC: G06F15/16 ,  G06F15/173

CPC classification number: H04L41/22 ,  H04L41/0213 ,  H04L41/0893 ,  H04L41/18

Abstract: A graphical user interface and method for customer centric network management. The graphical user interface includes a first view showing text input by a user indicative of customer identification data corresponding to a customer in a network. This data is received by a server connected to the user. The server retrieves stored information corresponding to the customer identification data from a database and provides the stored information and actual circuit path information corresponding to a customer service based on the stored information to the graphical user interface. A second view of the graphical user interface shows the stored information, and a third view shows a graphical representation of a customer path corresponding to the actual circuit path information.

Abstract translation: 用于以客户为中心的网络管理的图形用户界面和方法。 图形用户界面包括第一视图，其示出用户指示与网络中的客户相对应的客户标识数据的文本输入。 该数据由连接到用户的服务器接收。 服务器从数据库检索对应于客户识别数据的存储信息，并将存储的信息和与顾客服务对应的实际电路路径信息基于所存储的信息提供给图形用户界面。 图形用户界面的第二视图显示所存储的信息，第三视图示出了与实际电路路径信息对应的客户路径的图形表示。