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16 条记录 (耗时 0.021 秒)

    LED with series-connected monolithically integrated mesas
    1.
    发明申请
    LED with series-connected monolithically integrated mesas 有权
    LED串联单片集成台面

    公开(公告)号：US20050225973A1

    公开(公告)日：2005-10-13

    申请号：US10817603

    申请日：2004-04-02

    申请人： Ivan Eliashevich ,  Chris Bohler ,  Bryan Shelton ,  Hari Venugopalan ,  Xiang Gao

    发明人： Ivan Eliashevich ,  Chris Bohler ,  Bryan Shelton ,  Hari Venugopalan ,  Xiang Gao

    IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/20

    CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130′, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.

    摘要翻译： 发光半导体器件管芯（10,110,210,310）包括电绝缘衬底（12,112）。 第一和第二空间分离的电极（60,62,260,262,360,362）设置在电绝缘基板上。 第一和第二电极限定从第一电极指向第二电极的电流流动方向。 多个发光二极管台面（30,130,130'，230,330）设置在第一和第二空间分离的电极之间的衬底上。 在相邻的发光二极管台面之间的基板上设置电气串联互连（50,150,250,350）。 每个串联互连在电流流动方向上在相邻台面之间承载电流。

    Optimized contact design for flip-chip LED
    2.
    发明授权
    Optimized contact design for flip-chip LED 失效
    优化的倒装芯片LED接点设计

    公开(公告)号：US06958498B2

    公开(公告)日：2005-10-25

    申请号：US10256402

    申请日：2002-09-27

    申请人： Bryan Shelton ,  Ivan Eliashevich ,  Hari Venugopalan

    发明人： Bryan Shelton ,  Ivan Eliashevich ,  Hari Venugopalan

    IPC分类号： H01L33/20 ,  H01L33/38 ,  H01L29/22

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.

    摘要翻译： 发光二极管设有电极和焊盘结构，便于电流扩散和散热。 发光二极管可以形成为具有从第一区域的表面突出的第一区域和台面的层叠结构的管芯。 第一电极可以基本上覆盖台面并且具有设置在其上的多个焊盘使相对于第一电极的接触面积最大化。 第二电极可以作为迹线设置在第一区域的表面上，迹线具有螺旋，分段/叉指，环形或图案。 可选地，迹线包括朝向第一电极的边缘向外突出的角尖。

    Lateral current GaN flip chip LED with shaped transparent substrate
    3.
    发明申请
    Lateral current GaN flip chip LED with shaped transparent substrate 审中-公开
    横向电流GaN倒装芯片LED带形状透明基板

    公开(公告)号：US20070096120A1

    公开(公告)日：2007-05-03

    申请号：US11260784

    申请日：2005-10-27

    申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

    发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

    IPC分类号： H01L31/12

    CPC分类号： H01L33/20

    摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

    摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。

    Thick laser-scribed GaN-on-sapphire optoelectronic devices
    4.
    发明申请
    Thick laser-scribed GaN-on-sapphire optoelectronic devices 审中-公开
    厚激光刻划蓝宝石蓝宝石光电器件

    公开(公告)号：US20050263854A1

    公开(公告)日：2005-12-01

    申请号：US11123796

    申请日：2005-05-06

    申请人： Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

    发明人： Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

    IPC分类号： B23K26/40 ,  H01L21/461 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

    CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

    摘要： A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.

    摘要翻译： 激光刻划厚度大于125微米并具有设置在其上的器件的蓝宝石晶片，以形成激光刻划到蓝宝石晶片中的激光划线的栅格阵列图案。 沿着激光划线分离蓝宝石晶片以分离由激光划线的栅格阵列图案限定的多个器件裸片。 每个器件裸片包括（i）器件和（ii）蓝宝石晶片的厚度大于125微米的部分。 在一些实施例中，GaN LED器件管芯包括GaN基LED器件和支撑GaN基LED器件的蓝宝石衬底。 蓝宝石衬底具有：（i）厚度大于125微米，对于增加光提取有效，由于全内反射的临界角较小; 和（ii）通过激光划线产生的边。

    FLIP CHIP LIGHT EMITTING DIODE WITH MICROMESAS AND A CONDUCTIVE MESH
    6.
    发明申请
    FLIP CHIP LIGHT EMITTING DIODE WITH MICROMESAS AND A CONDUCTIVE MESH 失效
    FLIP芯片发光二极管与微型和导电网

    公开(公告)号：US20050230700A1

    公开(公告)日：2005-10-20

    申请号：US10826980

    申请日：2004-04-16

    申请人： Emil Stefanov ,  Hari Venugopalan ,  Bryan Shelton ,  Ivan Eliashevich

    发明人： Emil Stefanov ,  Hari Venugopalan ,  Bryan Shelton ,  Ivan Eliashevich

    IPC分类号： H01L23/52 ,  H01L33/08 ,  H01L33/38

    CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20

    摘要： A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).

    摘要翻译： 倒装芯片发光二极管（12）包括具有设置在其上的基极半导体层（40）的透光衬底（10）。 导电网（18）设置在基底半导体层（40）上并与其导电接触。 发光微镜（30）设置在导电网（18）的开口（20）中。 每个发光微镜（30）具有与第一导电类型相反的第二导电类型的最顶层（46）。 第一导电型电极（14）设置在基底半导体层（40）上并与导电网（18）电连通。 绝缘层（60）设置在导电网（18）之上。 第二导电型电极层（24）设置在绝缘层（60）和发光微孔（30）之上。 绝缘层（60）将第二导电型电极层（24）与导电网（18）绝缘。

    Laser separation of encapsulated submount
    8.
    发明申请
    Laser separation of encapsulated submount 审中-公开
    激光分离封装的底座

    公开(公告)号：US20070004088A1

    公开(公告)日：2007-01-04

    申请号：US11482363

    申请日：2006-07-07

    申请人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

    发明人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).

    摘要翻译： 在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。 附着的发光芯片（10）被封装。 使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。 子安装晶片（14）沿断裂引发沟槽（30,32）断裂。