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    Laser lift-off of sapphire from a nitride flip-chip
    1.
    发明授权
    Laser lift-off of sapphire from a nitride flip-chip 有权
    激光剥离蓝宝石从氮化物倒装芯片

    公开(公告)号：US07842547B2

    公开(公告)日：2010-11-30

    申请号：US10584434

    申请日：2004-12-21

    Applicant: Bryan S. Shelton ,  Sebastien Libon ,  Ivan Eliashevich

    Inventor： Bryan S. Shelton ,  Sebastien Libon ,  Ivan Eliashevich

    IPC: H01L21/00 ,  H01L21/44

    CPC classification number: H01L33/0079 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.

    Abstract translation: 在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件裸片。 器件芯片被倒装芯片结合到安装座。 倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。 在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。

    Thick laser-scribed GaN-on-sapphire optoelectronic devices
    3.
    发明申请
    Thick laser-scribed GaN-on-sapphire optoelectronic devices 审中-公开
    厚激光刻划蓝宝石蓝宝石光电器件

    公开(公告)号：US20050263854A1

    公开(公告)日：2005-12-01

    申请号：US11123796

    申请日：2005-05-06

    Applicant: Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

    Inventor： Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

    IPC: B23K26/40 ,  H01L21/461 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

    CPC classification number: H01L33/0095 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

    Abstract: A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.

    Abstract translation: 激光刻划厚度大于125微米并具有设置在其上的器件的蓝宝石晶片，以形成激光刻划到蓝宝石晶片中的激光划线的栅格阵列图案。 沿着激光划线分离蓝宝石晶片以分离由激光划线的栅格阵列图案限定的多个器件裸片。 每个器件裸片包括（i）器件和（ii）蓝宝石晶片的厚度大于125微米的部分。 在一些实施例中，GaN LED器件管芯包括GaN基LED器件和支撑GaN基LED器件的蓝宝石衬底。 蓝宝石衬底具有：（i）厚度大于125微米，对于增加光提取有效，由于全内反射的临界角较小; 和（ii）通过激光划线产生的边。

    Laser Lift-Off of Sapphire From a Nitride Flip-Chip
    5.
    发明申请
    Laser Lift-Off of Sapphire From a Nitride Flip-Chip 有权
    激光剥离蓝宝石从氮化物倒装芯片

    公开(公告)号：US20080113460A1

    公开(公告)日：2008-05-15

    申请号：US10584434

    申请日：2004-12-21

    Applicant: Bryan S. Shelton ,  Sebastien Libon ,  Ivan Eliashevich

    Inventor： Bryan S. Shelton ,  Sebastien Libon ,  Ivan Eliashevich

    IPC: H01L21/00

    CPC classification number: H01L33/0079 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.

    Abstract translation: 在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件裸片。 器件芯片被倒装芯片结合到安装座。 倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。 在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。

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