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    DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    显示面板及其制造方法

    公开(公告)号：US20090212290A1

    公开(公告)日：2009-08-27

    申请号：US12354115

    申请日：2009-01-15

    申请人： Joo-Ae YOUN ,  Yang-Ho BAE ,  Chang-Oh JEONG ,  Chong-Chul CHAI ,  Pil-Sang YUN ,  Honglong NING ,  Byeong-Beom KIM

    发明人： Joo-Ae YOUN ,  Yang-Ho BAE ,  Chang-Oh JEONG ,  Chong-Chul CHAI ,  Pil-Sang YUN ,  Honglong NING ,  Byeong-Beom KIM

    IPC分类号： H01L27/088 ,  H01L21/77

    CPC分类号： H01L33/0041 ,  H01L27/124 ,  H01L29/458

    摘要： A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.

    摘要翻译： 显示面板包括： 下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层， 下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线 线和与TFT连接的像素电极。

    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管，包括其的薄膜晶体管基板及其制造方法

    公开(公告)号：US20080191213A1

    公开(公告)日：2008-08-14

    申请号：US11932314

    申请日：2007-10-31

    申请人： Yang Ho Bae ,  Chang Oh Jeong ,  Byeong Beom Kim

    发明人： Yang Ho Bae ,  Chang Oh Jeong ,  Byeong Beom Kim

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/458 ,  H01L27/124

    摘要： A thin film transistor showing desirable contact characteristics during contact with indium tin oxide (ITO) or indium zinc oxide (IZO), in which a first conductive pattern including a gate electrode and a second conductive pattern including a source electrode and a drain electrode are formed without an etching process, a TFT substrate including the TFTs, and a method of manufacturing the same. The thin film transistor includes a gate electrode formed of a first conductive layer, a gate insulating layer covering the gate electrode, a semiconductor layer forming a channel on the gate insulating layer; an ohmic contact layer formed on the semiconductor layer, and a source electrode and a drain electrode formed of a second conductive layer and of a third conductive layer. The second conductive layer includes an aluminum-nickel alloy and nitrogen and is formed on the semiconductor layer. The third conductive layer includes an aluminum-nickel alloy and is formed on the second conductive layer.

    摘要翻译： 在与铟锡氧化物（ITO）或铟锌氧化物（IZO）接触期间显示出期望的接触特性的薄膜晶体管，其中形成包括栅电极的第一导电图案和包括源电极和漏电极的第二导电图案 没有蚀刻处理，包括TFT的TFT基板及其制造方法。 薄膜晶体管包括由第一导电层形成的栅电极，覆盖栅电极的栅极绝缘层，在栅极绝缘层上形成沟道的半导体层; 形成在半导体层上的欧姆接触层，以及由第二导电层和第三导电层形成的源电极和漏电极。 第二导电层包括铝 - 镍合金和氮，并形成在半导体层上。 第三导电层包括铝镍合金，并形成在第二导电层上。