公开(公告)号：US20120039130A1

公开(公告)日：2012-02-16

申请号：US13152776

申请日：2011-06-03

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US08493789B2

公开(公告)日：2013-07-23

申请号：US13152776

申请日：2011-06-03

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-won Yun

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US08654587B2

公开(公告)日：2014-02-18

申请号：US13920691

申请日：2013-06-18

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US08971114B2

公开(公告)日：2015-03-03

申请号：US13368769

申请日：2012-02-08

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

摘要翻译： 非易失性存储器件包括具有连接在衬底和多个位线之间并由选择线选择的多个单元串的存储单元阵列，以及配置成在至少两个方向上驱动选择线的选通电路。

公开(公告)号：US20160042792A1

公开(公告)日：2016-02-11

申请号：US14887595

申请日：2015-10-20

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US09666283B2

公开(公告)日：2017-05-30

申请号：US15152692

申请日：2016-05-12

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11582 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US09349455B2

公开(公告)日：2016-05-24

申请号：US14887595

申请日：2015-10-20

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US08559235B2

公开(公告)日：2013-10-15

申请号：US13045661

申请日：2011-03-11

申请人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

发明人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

IPC分类号： G11C11/34

CPC分类号： G11C16/3445 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/16 ,  H01L29/792

摘要： A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

公开(公告)号：US20120051143A1

公开(公告)日：2012-03-01

申请号：US13045661

申请日：2011-03-11

申请人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

发明人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

IPC分类号： G11C16/06

CPC分类号： G11C16/3445 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/16 ,  H01L29/792

摘要： A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

摘要翻译： 操作非易失性存储器件的方法包括对与多个串选择线（SSL）相关联的存储器单元执行擦除操作，与构成存储块的多个SSL相关联的存储器单元，以及将擦除操作 在对与第一SSL相关联的第一存储器单元进行擦除操作之后，与第二SSL相关联的第二存储器单元。

公开(公告)号：US09378831B2

公开(公告)日：2016-06-28

申请号：US14820895

申请日：2015-08-07

申请人： Jinman Han ,  Sun-Il Shim ,  Donghyuk Chae ,  Jae-Hoon Jang ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

发明人： Jinman Han ,  Sun-Il Shim ,  Donghyuk Chae ,  Jae-Hoon Jang ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC分类号： G11C16/04 ,  G11C16/14 ,  G11C16/16 ,  G11C16/08 ,  G11C16/12 ,  G11C16/26 ,  G11C16/34 ,  H01L27/115

CPC分类号： G11C16/14 ,  G11C16/0466 ,  G11C16/0475 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/12 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.

摘要翻译： 非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。 在操作方法中，连接到位线的第一串的接地选择线可以浮置。 可以将擦除禁止电压施加到连接到位线的第二串的接地选择线。 可以将擦除操作电压施加到第一和第二串。