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1.发明授权
公开(公告)号：US4643797A
公开(公告)日：1987-02-17
申请号：US759243
申请日：1985-07-26
CPC分类号： C30B33/00 , C30B11/00 , C30B11/14 , C30B29/605 , Y02E10/546 , Y10S117/915
摘要： Recrystallized silicon plates are readily removed from a carrier member after melting and recrystallization, the carrier member being composed of a material that is not appreciably wettable by molten silicon, through the use of a parting agent between the silicon and the carrier in solid form as a powder or a raw foil. Fine quartz sand, very fine grained silicon powder, or quartz glass fiber fabric can be employed as the parting agent. The method is employed for the inexpensive manufacture of self-supporting silicon crystal plates for solar cells and allows throughput drawing rates of greater than 1 m.sup.2 /min.
摘要翻译： 在结晶和重结晶之后，重结晶硅板容易从载体构件中除去，载体构件由不受熔融硅润湿的材料组成，通过使用硅和载体之间的分离剂以固体形式作为 粉末或生箔。 可以使用精细的石英砂，非常细的硅粉或石英玻璃纤维织物作为脱模剂。 该方法用于廉价制造用于太阳能电池的自支撑硅晶体板，并且允许大于1m 2 / min的通过量。
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2.发明授权Method for producing plate-, tape- or film-shaped Si crystal bodies for solar cells 失效用于生产太阳能电池板，带或薄膜状Si晶体的方法
公开(公告)号：US4357200A
公开(公告)日：1982-11-02
申请号：US261780
申请日：1981-05-08
申请人： Christa Grabmaier
发明人： Christa Grabmaier
IPC分类号： C30B1/02 , C30B29/06 , C30B29/64 , H01L21/208
摘要： Large surfaced, pore-free silicon bodies useful for processing into solar cells are produced by providing at least two layers formed from at least two distinct silicon materials, each containing different amounts of germanium therein and thus having different melting points. A laminate is formed of such layers and sintered at a temperature at which only one of the silicon materials becomes molten so that the resultant molten layer effectively seals the pores of the other layers and upon cooling a unitary silicon body is attained. In certan embodiments, a molten silicon material is applied as a liquified film onto a solidified layer composed of different silicon material.
摘要翻译： 通过提供由至少两种不同的硅材料形成的至少两层，其中各自含有不同量的锗并因此具有不同的熔点，从而产生用于加工成太阳能电池的大表面无孔硅体。 层压体由这样的层形成，并且在只有一种硅材料熔化的温度下烧结，使得所得到的熔融层有效地密封其它层的孔，并且在冷却整体硅体时达到。 在认证实施例中，将熔融硅材料作为液化膜施加到由不同硅材料组成的固化层上。
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公开(公告)号：US4254200A
公开(公告)日：1981-03-03
申请号：US16830
申请日：1979-03-02
申请人： Helmut Thomann , Christa Grabmaier
发明人： Helmut Thomann , Christa Grabmaier
IPC分类号： A61B6/00 , C04B35/00 , G01T1/16 , G01T1/20 , G03G5/02 , G03G5/08 , G03G5/082 , G03G15/22 , H01L31/0264 , B05D5/12 , C01G29/00
摘要： X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like). This is a division of application Ser. No. 837,197, filed Sept. 28, 1977.
摘要翻译： 通过将高能辐射束照射到具有式Bi10-14X1On的结晶铋氧化物化合物上来检测X射线或γ射线，其中X是选自Al，Ga，Ge，Si中的至少一种元素，以及 Ti和n是基本上等于化合物中化学计量量的氧的数字。 上述氧化铋结晶化合物可以放置在辐射剂量计中，或者作为辐射敏感性涂层施用于用于制备静电复印的装置的圆柱体或平板上（即，在静电印刷工艺中等）。 这是一个应用程序系列 1977年9月28日提交的第837,197号。
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4.发明授权Method for producing plate-, tape- or film-shaped Si crystal bodies for solar cells 失效用于生产太阳能电池板，带或薄膜状Si晶体的方法
公开(公告)号：US4357201A
公开(公告)日：1982-11-02
申请号：US261921
申请日：1981-05-08
申请人： Christa Grabmaier , Heinz Holzapfel
发明人： Christa Grabmaier , Heinz Holzapfel
IPC分类号： H01L31/18 , C30B1/02 , H01L21/208 , C30B29/06
CPC分类号： C30B1/02 , C30B29/06 , C30B29/605
摘要： Selectively shaped silicon crystal bodies, such as plate-, tape- or film-shaped bodies, having crystalline pillarlike structures therein are produced as substantially porefree bodies by forming a slurry from an admixture of relatively fine sized silicon particles, optional additives and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, applying a substantially uniform layer of a germanium powder onto a surface of such self-supporting layer and then sintering the resultant structure in a protective gas atmosphere at temperatures below about 1430.degree. C. until a layer of crystalline silicon particles is generated, which particles have an average diameter substantially corresponding to the thickness of the dried layer.
摘要翻译： 通过从相对精细尺寸的硅颗粒，任选的添加剂和液体粘合剂的混合物形成浆料来制备具有晶体柱状结构的选择性形状的硅晶体，例如具有结晶柱状结构的基本上无孔的硅体 将这样的浆料作为相对薄的层挤出到第一支撑构件上，干燥这种挤出层直到其自支撑并移除这种支撑构件，将基本均匀的锗粉层施加到这种自支撑层的表面上，以及 然后在低于约1430℃的温度下在保护气体气氛中烧结所得结构，直到产生一层结晶硅颗粒，该颗粒的平均直径基本上对应于干燥层的厚度。
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5.发明授权
公开(公告)号：US4330358A
公开(公告)日：1982-05-18
申请号：US160214
申请日：1980-06-17
申请人： Christa Grabmaier , Franz Otto , Helmut Thomann
发明人： Christa Grabmaier , Franz Otto , Helmut Thomann
IPC分类号： H01L31/04 , C30B1/02 , H01L21/208 , H01L31/18
摘要： Selectively shaped silicon crystal bodies, such as plate- or tape-shaped bodies, having crystalline pillar-like structures therein are produced by forming a slurry from an admixture of relatively fine sized silicon particles and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, and then sintering such dried layer in a protective gas atmosphere at temperatures below about 1430.degree. C. until a layer of crystalline silicon particles are generated or grown having an average diameter substantially corresponding to the thickness of the dried slurry layer.
摘要翻译： 通过从相对精细尺寸的硅颗粒和液体粘合剂的混合物形成浆料来制造在其中具有结晶柱状结构的诸如板状或带状体的选择性形状的硅晶体，挤出相当薄的浆料 层压到第一支撑构件上，干燥这种挤出层直到其变得自支撑并且去除这种支撑构件，然后在保护气体气氛中在低于约1430℃的温度下将这种干燥层烧结直到一层结晶硅颗粒为 产生或生长的平均直径基本上对应于干燥的浆料层的厚度。
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6.发明授权Process for producing a phosphor layer by reacting a doped substance with silica 失效通过掺杂物质与二氧化硅反应来生产荧光体层的方法
公开(公告)号：US5399185A
公开(公告)日：1995-03-21
申请号：US167864
申请日：1993-12-15
申请人： Thomas Berthold , Christa Grabmaier
发明人： Thomas Berthold , Christa Grabmaier
IPC分类号： C03C17/23 , C03C23/00 , C03C25/10 , C03C25/42 , C09K11/00 , C09K11/57 , C09K11/59 , C09K11/74 , C09K11/77 , C09K11/79 , H01J9/22 , C03C17/00
CPC分类号： C03C17/23 , C03C25/42 , C09K11/574 , C09K11/7442 , C09K11/7706 , C03C2217/23 , C03C2218/32
摘要： A doped starting substance is applied to a substrate composed of SiO.sub.2 glass. A phosphor layer is formed by reaction of the starting substance with SiO.sub.2 of the substrate to form a silicate of the starting substance. This reaction is carried out in a heat-treatment process in an oxygen-containing atmosphere. Zn or Gd is preferably used as starting substance.
摘要翻译： PCT No.PCT / DE92 / 00534 Sec。 371日期：1993年12月15日 102（e）日期1993年12月15日PCT提交1992年6月29日PCT公布。 公开号WO93 / 02982 日期：1993年2月18日。将掺杂的原料施加到由SiO 2玻璃构成的基板上。 通过起始物质与基底的SiO 2反应形成荧光体层，形成起始物质的硅酸盐。 该反应在含氧气氛的热处理工序中进行。 优选使用Zn或Gd作为原料。
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公开(公告)号：US4330524A
公开(公告)日：1982-05-18
申请号：US105947
申请日：1979-12-20
CPC分类号： G21K1/06 , C01G29/00 , C30B15/00 , C30B29/32 , G21K2201/062 , G21K2201/067
摘要： A monocrystalline Bi.sub.2 Ge.sub.3 O.sub.9 is formed, for example, via the Czochralski technique from a melt containing pure Bi.sub.2 O.sub.3 and GeO.sub.2 at a molecular ratio of 1:3. This crystal is useful as an x-ray spectrometer crystal and/or as a light defector crystal in conjunction with an ultrasonic deflection field properly applied to such crystals.
摘要翻译： 例如，通过Czochralski技术从含有纯Bi 2 O 3和GeO 2的分子比为1：3的熔体形成单晶Bi2Ge3O9。 该晶体可用作x射线光谱仪晶体和/或作为适合于这种晶体的超声波偏转场的光反射晶体。
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公开(公告)号：US5518659A
公开(公告)日：1996-05-21
申请号：US378404
申请日：1995-01-26
CPC分类号： C09K11/7789 , C04B35/50 , C04B35/547 , C09K11/7771
摘要： In an improved method for manufacturing a phosphor ceramic on the basis of a rare earth oxisulfide, a phosphor powder having a high specific surface of more than 10 m.sup.2 per gram is employed and is compressed to form a high-density, optically pure and translucent ceramic by single-axis hot-pressing under a reducing atmosphere.
摘要翻译： 在一种基于稀土氧硫化物制造荧光体陶瓷的改进方法中，使用具有高于10m 2 / g的高比表面积的荧光粉，并将其压缩以形成高密度，光学纯的和半透明的陶瓷 在还原气氛下通过单轴热压。
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公开(公告)号：US4599245A
公开(公告)日：1986-07-08
申请号：US649311
申请日：1984-09-11
IPC分类号： C30B13/06 , C30B11/00 , C30B11/14 , C30B13/08 , C30B15/00 , C30B29/06 , C30B29/64 , H01L31/04 , B05D3/02 , B05D5/12 , H01L31/00
CPC分类号： C30B15/007 , C30B11/002 , C30B11/14 , C30B13/08 , Y10S117/90 , Y10S117/914 , Y10S117/915
摘要： Starting plate-like silicon bodies matched to the dimensions desired in a product silicon crystal bodies are melted and then crystallized on a horizontal carrier member having a net structure using a heater arrangement. The carrier member is substantially not wettable by molten silicon and preferably consists of a quartz glass fiber fabric and is removable after the crystallization. The method is useful for the manufacture of silicon for solar cells and prevents contaminants from the carrier member from being incorporated into the product silicon crystal body and thereby deteriorating the electrical properties of the solar cells.
摘要翻译： 与产品硅晶体中所需的尺寸匹配的起始板状硅体熔化，然后使用加热器装置在具有网状结构的水平载体构件上结晶。 载体构件基本上不被熔融的硅润湿，并且优选由石英玻璃纤维织物组成，并且可以在结晶之后被去除。 该方法对于太阳能电池用硅的制造是有用的，并且防止载体成分中的污染物掺入产品硅晶体中，从而降低太阳能电池的电性能。
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公开(公告)号：US5562860A
公开(公告)日：1996-10-08
申请号：US501737
申请日：1995-07-12
CPC分类号： C09K11/7789 , C04B35/50 , C09K11/7771
摘要： A phosphor for a radiation detector is based on a phosphor ceramic of a rare earth oxisulfide with the general sum formula (M.sub.1-x Ln.sub.x).sub.2 O.sub.2 S, wherein M is at least one element from the group Y, La and Gd, Ln is at least one element of the group Eu, Pr, Tb, Yb, Dy, Sm and Ho, and wherein (2.times.10.sup.-1).gtoreq..times..gtoreq.(1.times.10.sup.-6) and which is doped an element D selected from Zr, Ti and Hf and at least one element A selected from Co, Mn and Ni for reducing the afterglow.
摘要翻译： 用于放射线检测器的荧光体基于具有总和式（M1-xLnx）2O2S的稀土氧硫化物的荧光体陶瓷，其中M是至少一种来自Y，La和Gd的元素，Ln是至少一种 Eu，Pr，Tb，Yb，Dy，Sm和Ho组成的元素，并且其中掺杂有选自Zr，Ti的元素D，并且其中（2×10 -1） Hf和选自Co，Mn和Ni中的至少一种元素A，用于减少余辉。
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