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公开(公告)号：US09694463B2
公开(公告)日：2017-07-04
申请号：US14443132
申请日：2012-12-07
发明人： Chan-Gi Jung , Ui-Seuk Yoon
摘要： Disclosed herein is an apparatus for grinding a compression line spring. The apparatus includes a lower chain conveyor (100), an upper chain conveyor (200), and grinding units (300). The lower chain conveyor includes chain units (110) and (110′) provided facing each other at positions spaced apart from each other. Each chain unit (110), (110′) includes first V-shaped blocks (115) for supporting compression line springs. The upper chain conveyor includes chain units (210) and (210′) provided facing each other at positions spaced apart from each other. Each chain unit (210), (210′) includes second V-shaped blocks (215) for compressing downward upper portions of the compression line springs seated on the first V-shaped blocks (115) and thus supporting the compression line springs. The grinding units (300) grind seat surfaces formed on opposite ends of the compression line springs that are being moved by the lower chain conveyor and the upper chain conveyor.
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公开(公告)号：US09718162B2
公开(公告)日：2017-08-01
申请号：US14759745
申请日：2013-04-17
发明人： Chan-Gi Jung , Ui-Seuk Yoon
CPC分类号： B24B7/167 , B24B7/17 , B24B21/008 , B24B27/0069 , B24B41/005
摘要： Disclosed herein is an apparatus for grinding a compression line spring. The apparatus includes a lower chain conveyor (100), an upper chain conveyor (200), and grinding units (300). The lower chain conveyor includes chain units each having first support blocks (115) for supporting compression line springs. The upper chain conveyor includes chain units each having second support blocks (215) for compressing downward upper portions of the compression line springs and thus supporting the compression line springs. The grinding units grind seat surfaces formed on opposite ends of the compression line springs that are moved by the upper and lower chain conveyors. A V-shaped depression (115a) is formed in each first support block so that each of the compression line springs is seated onto the corresponding V-shaped depression. A lower surface (215a) of the second support block that compresses the compression line springs has a planar structure.
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公开(公告)号：US20150273565A1
公开(公告)日：2015-10-01
申请号：US14396515
申请日：2014-03-27
发明人： Chan-Gi Jung , Ui-Seuk Yoon
摘要： The present invention relates to a hot coiling machine, and an object of the invention is to provide a hot coiling machine that produces coil springs having various coil shapes and diameters from a heated wire without a mandrel. The present invention provides a hot coiling machine including: a center roll rotating by a drive unit; a feeding roll disposed near the center roll and facing an external surface of the center roll, the center roll being configured to move by a first positioning unit and being rotated by a drive unit thus moving a wire together with the center roll; a forming roll for forming the wire into a coil shape; and a pitch control unit disposed near the forming roll to come into contact with the coiled wire and pushing the coiled wire to provide the coiled wire with a desired pitch.
摘要翻译： 本发明涉及一种热卷取机，其目的在于提供一种热卷取机，其从没有心轴的加热丝线产生具有各种线圈形状和直径的螺旋弹簧。 本发明提供一种热卷取机，包括：由驱动单元旋转的中心辊; 馈送辊，设置在中心辊附近并面向中心辊的外表面，中心辊被构造成通过第一定位单元移动并由驱动单元旋转，从而使中心辊与导线一起移动; 用于将线形成线圈形状的成形辊; 以及俯仰控制单元，其设置在成形辊附近以与线圈接触并且推动盘绕线以提供具有期望间距的盘绕线。
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4.发明授权Fusing device with curved nip forming member and image forming apparatus having the same 有权具有弯曲辊隙形成部件的定影装置和具有该定影装置的成像装置公开(公告)号：US08655245B2
公开(公告)日：2014-02-18
申请号：US12926296
申请日：2010-11-08
申请人： Sang Cheol Moon , Hwan Hee Kim , Dae Won Kang
发明人： Sang Cheol Moon , Hwan Hee Kim , Dae Won Kang
IPC分类号： G03G15/20
CPC分类号： G03G15/2028 , G03G15/6576 , G03G2215/2035
摘要： An image forming apparatus including a fusing belt, a pressure roller disposed to face the fusing belt so as to press a recording medium onto the fusing belt, a nip forming member to support an inner surface of the fusing belt so as to form a fusing nip along with the pressure roller, and a heat source disposed inside the fusing belt to simultaneously apply radiant heat to the fusing belt and the nip forming member. The nip forming member includes a hill portion, which is located to one side thereof farther downstream in a movement direction of the recording medium and protrudes toward the hill portion. The hill portion causes the recording medium, which has curled in a given direction, to be bent in an opposite direction immediately prior to exiting from between the nip forming member and the pressure roller, thereby reducing curling of the recording medium.
摘要翻译： 一种图像形成装置，包括：定影带，设置成面对定影带以将记录介质按压到定影带上的压力辊，夹持形成部件，用于支撑定影带的内表面，以形成定影辊隙 以及设置在定影带内部的热源，同时对定影带和辊隙形成构件施加辐射热。 辊隙形成构件包括山形部分，其位于记录介质的移动方向上更远的下游的一侧，并且朝向山丘部分突出。 山丘部分使得在给定方向上卷曲的记录介质在从辊隙形成构件和压力辊之间立即在相反的方向上弯曲，从而减少记录介质的卷曲。
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公开(公告)号：US09744584B2
公开(公告)日：2017-08-29
申请号：US14396515
申请日：2014-03-27
发明人： Chan-Gi Jung , Ui-Seuk Yoon
摘要： The present invention relates to a hot coiling machine, and an object of the invention is to provide a hot coiling machine that produces coil springs having various coil shapes and diameters from a heated wire without a mandrel. The present invention provides a hot coiling machine including: a center roll rotating by a drive unit; a feeding roll disposed near the center roll and facing an external surface of the center roll, the center roll being configured to move by a first positioning unit and being rotated by a drive unit thus moving a wire together with the center roll; a forming roll for forming the wire into a coil shape; and a pitch control unit disposed near the forming roll to come into contact with the coiled wire and pushing the coiled wire to provide the coiled wire with a desired pitch.
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6.发明授权Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method 失效在半导体制造工艺中使用旋涂玻璃组合物和使用相同方法的隔离方法形成氧化硅层的方法公开(公告)号：US06479405B2
公开(公告)日：2002-11-12
申请号：US09985615
申请日：2001-11-05
申请人： Jung-Ho Lee , Dong-Jun Lee , Dae-Won Kang , Sung-Taek Moon , Gi-Hag Lee , Jung-Sik Choi
发明人： Jung-Ho Lee , Dong-Jun Lee , Dae-Won Kang , Sung-Taek Moon , Gi-Hag Lee , Jung-Sik Choi
IPC分类号： H01L2131
CPC分类号： C23C18/1283 , C08G77/62 , C23C18/1212 , C23C18/122 , C23C18/1279 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/76229 , H01L21/823481 , H01L27/105 , H01L27/11521
摘要： A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2NH2)n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.
摘要翻译： 一种形成半导体器件的氧化硅层的方法，包括在具有表面不连续性的半导体衬底上涂覆包含具有式（SiH 2 NH 2）n的化合物的全氢聚硅氮烷的旋涂玻璃（SOG）组合物，其中n表示正整数， 以形成平面SOG层; 以及通过实施第一热处理以将SOG溶液转化为氧化物并进行第二热处理以致密化由此获得的氧化物，形成具有平坦表面的氧化硅层。 本发明的氧化硅层可以在具有高纵横比的VLSI的间隙之间埋设间隙，并赋予与CVD氧化物层相同的特性。 此外，本发明中限制了活性区域中硅的氧化以确保尺寸稳定性。 还公开了通过该方法制造的半导体器件。
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公开(公告)号：US20120107029A1
公开(公告)日：2012-05-03
申请号：US12926296
申请日：2010-11-08
申请人： Sang Cheol Moon , Hwan Hee Kim , Dae Won Kang
发明人： Sang Cheol Moon , Hwan Hee Kim , Dae Won Kang
IPC分类号： G03G15/20
CPC分类号： G03G15/2028 , G03G15/6576 , G03G2215/2035
摘要： An image forming apparatus including a fusing belt, a pressure roller disposed to face the fusing belt so as to press a recording medium onto the fusing belt, a nip forming member to support an inner surface of the fusing belt so as to form a fusing nip along with the pressure roller, and a heat source disposed inside the fusing belt to simultaneously apply radiant heat to the fusing belt and the nip forming member. The nip forming member includes a hill portion, which is located to one side thereof farther downstream in a movement direction of the recording medium and protrudes toward the hill portion. The hill portion causes the recording medium, which has curled in a given direction, to be bent in an opposite direction immediately prior to exiting from between the nip forming member and the pressure roller, thereby reducing curling of the recording medium.
摘要翻译： 一种图像形成装置，包括：定影带，设置成面对定影带以将记录介质按压到定影带上的压力辊，夹持形成部件，用于支撑定影带的内表面，以形成定影辊隙 以及设置在定影带内部的热源，同时对定影带和辊隙形成构件施加辐射热。 辊隙形成构件包括山形部分，其位于记录介质的移动方向上更远的下游的一侧，并且朝向山丘部分突出。 山丘部分使得在给定方向上卷曲的记录介质在从辊隙形成构件和压力辊之间立即在相反的方向上弯曲，从而减少记录介质的卷曲。
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8.发明授权Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same 有权旋涂玻璃组合物及其半导体制造工艺中使用其形成氧化硅层的方法公开(公告)号：US07179537B2
公开(公告)日：2007-02-20
申请号：US10278992
申请日：2002-10-24
申请人： Jung-Ho Lee , Jung-Sik Choi , Hong-Ki Kim , Dong-Jun Lee , Dae-Won Kang , Sang-Mun Chon
发明人： Jung-Ho Lee , Jung-Sik Choi , Hong-Ki Kim , Dong-Jun Lee , Dae-Won Kang , Sang-Mun Chon
CPC分类号： H01L21/76229 , C08G77/62 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/823481 , Y10T428/31663
摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有下式化合物的全氢聚硅氮烷的SOG组合物 - （SiH 2 NH 3）n - 其中n表示 正整数，重均分子量在约4,000至8,000范围内，分子量分散在约3.0至4.0的范围内，以形成平面SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。
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公开(公告)号：US20060216942A1
公开(公告)日：2006-09-28
申请号：US11373425
申请日：2006-03-10
申请人： Gi-Jung Kim , Sang-Mun Chon , Young-Nam Kim , Dae-Won Kang , Young-Sam Lim
发明人： Gi-Jung Kim , Sang-Mun Chon , Young-Nam Kim , Dae-Won Kang , Young-Sam Lim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67313 , H01L21/67326
摘要： A wafer carrier is provided. The wafer carrier includes a storage holding member for storing a plurality of wafers and includes a plurality of open portions. The wafer carrier further includes a front fixing plate and a rear fixing plate disposed at a front and a rear end of the storage holding member, respectively. The front and rear fixing plates each face a side of at least one of the plurality of wafers. Moreover, left and right edges of the plurality of wafers stored in the storage holding member are exposed by the plurality of open portions.
摘要翻译： 提供晶片载体。 晶片载体包括用于存储多个晶片的存储保持构件，并且包括多个开放部分。 晶片载体还包括分别设置在存储保持构件的前端和后端的前固定板和后固定板。 前固定板和后固定板各自面对多个晶片中的至少一个的一侧。 此外，存储在存储保持部件中的多个晶片的左右边缘被多个开口部露出。
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10.发明授权Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same 有权旋涂玻璃组合物及其半导体制造工艺中使用其形成氧化硅层的方法公开(公告)号：US06706646B1
公开(公告)日：2004-03-16
申请号：US09686624
申请日：2000-10-12
申请人： Jung-Ho Lee , Jung-Sik Choi , Hong-Ki Kim , Dong-Jun Lee , Dae-Won Kang , Sang-Mun Chon
发明人： Jung-Ho Lee , Jung-Sik Choi , Hong-Ki Kim , Dong-Jun Lee , Dae-Won Kang , Sang-Mun Chon
IPC分类号： H01L2131
CPC分类号： H01L21/76229 , C08G77/62 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/823481 , Y10T428/31663
摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有式 - （SiH 2 NH）n - 的化合物的全氢聚硅氮烷的SOG组合物，其中n表示正整数，重均分子量在约4,000至8,000范围内 ，分子量分散在约3.0〜4.0的范围内，形成平面状的SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。
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