公开(公告)号：US06312486B1

公开(公告)日：2001-11-06

申请号：US09605164

申请日：2000-06-27

Applicant: Gurtej Singh Sandhu ,  Donald Westmoreland ,  Daniel Koos

Inventor： Gurtej Singh Sandhu ,  Donald Westmoreland ,  Daniel Koos

IPC: B08B700

CPC classification number: H01L21/02024 ,  C09G1/02 ,  H01L21/31053

Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.

Abstract translation: 在化学机械抛光期间，浆料组合物增强了从半导体晶片的表面去除耐抛光表面部分。 浆料组合物是包括溶剂，多个磨料颗粒和螯合剂的混合物。 研磨颗粒磨损晶片的表面以去除表面部分和下面的材料。 螯合剂被选择为与晶片表面表面上的抗抛光表面部分反应，从而使得表面部分更容易用基本上非侵蚀性的化学机械抛光技术从表面层去除。 在操作中，通过螯合剂的化学作用和磨料颗粒的机械效应的组合来去除表面部分和下面的体积材料。

公开(公告)号：US6099604A

公开(公告)日：2000-08-08

申请号：US924468

申请日：1997-08-21

Applicant: Gurtej Singh Sandhu ,  Donald Westmoreland ,  Daniel Koos

Inventor： Gurtej Singh Sandhu ,  Donald Westmoreland ,  Daniel Koos

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  B08B7/00

CPC classification number: H01L21/02024 ,  C09G1/02 ,  H01L21/31053

Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.

Abstract translation: 在化学机械抛光期间，浆料组合物增强了从半导体晶片的表面去除耐抛光表面部分。 浆料组合物是包括溶剂，多个磨料颗粒和螯合剂的混合物。 研磨颗粒磨损晶片的表面以去除表面部分和下面的材料。 螯合剂被选择为与晶片表面表面上的抗抛光表面部分反应，从而使得表面部分更容易用基本上非侵蚀性的化学机械抛光技术从表面层去除。 在操作中，通过螯合剂的化学作用和磨料颗粒的机械效应的组合来去除表面部分和下面的体积材料。

公开(公告)号：US20070105377A1

公开(公告)日：2007-05-10

申请号：US11586394

申请日：2006-10-24

Applicant: Daniel Koos ,  Steven Mayer ,  Heung Park ,  Timothy Cleary ,  Thomas Mountsier

Inventor： Daniel Koos ,  Steven Mayer ,  Heung Park ,  Timothy Cleary ,  Thomas Mountsier

IPC: B05D5/12 ,  B05D3/04 ,  B05D3/10 ,  B05D1/18 ,  C23C16/00 ,  C23F1/00 ,  H01L21/302

CPC classification number: C23F1/18 ,  C23C18/1608 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/1696 ,  C23C18/1893 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

Abstract translation: 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。