公开(公告)号：US06537606B2

公开(公告)日：2003-03-25

申请号：US09902306

申请日：2001-07-10

申请人： Lisa P. Allen ,  David B. Fenner

发明人： Lisa P. Allen ,  David B. Fenner

IPC分类号： B05D100

CPC分类号： H01L21/67069 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/336 ,  H01L21/3065 ,  H01L21/32131 ,  H01L21/32132 ,  H01L22/12 ,  H01L22/20

摘要： The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

公开(公告)号：US06498107B1

公开(公告)日：2002-12-24

申请号：US09563035

申请日：2000-05-01

申请人： David B. Fenner

发明人： David B. Fenner

IPC分类号： H01L21302

CPC分类号： H01L21/28194 ,  C23C14/0031 ,  C23C14/022 ,  H01J2237/0812 ,  H01L21/02054 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02247 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02307 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/3185 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing environmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

摘要翻译： 公开了用于通过终止表面键和随后的反应性沉积而在不含天然氧化物的硅晶片上进行气体簇离子束沉积薄膜的方法。 硅表面的氢终止使其对含氧环境气体再次氧化是惰性的，甚至是在真空系统中发现的残留物，例如用于沉积膜的那些。 氮终端改善了覆盖金属氧化物薄膜的界面。 该膜与硅晶体表面紧密接触形成几乎理想的界面。

公开(公告)号：USRE35872E

公开(公告)日：1998-08-18

申请号：US633483

申请日：1996-04-17

申请人： David B. Fenner ,  Robert M. Carangelo

发明人： David B. Fenner ,  Robert M. Carangelo

IPC分类号： G01J3/26 ,  G01J3/28 ,  G01J5/20 ,  G01J3/51 ,  H01L27/146 ,  H01L39/00

CPC分类号： G01J5/20 ,  G01J3/26 ,  G01J3/2803

摘要： An array of superconducting bolometers, assembled with a superposed interference layer of graduated thickness, provides a microelectronic detector assembly that discriminates radiation impinging thereon, as a function of wavelength, and that can be used for transform spectroscopy, color-imaging, and the like. The interference coating will preferably be of step-like form, with each plateau of the structure being of the same spatial extent as the bolometer with which it is associated.

摘要翻译： 由层叠厚度叠加的干涉层组装的超导测辐射热表阵列提供了一个微电子检测器组件，该微电子检测器组件根据波长鉴别入射到其上的辐射，并可用于变换光谱学，彩色成像等。 干涉涂层将优选为阶梯状，其结构的每个平台具有与其相关联的测辐射热计相同的空间范围。

公开(公告)号：US5354989A

公开(公告)日：1994-10-11

申请号：US997457

申请日：1992-12-28

申请人： David B. Fenner ,  Robert M. Carangelo

发明人： David B. Fenner ,  Robert M. Carangelo

IPC分类号： G01J3/26 ,  G01J3/28 ,  G01J5/20 ,  G01J3/51 ,  H01L27/146 ,  H01L39/00

CPC分类号： G01J5/20 ,  G01J3/26 ,  G01J3/2803

摘要： An array of superconducting bolometers, assembled with a superposed interference layer of graduated thickness, provides a microelectronic detector assembly that discriminates radiation impinging thereon, as a function of wavelength, and that can be used for transform spectroscopy, color-imaging, and the like. The interference coating will preferably be of step-like form, with each plateau of the structure being of the same spatial extent as the bolometer with which it is associated.

摘要翻译： 由层叠厚度叠加的干涉层组装的超导测辐射热表阵列提供了一个微电子检测器组件，该微电子检测器组件根据波长鉴别入射到其上的辐射，并可用于变换光谱学，彩色成像等。 干涉涂层将优选为阶梯状，其结构的每个平台具有与其相关联的测辐射热计相同的空间范围。

公开(公告)号：US06805807B2

公开(公告)日：2004-10-19

申请号：US09999099

申请日：2001-10-31

申请人： David B. Fenner

发明人： David B. Fenner

IPC分类号： H01L21302

CPC分类号： H01J37/317 ,  H01J2237/0812 ,  H01L21/31051 ,  H01L21/32115

摘要： A method of processing the surface of a workpiece using an adaptive gas cluster ion beam is disclosed. The invention provides a method of reducing the surface roughness and/or improving the surface smoothing of a workpiece by etching at various etch rates. The workpiece is initially processed with a gas cluster ion beam having an initial etch rate and then the beam is adjusted so that the workpiece is processed with one or more lower etch rates. The advantages are minimum required processing time, minimum remaining roughness of the final surface, and minimum material removal in order to attain a desired level of smoothness.

摘要翻译： 公开了一种使用自适应气体簇离子束来处理工件表面的方法。 本发明提供一种通过以各种蚀刻速率的蚀刻来降低表面粗糙度和/或改善工件的表面平滑化的方法。 首先用具有初始蚀刻速率的气体簇离子束处理工件，然后调整光束，使得工件以一个或多个较低蚀刻速率进行处理。 优点是最小化所需的处理时间，最终表面的最小剩余粗糙度和最小材料去除以获得所需的平滑度。

公开(公告)号：US5358925A

公开(公告)日：1994-10-25

申请号：US927791

申请日：1992-08-10

申请人： George A. Neville Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

发明人： George A. Neville Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

IPC分类号： C30B23/02 ,  H01L39/24 ,  H01L39/22 ,  H01L39/12

CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-. 0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

摘要翻译： 外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％）， 在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。 使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。 衬底可以移动到沉积室而没有污染。 氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。 此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。 然后将结构在氧气气氛中冷却。

公开(公告)号：US06375790B1

公开(公告)日：2002-04-23

申请号：US09412949

申请日：1999-10-05

申请人： David B. Fenner

发明人： David B. Fenner

IPC分类号： C23F102

CPC分类号： H01J37/317 ,  H01J2237/0812 ,  H01L21/31051 ,  H01L21/32115

摘要： A method and apparatus for adapting the nature of an ion beam during processing of the surface of a solid workpiece so as to improve the reduction of surface roughness (smoothing) by using a GCIB. In addition, the invention provides for surface smoothing in combination with etching to predetermined depths and surface contamination removal. Advantages are minimum required processing time, minimum remaining roughness of the final surface, and reduction in the amount of material that must be removed in order to attain a desired level of smoothness.

摘要翻译： 一种用于在固体工件的表面的加工期间适应离子束的性质的方法和装置，以便通过使用GCIB来改善表面粗糙度（平滑化）的降低。 此外，本发明提供了与预定深度和表面污染物去除的蚀刻相结合的表面平滑化。 优点是最小化所需的处理时间，最终表面的最小剩余粗糙度以及必须去除的材料的量的减少以获得期望的平滑度。

公开(公告)号：US5173474A

公开(公告)日：1992-12-22

申请号：US667669

申请日：1991-03-11

申请人： George A. N. Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

发明人： George A. N. Connell ,  David B. Fenner ,  James B. Boyce ,  David K. Fork

IPC分类号： C30B23/02 ,  H01L39/24

CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S505/701 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/734

摘要： An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

摘要翻译： 外延沉积在单晶硅衬底表面上的YSZ缓冲层上的HTSC材料具有至少85°K的零电阻转变温度，不超过1.0°K的转变宽度（10-90％）， 在300°K的电阻率不超过300微欧姆厘米，电阻率比（300°K / 100°K）为3.0 +/- 0.2。 使用旋转蚀刻工艺清洁硅衬底的表面，以产生用诸如氢的元素的原子层终止的不与硅反应的原子清洁表面。 衬底可以移动到沉积室而没有污染。 氢气在室中蒸发，然后优选通过激光烧蚀外延沉积YSZ。 此后，优选通过激光烧蚀外延沉积诸如YBCO的HTSC材料。 然后将结构在氧气气氛中冷却。