公开(公告)号：US08883701B2

公开(公告)日：2014-11-11

申请号：US13171252

申请日：2011-06-28

申请人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

发明人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

IPC分类号： C11D1/00 ,  C11D3/04 ,  C11D3/20 ,  C11D3/33 ,  C11D11/00 ,  B28D5/00 ,  H01L21/67 ,  C11D3/30 ,  H01L21/78

CPC分类号： C11D3/2082 ,  B28D5/0076 ,  C11D1/14 ,  C11D3/044 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02076 ,  H01L21/67075 ,  H01L21/78 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2224/03

摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。

公开(公告)号：US20100009517A1

公开(公告)日：2010-01-14

申请号：US12499556

申请日：2009-07-08

申请人： Terence Quintin Collier ,  Charles A. Lhota ,  David Barry Rennie ,  Rajkumar Ramamurthi ,  Madhukar Bhaskara Rao ,  Dnyanesh Chandrakant Tamboli

发明人： Terence Quintin Collier ,  Charles A. Lhota ,  David Barry Rennie ,  Rajkumar Ramamurthi ,  Madhukar Bhaskara Rao ,  Dnyanesh Chandrakant Tamboli

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： H01L21/02076 ,  B28D5/0076 ,  C11D1/143 ,  C11D1/22 ,  C11D1/24 ,  C11D1/345 ,  C11D3/2075 ,  C11D11/0047 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/8501

摘要： Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.

摘要翻译： 污染物残留物或颗粒的粘附被抑制，在通过锯切切割晶片的过程中，暴露表面的腐蚀显着降低或消除。 一种不含氟的含水组合物，其包含二羧酸和/或其盐; 使用羟基羧酸和/或其盐或含有酸的酸，表面活性剂和去离子水。

公开(公告)号：US20140170835A1

公开(公告)日：2014-06-19

申请号：US14195285

申请日：2014-03-03

申请人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

发明人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

IPC分类号： C11D3/20 ,  H01L21/67 ,  H01L21/78

CPC分类号： C11D3/2082 ,  B28D5/0076 ,  C11D1/14 ,  C11D3/044 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02076 ,  H01L21/67075 ,  H01L21/78 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2224/03

摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。

公开(公告)号：US08580656B2

公开(公告)日：2013-11-12

申请号：US12499556

申请日：2009-07-08

申请人： Terence Quintin Collier ,  Charles A. Lhota ,  David Barry Rennie ,  Rajkumar Ramamurthi ,  Madhukar Bhaskara Rao ,  Dnyanesh Chandrakant Tamboli

发明人： Terence Quintin Collier ,  Charles A. Lhota ,  David Barry Rennie ,  Rajkumar Ramamurthi ,  Madhukar Bhaskara Rao ,  Dnyanesh Chandrakant Tamboli

IPC分类号： H01L21/00 ,  H01L21/44 ,  C03C15/00 ,  C03C25/68 ,  C09K13/00

CPC分类号： H01L21/02076 ,  B28D5/0076 ,  C11D1/143 ,  C11D1/22 ,  C11D1/24 ,  C11D1/345 ,  C11D3/2075 ,  C11D11/0047 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/8501

摘要： Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.

摘要翻译： 污染物残留物或颗粒的粘附被抑制，在通过锯切切割晶片的过程中，暴露表面的腐蚀显着降低或消除。 一种不含氟的含水组合物，其包含二羧酸和/或其盐; 使用羟基羧酸和/或其盐或含有酸的酸，表面活性剂和去离子水。

公开(公告)号：US20120009762A1

公开(公告)日：2012-01-12

申请号：US13171252

申请日：2011-06-28

申请人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

发明人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

IPC分类号： H01L21/78 ,  C23F11/14 ,  C23F11/167 ,  C23F11/12

CPC分类号： C11D3/2082 ,  B28D5/0076 ,  C11D1/14 ,  C11D3/044 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02076 ,  H01L21/67075 ,  H01L21/78 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2224/03

摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。

公开(公告)号：US06677286B1

公开(公告)日：2004-01-13

申请号：US10191060

申请日：2002-07-10

申请人： Roberto John Rovito ,  David Barry Rennie ,  Dana L. Durham

发明人： Roberto John Rovito ,  David Barry Rennie ,  Dana L. Durham

IPC分类号： C09K1300

CPC分类号： H01L21/02063 ,  C09K13/00 ,  H01L21/02071

摘要： Compositions containing water, an organic dicarboxylic acid, a buffering agent and fluorine source and optionally a water miscible organic solvent are capable of removing etching residue.

摘要翻译： 含有水，有机二羧酸，缓冲剂和氟源以及任选的水混溶性有机溶剂的组合物能够除去蚀刻残留物。

公开(公告)号：US06821352B2

公开(公告)日：2004-11-23

申请号：US10723737

申请日：2003-11-26

申请人： Roberto John Rovito ,  David Barry Rennie ,  Dana L. Durham

发明人： Roberto John Rovito ,  David Barry Rennie ,  Dana L. Durham

IPC分类号： C23G102

CPC分类号： H01L21/02063 ,  C09K13/00 ,  H01L21/02071

摘要： A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.

摘要翻译： 本文公开了一种用于除去蚀刻残余物的组合物及其使用方法。 在一个方面，提供一种从基材上去除蚀刻残留物的方法，包括：使基材与包含水，有机二羧酸，缓冲剂，氟源和任选的水混溶性有机溶剂的组合物接触。

公开(公告)号：US09328318B2

公开(公告)日：2016-05-03

申请号：US14195285

申请日：2014-03-03

申请人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

发明人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

IPC分类号： H01L21/02 ,  C11D3/20 ,  B28D5/00 ,  C11D3/04 ,  C11D3/30 ,  C11D3/33 ,  C11D11/00 ,  H01L21/67 ,  C11D1/14 ,  H01L21/78

CPC分类号： C11D3/2082 ,  B28D5/0076 ,  C11D1/14 ,  C11D3/044 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02076 ,  H01L21/67075 ,  H01L21/78 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2224/03

摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。