Abstract:
Method for removing flux residue and defluxing residue from an article using a dense processing fluid and a dense rinse fluid is disclosed herein. In one embodiment, there is provided a method comprising: introducing the article comprising contaminants into a processing chamber; contacting the article with a dense processing fluid comprising a dense fluid, at least one processing agent, and optionally a cosolvent to provide a partially treated article; and contacting the partially treated article with a dense rinse fluid comprising the dense fluid and optionally the cosolvent to provide a treated article wherein an agitation source is introducing during at least a portion of the first and/or the second contacting step.
Abstract:
A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
Abstract:
A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
Abstract:
Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.
Abstract:
A dense cleaning fluid for removing contaminants from a substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.
Abstract:
A process for methylating an alpha carbon adjacent to an electron withdrawing group includes reacting dimethyl ether with a molecule containing the alpha carbon and the electron withdrawing group to substitute a methyl group on the alpha carbon. The process can be conducted in a vapor phase and can be represented by Equation I: R(CH2)nCH2-EWG+CH3OCH3→R(CH2)nCH(CH3)-EWG+CH3OH (I) where EWG is the electron withdrawing group, and R is H when n is 0, 1 or 2, and R is alkyl, EWG or aryl when n>2. For example, the molecule reacted with dimethyl ether can be acetic acid, propionic acid, methyl acetate, methyl propionate, acetonitrile, propionitrile and acetone. The process is catalyzed by an acid catalyst containing a Lewis acid functionality. When the electron withdrawing group is an acid, a methyl ester can be formed by esterifying the electron withdrawing group with methanol liberated from dimethyl ether. When the process is conducted in the presence of an oxidant, such as oxygen, an &agr;,&bgr;-unsaturated bond can be formed in the molecule according to Equation II: R(CH2)nCH(CH3)-EWG+½O2→R(CH2)nC(═CH2)-EWG+H2O (II) where EWG is the electron withdrawing group, and R is H when n is 0, 1 or 2, and R is alkyl, EWG or aryl when n>2.
Abstract:
A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
Abstract:
A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
Abstract:
Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.