Systems for performing thermal reflow operations under high gravity conditions
    1.
    发明授权
    Systems for performing thermal reflow operations under high gravity conditions 失效
    在高重力条件下执行热回流操作的系统

    公开(公告)号:US06573478B2

    公开(公告)日:2003-06-03

    申请号:US10118361

    申请日:2002-04-08

    IPC分类号: C23L1600

    CPC分类号: F27B17/00

    摘要: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source.

    摘要翻译: 热回流处理系统具有可旋转的结构,具有可回流表面的物品被附接到该结构。 该结构联接到驱动马达,其使结构以产生超过重力的向心力的速度旋转。 该系统配备有至少一个辐射热源。 当制品受到向心力时,表面被辐射热源加热。

    Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers
    2.
    发明授权
    Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers 失效
    半导体处理方法,形成二氧化硅的方法形成沟槽隔离区域的方法以及形成层间电介质层的方法

    公开(公告)号:US06323101B1

    公开(公告)日:2001-11-27

    申请号:US09146843

    申请日:1998-09-03

    IPC分类号: H01L2176

    摘要: In one aspect, the invention includes a semiconductor processing method of removing water from a material comprising silicon, oxygen and hydrogen, the method comprising maintaining the material at a temperature of at least about 100° C., more preferably at least 300° C., and at a pressure of greater than 1 atmosphere to drive water from the material. In another aspect, the invention includes a semiconductor processing method of forming SiO2 having a wet etch removal rate of less than about 700 Angstroms/minute comprising: a) forming a layer comprising Si(OH)x; b) maintaining the Si(OH)x at a temperature of at least about 300° C. and at a pressure of greater than 1 atmosphere to drive water from the Si(OH)x; and c) converting the Si(OH)x to SiO2, the SiO2 having a wet etch removal rate of less than about 700 Angstroms/minute under the conditions of a buffered oxide etch utilizing 20:1 H2O:HF, at about atmospheric pressure and at a temperature of about 30° C. In another aspect, the invention includes a method of forming a trench isolation region comprising: a) forming a trench within a substrate; b) forming a layer comprising Si(OH)x within the trench and over the substrate; c) driving water from the layer comprising Si(OH)x at a pressure of greater than 1 atmosphere; d) converting the Si(OH)x to SiO2; and e) removing at least a portion of the SiO2.

    摘要翻译: 一方面,本发明包括从包括硅,氧和氢的材料中去除水的半导体加工方法,该方法包括将材料保持在至少约100℃,更优选至少300℃的温度。 ,并且在大于1个大气压的压力下驱动来自材料的水。 在另一方面,本发明包括形成具有小于约700埃/分钟的湿蚀刻去除速率的SiO 2的半导体加工方法,包括:a)形成包含Si(OH)x的层; b)将Si(OH)x维持在至少约300℃的温度和大于1个大气压的压力下驱动来自Si(OH)x的水; 和c)在约大气压下在使用20:1 H 2 O:H HF的缓冲氧化物蚀刻的条件下,将Si(OH)x转化为SiO 2,SiO 2具有小于约700埃/分钟的湿蚀刻去除速率,以及 在另一方面,本发明包括形成沟槽隔离区域的方法,包括:a)在衬底内形成沟槽; b)在沟槽内和衬底上形成包含Si(OH)x的层; c)在大于1大气压的压力下从含Si(OH)x的层驱动水; d)将Si(OH)x转化为SiO 2; 和e)除去SiO 2的至少一部分。

    Trench isolation method
    3.
    发明授权
    Trench isolation method 失效
    沟槽隔离法

    公开(公告)号:US6165853A

    公开(公告)日:2000-12-26

    申请号:US977854

    申请日:1997-11-25

    摘要: A method of forming trench isolated integrated circuitry on a substrate provides a substrate having a first insulating material within and projecting from an isolation trench and a second insulating material laterally proximate the first insulating material. The second insulating material is etched substantially selective relative to the first insulating material to expose substrate beneath the second insulating material. After the etching, a gate dielectric layer is formed over the exposed substrate. A transistor gate is formed over the gate dielectric layer. In but one other implementation, an oxide layer is thermally grown over a semiconductive substrate. An isolation trench is formed through the thermal oxide layer and the semiconductive substrate. Oxide is deposited within the trenches and formed to project outwardly relative to the thermal oxide. The thermally grown oxide is etched substantially selective relative to the deposited oxide to outwardly expose the semiconductive substrate and provide deposited oxide within the isolation trench which projects outwardly of the substrate. The semiconductive substrate and projecting deposited oxide have an interface therebetween which is substantially void of any recess of the deposited oxide below the semiconductive substrate. After the etching, gate oxide is grown over the substrate and the interface. A transistor gate is formed over the gate oxide over the semiconductive substrate.

    摘要翻译: 在衬底上形成沟槽隔离集成电路的方法提供了具有第一绝缘材料的衬底,其在隔离沟槽内并且从侧向靠近第一绝缘材料的第二绝缘材料突出。 相对于第一绝缘材料蚀刻基本上选择性的第二绝缘材料,以暴露第二绝缘材料下面的衬底。 在蚀刻之后,在暴露的衬底上形成栅极电介质层。 晶体管栅极形成在栅极电介质层上。 在另一个实施方案中,氧化物层在半导体衬底上热生长。 通过热氧化物层和半导体衬底形成隔离沟槽。 氧化物沉积在沟槽内并形成为相对于热氧化物向外突出。 热生长的氧化物被相对于沉积的氧化物基本上选择性地被蚀刻以向外暴露半导体衬底,并且在离开衬底外部的隔离沟槽内提供沉积的氧化物。 半导体衬底和突出沉积氧化物之间具有界面,其基本上没有沉积氧化物在半导体衬底下方的任何凹陷。 在蚀刻之后,栅极氧化物生长在衬底和界面上。 晶体管栅极形成在半导体衬底上的栅极氧化物的上方。

    Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure
    4.
    发明授权
    Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure 有权
    用于形成利用侧壁间隔物作为蚀刻掩模并保留为隔离结构的一部分的自对准隔离结构的方法

    公开(公告)号:US08173517B2

    公开(公告)日:2012-05-08

    申请号:US12828868

    申请日:2010-07-01

    IPC分类号: H01L21/764 H01L29/00

    CPC分类号: H01L21/76237

    摘要: The present invention relates to methods for forming microelectronic structures in a semiconductor substrate. The method includes selectively removing dielectric material to expose a portion of an oxide overlying a semiconductor substrate. Insulating material may be formed substantially conformably over the oxide and remaining portions of the dielectric material. Spacers may be formed from the insulating material. An isolation trench etch follows the spacer etch. An optional thermal oxidation of the surfaces in the isolation trench may be performed, which may optionally be followed by doping of the bottom of the isolation trench to further isolate neighboring active regions on either side of the isolation trench. A conformal material may be formed substantially conformably over the spacer, over the remaining portions of the dielectric material, and substantially filling the isolation trench. Planarization of the conformal material may follow.

    摘要翻译: 本发明涉及在半导体衬底中形成微电子结构的方法。 该方法包括选择性地去除介电材料以暴露覆盖半导体衬底的氧化物的一部分。 绝缘材料可以基本上顺应地形成在电介质材料的氧化物和剩余部分上。 间隔物可以由绝缘材料形成。 隔离沟蚀刻遵循间隔物蚀刻。 可以执行隔离沟槽中的表面的可选热氧化,其可以任选地随后掺杂隔离沟槽的底部以进一步隔离隔离沟槽的任一侧上的相邻有源区。 可以在绝缘材料的剩余部分上基本上顺应地在间隔物上形成共形材料,并且基本上填充隔离沟槽。 保形材料的平面化可能遵循。

    System for performing thermal reflow operations under high gravity conditions
    5.
    发明授权
    System for performing thermal reflow operations under high gravity conditions 失效
    用于在高重力条件下进行热回流操作的系统

    公开(公告)号:US06747249B2

    公开(公告)日:2004-06-08

    申请号:US10446381

    申请日:2003-05-27

    IPC分类号: C23C1600

    CPC分类号: F27B17/00

    摘要: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source.

    摘要翻译: 热回流处理系统具有可旋转的结构,具有可回流表面的物品被附接到该结构。 该结构联接到驱动马达,其使结构以产生超过重力的向心力的速度旋转。 该系统配备有至少一个辐射热源。 当制品受到向心力时,表面被辐射热源加热。

    Method and apparatus for performing thermal reflow operations under high
gravity conditions

    公开(公告)号:US6096998A

    公开(公告)日:2000-08-01

    申请号:US724048

    申请日:1996-09-17

    CPC分类号: F27B17/00

    摘要: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source. In a preferred embodiment, the structure is a hermetically-sealable chamber which can be pressurized or evacuated. The articles, which may be semiconductor wafers, are positioned on the rotating structure such that the surface to be reflowed faces both the heat source and the structure's rotational axis. In the case of circular semiconductor wafers, the wafers are positioned such that the planar surface of each wafer is centered on and perpendicular to a radius of the cylindrical chamber. By performing the reflow operation while the chamber is spinning, high pseudo-gravitational forces can be generated which aid in planarization, void elimination, densification and in the filling of small aspect ratio contact via openings.

    Trench isolation for semiconductor devices
    7.
    发明授权
    Trench isolation for semiconductor devices 有权
    半导体器件的沟槽隔离

    公开(公告)号:US07235856B1

    公开(公告)日:2007-06-26

    申请号:US09496794

    申请日:2000-02-02

    IPC分类号: H01L29/00

    CPC分类号: H01L21/76224

    摘要: In etching trench isolation structures, a pad oxide or sacrificial oxide may be formed with substantially the same (or higher) etch rate as the trench filler. Because the etch rate in the trench area is substantially similar to (or less than) the etch rate in the non-trench area, similar amounts of material are removed in both the trench area and non-trench area in a subsequent etching process. Consequently, formation of notches and grooves in the semiconductor structure is minimized. A sacrificial oxide layer may be made by depositing a layer of a suitable material on the surface of a semiconductor structure. By depositing a sacrificial oxide layer instead of thermally growing a sacrificial oxide layer, grooves and the notches in the trench areas are filled by the deposited material.

    摘要翻译: 在蚀刻沟槽隔离结构中,衬垫氧化物或牺牲氧化物可以形成为与沟槽填料基本上相同(或更高)的蚀刻速率。 因为沟槽区域中的蚀刻速率基本上类似于(或小于)非沟槽区域中的蚀刻速率,所以在随后的蚀刻工艺中,在沟槽区域和非沟槽区域中去除相似量的材料。 因此,半导体结构中的凹口和凹槽的形成最小化。 可以通过在半导体结构的表面上沉积合适的材料层来制造牺牲氧化物层。 通过沉积牺牲氧化物层而不是热生长牺牲氧化物层,沟槽区域中的凹槽和凹口被沉积的材料填充。

    Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination
    8.
    发明授权
    Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination 有权
    在硅锗半导体器件中外延生长,污染减少

    公开(公告)号:US06597057B2

    公开(公告)日:2003-07-22

    申请号:US10193056

    申请日:2002-07-10

    IPC分类号: H01L3111

    摘要: A structure includes an etch stop layer and a cap layer. The etch stop layer is situated over a first oxide isolation region and a second oxide isolation region in a wafer. A window is situated in the cap layer and the etch stop layer. The window exposes a surface of the wafer situated between the first oxide isolation region and the second oxide isolation region. The surface is cleaned for epitaxially growing a semiconductor. The etch stop layer can comprise, for example, silicon. The cap layer can comprise, for example, silicon nitride, amorphous silicon or polycrystalline silicon. According to one embodiment, the structure can further comprise an epitaxially grown silicon-germanium structure on the surface. According to one embodiment, the surface includes a single crystal silicon collector and a base grown on the single crystal silicon collector, where the base is an epitaxially grown silicon-germanium structure.

    摘要翻译: 一种结构包括蚀刻停止层和盖层。 蚀刻停止层位于晶片中的第一氧化物隔离区和第二氧化物隔离区之上。 窗口位于盖层和蚀刻停止层中。 窗口暴露位于第一氧化物隔离区域和第二氧化物隔离区域之间的晶片的表面。 清洁表面以外延生长半导体。 蚀刻停止层可以包括例如硅。 盖层可以包括例如氮化硅,非晶硅或多晶硅。 根据一个实施例,该结构还可以包括在表面上的外延生长的硅 - 锗结构。 根据一个实施例,表面包括单晶硅集电器和在单晶硅集电极上生长的基极,其中基极是外延生长的硅 - 锗结构。

    Trench isolation for semiconductor devices
    9.
    发明授权
    Trench isolation for semiconductor devices 有权
    半导体器件的沟槽隔离

    公开(公告)号:US06214697B1

    公开(公告)日:2001-04-10

    申请号:US09560416

    申请日:2000-04-27

    IPC分类号: H01L2176

    CPC分类号: H01L21/76224

    摘要: In etching trench isolation structures, a pad oxide or sacrificial oxide may be formed with substantially the same (or higher) etch rate as the trench filler. Because the etch rate in the trench area is substantially similar to (or less than) the etch rate in the non-trench area, similar amounts of material are removed in both the trench area and non-trench area in a subsequent etching process. Consequently, formation of notches and grooves in the semiconductor structure is minimized. A sacrificial oxide layer may be made depositing a layer of a suitable material on the surface of a semiconductor structure. By depositing sacrificial oxide layer instead of thermally growing a sacrificial oxide layer, grooves and the notches in the trench areas are filled by the deposited material.

    摘要翻译: 在蚀刻沟槽隔离结构中,衬垫氧化物或牺牲氧化物可以形成为与沟槽填料基本上相同(或更高)的蚀刻速率。 因为沟槽区域中的蚀刻速率基本上类似于(或小于)非沟槽区域中的蚀刻速率,所以在随后的蚀刻工艺中,在沟槽区域和非沟槽区域中去除相似量的材料。 因此,半导体结构中的凹口和凹槽的形成最小化。 可以使牺牲氧化物层在半导体结构的表面上沉积合适的材料层。 通过沉积牺牲氧化物层而不是热生长牺牲氧化物层,沟槽区域中的凹槽和凹口被沉积的材料填充。

    Method and apparatus for performing thermal reflow operations under high gravity conditions
    10.
    发明授权
    Method and apparatus for performing thermal reflow operations under high gravity conditions 失效
    在高重力条件下执行热回流操作的方法和装置

    公开(公告)号:US06174761B1

    公开(公告)日:2001-01-16

    申请号:US09425840

    申请日:1999-10-21

    IPC分类号: H01L218238

    CPC分类号: F27B17/00

    摘要: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source. In a preferred embodiment, the structure is a hermetically-sealable chamber which can be pressurized or evacuated. The articles, which may be semiconductor wafers, are positioned on the rotating structure such that the surface to be reflowed faces both the heat source and the structure's rotational axis. In the case of circular semiconductor wafers, the wafers are positioned such that the planar surface of each wafer is centered on and perpendicular to a radius of the cylindrical chamber. By performing the reflow operation while the chamber is spinning, high pseudo-gravitational forces can be generated which aid in planarization, void elimination, densification and in the filling of small aspect ratio contact via openings.

    摘要翻译: 热回流处理系统具有可旋转的结构,具有可回流表面的物品被附接到该结构。 该结构联接到驱动马达,其使结构以产生超过重力的向心力的速度旋转。 该系统配备有至少一个辐射热源。 当制品受到向心力时,表面被辐射热源加热。 在一个优选的实施例中,该结构是可被加压或抽空的可密封腔室。 可以是半导体晶片的制品被定位在旋转结构上,使得待回流的表面面向热源和结构的旋转轴。 在圆形半导体晶片的情况下,晶片被定位成使得每个晶片的平面表面在圆柱形腔的半径上并且垂直于圆柱形腔的半径。 通过在室内旋转时进行回流操作,可以产生高的假重力,这有助于平坦化,消除空隙,致密化,以及通过开口填充小的纵横比接触。