公开(公告)号：US5223457A

公开(公告)日：1993-06-29

申请号：US774127

申请日：1991-10-11

申请人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Someskh ,  Dan Maydan

发明人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Someskh ,  Dan Maydan

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H05H1/46 ,  Y10S148/051

摘要： A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

摘要翻译： 能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏压降低，从而能够实现不损害在高速和高密度集成电路中日益普及的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US5849136A

公开(公告)日：1998-12-15

申请号：US754833

申请日：1996-11-22

申请人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

发明人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

摘要翻译： 能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏置电压降低，以使得不会损害在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US5618382A

公开(公告)日：1997-04-08

申请号：US83750

申请日：1993-06-25

申请人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

发明人： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H05H1/46 ,  Y10S148/051

摘要： A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

摘要翻译： 等离子体处理装置的电容器操作明显高于13.56MHz可以产生被动电极的自偏压降低，以使得不会损坏在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

公开(公告)号：US06170428B2

公开(公告)日：2001-01-09

申请号：US08679927

申请日：1996-07-15

申请人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

发明人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

IPC分类号： C23C1600

CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.

摘要翻译： 本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。 本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

公开(公告)号：US06893907B2

公开(公告)日：2005-05-17

申请号：US10786410

申请日：2004-02-24

申请人： Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J2237/0825 ,  Y10S438/977

摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

摘要翻译： 在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压， 将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心 并且在硅表面层中具有有限的氧浓度。 然后减小硅表面层中的氧浓度以允许外延硅沉积。

公开(公告)号：US07871469B2

公开(公告)日：2011-01-18

申请号：US10867591

申请日：2004-06-14

申请人： Dan Maydan ,  Arkadii V. Samoilov

发明人： Dan Maydan ,  Arkadii V. Samoilov

IPC分类号： C30B21/02

CPC分类号： G02B6/132 ,  G02B2006/12095 ,  G02B2006/121 ,  Y10T117/10

摘要： A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.

摘要翻译： 一种形成平面波导结构的方法，包括在衬底上形成第一渐变层，其中所述第一渐变层包括第一和第二光学材料，其中所述第一光学材料的浓度随着所述第一渐变层的高度而增加 ; 在所述第一渐变层上形成第二渐变层，所述第二渐变层包括所述第一和第二光学材料，其中所述第一光学材料的浓度随着所述第二渐变层的高度而降低。 该方法还包括在第一梯度层上形成均匀的层，所述均匀层包含第一和第二光学材料，其中第一光学材料浓度恒定。

公开(公告)号：US20070080414A1

公开(公告)日：2007-04-12

申请号：US11522856

申请日：2006-09-18

申请人： Claes Bjorkman ,  Lawrence West ,  Dan Maydan ,  Samuel Broydo

发明人： Claes Bjorkman ,  Lawrence West ,  Dan Maydan ,  Samuel Broydo

IPC分类号： H01L31/0232

CPC分类号： G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  H01L21/84 ,  H01L27/1203

摘要： An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

摘要翻译： 一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路， 所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US06610354B2

公开(公告)日：2003-08-26

申请号：US09886174

申请日：2001-06-18

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： C23C1640

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

公开(公告)号：US06514850B2

公开(公告)日：2003-02-04

申请号：US09775010

申请日：2001-01-31

申请人： Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

发明人： Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

IPC分类号： H01L214763

CPC分类号： H01L21/76829 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

摘要： Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

公开(公告)号：US6055927A

公开(公告)日：2000-05-02

申请号：US782169

申请日：1997-01-14

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.