公开(公告)号：US09139703B2

公开(公告)日：2015-09-22

申请号：US13505011

申请日：2010-10-15

申请人： Chul-Hwan Kim ,  Seung-Hak Ko ,  Jae-Seong Shim ,  Eun-Kyoung Kwon ,  Yong-Han Choi

发明人： Chul-Hwan Kim ,  Seung-Hak Ko ,  Jae-Seong Shim ,  Eun-Kyoung Kwon ,  Yong-Han Choi

IPC分类号： A61K9/48 ,  C08J3/12 ,  C08L3/02 ,  A61K31/00 ,  A61K36/25 ,  A61K36/16 ,  A61K31/201 ,  A61K31/19 ,  A61K31/355 ,  C07C57/03 ,  A61K31/385 ,  A61K31/52 ,  C08L1/02 ,  C08L1/28 ,  C08L5/00 ,  C08L5/04 ,  C08L5/06 ,  C08L5/12 ,  C08L5/08

CPC分类号： C08J3/126 ,  A61K31/00 ,  A61K31/19 ,  A61K31/201 ,  A61K31/355 ,  A61K31/385 ,  A61K31/52 ,  A61K36/16 ,  A61K36/25 ,  C07C57/03 ,  C08L1/02 ,  C08L1/286 ,  C08L3/02 ,  C08L5/00 ,  C08L5/04 ,  C08L5/06 ,  C08L5/08 ,  C08L5/12

摘要： Provided is a method of solubilizing a poorly soluble/insoluble active material through formation of an oligomer composite, in which a structure having a hydrophobic cavity structure is formed by using oligomers derived from two types of hydrophilic natural polymers and a poorly soluble/insoluble component is encapsulated in the cavity structure, and thus, self-aggregation of the poorly soluble/insoluble material is prevented and simultaneously, thermodynamic stability increases to effectively solubilize the poorly soluble/insoluble material. According to the constitution of the present invention, the method may include a first operation of preparing an oligomer composite having a cavity structure formed therein by mixing and dissolving oligomers derived from two types of hydrophilic natural polymers in water, and a second operation of adding a poorly soluble/insoluble material to the oligomer composite to encapsulate the poorly soluble/insoluble material in the hydrophobic cavity structure of the oligomer composite.

摘要翻译： 提供了通过形成低聚物复合物来溶解难溶性/不溶性活性物质的方法，其中通过使用衍生自两种亲水性天然聚合物的低聚物和难溶性/不溶性组分形成具有疏水空腔结构的结构 封装在空腔结构中，因此防止了难溶性/不溶性材料的自聚集，并且同时热力学稳定性增加，以有效溶解难溶性/不溶性材料。 根据本发明的结构，该方法可以包括通过将来自两种亲水性天然聚合物的低聚物混合并溶解在水中而制备其中形成有空腔结构的低聚物复合物的第一操作和第二操作， 低聚物复合材料的难溶性/不溶性材料将难溶性/不溶性材料包封在低聚物复合材料的疏水空腔结构中。

公开(公告)号：US20140306296A1

公开(公告)日：2014-10-16

申请号：US14178480

申请日：2014-02-12

申请人： Chan-Hee JEON ,  Eun-Kyoung KWON ,  Il-Ryong KIM ,  Han-Gu KIM ,  Woo-Jin SEO ,  Ki-Tae LEE

发明人： Chan-Hee JEON ,  Eun-Kyoung KWON ,  Il-Ryong KIM ,  Han-Gu KIM ,  Woo-Jin SEO ,  Ki-Tae LEE

IPC分类号： H01L27/088 ,  H01L29/66

CPC分类号： H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

摘要： In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.

摘要翻译： 在一个实施例中，半导体器件包括从衬底突出的至少一个有源鳍片，与有源鳍片交叉的第一栅极电极和在第一栅电极的第一侧上形成在有源鳍片上的第一杂质区域。 第一杂质区的至少一部分形成在活性鳍上的第一外延层部分中。 在第一栅电极的第二侧的有源鳍片上形成第二杂质区。 第二杂质区具有至少一部分未形成在外延层中的部分。

公开(公告)号：US20070164310A1

公开(公告)日：2007-07-19

申请号：US11654755

申请日：2007-01-18

申请人： Eun-Kyoung Kwon

发明人： Eun-Kyoung Kwon

IPC分类号： H01L29/74

CPC分类号： H01L27/0255

摘要： An electrostatic discharge element includes a first diode and a second diode. The first diode has a first well region formed in a substrate, a P-type ion-implanted region formed in the first well region, an N-type ion-implanted region formed in the first well region and spaced from the P-type ion-implanted region by a predetermined first distance, and a first intermediate layer formed on a portion of the first well region corresponding to the predetermined first distance. The second diode has a second well region form in the substrate, a P-type ion-implanted region formed in the second well region, an N-type ion-implanted region formed in the second well region and spaced from the P-type ion-implanted region by a predetermined second distance, and a second intermediate layer formed on a portion of the second well region corresponding to the predetermined second distance.

摘要翻译： 静电放电元件包括​​第一二极管和第二二极管。 第一二极管具有形成在衬底中的第一阱区，形成在第一阱区中的P型离子注入区，形成在第一阱区中并与P型离子间隔开的N型离子注入区 - 预定区域预定的第一距离，以及形成在对应于预定第一距离的第一井区域的一部分上的第一中间层。 第二二极管在衬底中具有第二阱区形式，形成在第二阱区中的P型离子注入区，形成在第二阱区中并与P型离子间隔开的N型离子注入区 - 预定的第二距离的第二中间层，以及形成在与预定的第二距离相对应的第二阱区域的一部分上的第二中间层。

公开(公告)号：US06914305B2

公开(公告)日：2005-07-05

申请号：US10252631

申请日：2002-09-23

申请人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

发明人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

IPC分类号： H01L21/822 ,  H01L21/8238 ,  H01L23/60 ,  H01L23/62 ,  H01L27/00 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/027

摘要： An output circuit of an integrated circuit device includes first and second MOS transistors including respective spaced apart pairs of source and drain regions in a substrate, arranged such that respective first and second channels of the first and second MOS transistors are laterally displaced with respect to one another. The output circuit further includes an isolation region in the substrate, disposed between the first and second MOS transistors. A first conductor connects the source region of the first MOS transistor to a power supply node. A second conductor connects the drain region of the first MOS transistor to the source region of the second MOS transistor. A third conductor connects the drain region of the second MOS transistor to an external signal pad of the integrated circuit device. The isolation region may comprise first and second insulation regions surrounding respective ones of the first and second MOS transistors, and a guard ring surrounding and separating the insulation regions.

公开(公告)号：US07354813B2

公开(公告)日：2008-04-08

申请号：US11142486

申请日：2005-06-01

申请人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

发明人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

IPC分类号： H01L21/8234

CPC分类号： H01L27/027

摘要： An output circuit of an integrated circuit device includes first and second MOS transistors including respective spaced apart pairs of source and drain regions in a substrate, arranged such that respective first and second channels of the first and second MOS transistors are laterally displaced with respect to one another. The output circuit further includes an isolation region in the substrate, disposed between the first and second MOS transistors. A first conductor connects the source region of the first MOS transistor to a power supply node. A second conductor connects the drain region of the first MOS transistor to the source region of the second MOS transistor. A third conductor connects the drain region of the second MOS transistor to an external signal pad of the integrated circuit device. The isolation region may comprise first and second insulation regions surrounding respective ones of the first and second MOS transistors, and a guard ring surrounding and separating the insulation regions.

摘要翻译： 集成电路器件的输出电路包括第一和第二MOS晶体管，其包括在衬底中的相应的间隔开的源极和漏极区对，被布置成使得第一和第二MOS晶体管的相应的第一和第二通道相对于一个 另一个。 输出电路还包括位于第一和第二MOS晶体管之间的衬底中的隔离区。 第一导体将第一MOS晶体管的源极区域连接到电源节点。 第二导体将第一MOS晶体管的漏极区域连接到第二MOS晶体管的源极区域。 第三导体将第二MOS晶体管的漏极区域与集成电路器件的外部信号焊盘连接。 隔离区域可以包括围绕第一和第二MOS晶体管中的相应的第一和第二绝缘区域，以及围绕和分离绝缘区域的保护环。

公开(公告)号：US20050205928A1

公开(公告)日：2005-09-22

申请号：US11142486

申请日：2005-06-01

申请人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

发明人： Gue-Hyung Kwon ,  Eun-Kyoung Kwon

IPC分类号： H01L21/822 ,  H01L21/8238 ,  H01L23/60 ,  H01L23/62 ,  H01L27/00 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/027

摘要： An output circuit of an integrated circuit device includes first and second MOS transistors including respective spaced apart pairs of source and drain regions in a substrate, arranged such that respective first and second channels of the first and second MOS transistors are laterally displaced with respect to one another. The output circuit further includes an isolation region in the substrate, disposed between the first and second MOS transistors. A first conductor connects the source region of the first MOS transistor to a power supply node. A second conductor connects the drain region of the first MOS transistor to the source region of the second MOS transistor. A third conductor connects the drain region of the second MOS transistor to an external signal pad of the integrated circuit device. The isolation region may comprise first and second insulation regions surrounding respective ones of the first and second MOS transistors, and a guard ring surrounding and separating the insulation regions.

摘要翻译： 集成电路器件的输出电路包括第一和第二MOS晶体管，其包括在衬底中的相应的间隔开的源极和漏极区对，被布置成使得第一和第二MOS晶体管的相应的第一和第二通道相对于一个 另一个。 输出电路还包括位于第一和第二MOS晶体管之间的衬底中的隔离区。 第一导体将第一MOS晶体管的源极区域连接到电源节点。 第二导体将第一MOS晶体管的漏极区域连接到第二MOS晶体管的源极区域。 第三导体将第二MOS晶体管的漏极区域与集成电路器件的外部信号焊盘连接。 隔离区域可以包括围绕第一和第二MOS晶体管中的相应的第一和第二绝缘区域，以及围绕和分离绝缘区域的保护环。

公开(公告)号：US09620502B2

公开(公告)日：2017-04-11

申请号：US14178480

申请日：2014-02-12

申请人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

发明人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L27/11

CPC分类号： H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

摘要： In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.

公开(公告)号：US20120219604A1

公开(公告)日：2012-08-30

申请号：US13505011

申请日：2010-10-15

申请人： Chul-Hwan Kim ,  Seung-Hak Ko ,  Jae-Seong Shim ,  Eun-Kyoung Kwon ,  Yong-Han Choi

发明人： Chul-Hwan Kim ,  Seung-Hak Ko ,  Jae-Seong Shim ,  Eun-Kyoung Kwon ,  Yong-Han Choi

IPC分类号： A61K9/48

CPC分类号： C08J3/126 ,  A61K31/00 ,  A61K31/19 ,  A61K31/201 ,  A61K31/355 ,  A61K31/385 ,  A61K31/52 ,  A61K36/16 ,  A61K36/25 ,  C07C57/03 ,  C08L1/02 ,  C08L1/286 ,  C08L3/02 ,  C08L5/00 ,  C08L5/04 ,  C08L5/06 ,  C08L5/08 ,  C08L5/12

摘要： Provided is a method of solubilizing a poorly soluble/insoluble active material through formation of an oligomer composite, in which a structure having a hydrophobic cavity structure is formed by using oligomers derived from two types of hydrophilic natural polymers and a poorly soluble/insoluble component is encapsulated in the cavity structure, and thus, self-aggregation of the poorly soluble/insoluble material is prevented and simultaneously, thermodynamic stability increases to effectively solubilize the poorly soluble/insoluble material. According to the constitution of the present invention, the method may include a first operation of preparing an oligomer composite having a cavity structure formed therein by mixing and dissolving oligomers derived from two types of hydrophilic natural polymers in water, and a second operation of adding a poorly soluble/insoluble material to the oligomer composite to encapsulate the poorly soluble/insoluble material in the hydrophobic cavity structure of the oligomer composite.

摘要翻译： 提供了通过形成低聚物复合物来溶解难溶性/不溶性活性物质的方法，其中通过使用衍生自两种亲水性天然聚合物的低聚物和难溶性/不溶性组分形成具有疏水空腔结构的结构 封装在空腔结构中，因此防止了难溶性/不溶性材料的自聚集，并且同时热力学稳定性增加，以有效溶解难溶性/不溶性材料。 根据本发明的结构，该方法可以包括通过将来自两种亲水性天然聚合物的低聚物混合并溶解在水中而制备其中形成有空腔结构的低聚物复合物的第一操作和第二操作， 低聚物复合材料的难溶性/不溶性材料将难溶性/不溶性材料包封在低聚物复合材料的疏水空腔结构中。