公开(公告)号：US10559584B2

公开(公告)日：2020-02-11

申请号：US15426797

申请日：2017-02-07

申请人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

发明人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

IPC分类号： H01L27/11582 ,  H01L21/28 ,  H01L29/423

摘要： A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.

公开(公告)号：US20180012902A1

公开(公告)日：2018-01-11

申请号：US15426797

申请日：2017-02-07

申请人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

发明人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

IPC分类号： H01L29/423 ,  H01L21/28

CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/42368

摘要： A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.

公开(公告)号：US09698233B2

公开(公告)日：2017-07-04

申请号：US14644408

申请日：2015-03-11

申请人： Eun-Yeoung Choi ,  Young-Jin Noh ,  Bi-O Kim ,  Kwang-Min Park ,  Jae-Young Ahn ,  Ju-Mi Yun ,  Jae-Ho Choi ,  Ki-Hyun Hwang

发明人： Eun-Yeoung Choi ,  Young-Jin Noh ,  Bi-O Kim ,  Kwang-Min Park ,  Jae-Young Ahn ,  Ju-Mi Yun ,  Jae-Ho Choi ,  Ki-Hyun Hwang

IPC分类号： H01L29/792 ,  H01L29/51 ,  H01L27/11582 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11582 ,  H01L29/518

摘要： Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

公开(公告)号：US20160064227A1

公开(公告)日：2016-03-03

申请号：US14833311

申请日：2015-08-24

申请人： Hyun Yong GO ,  Eun Young LEE ,  Jung Geun JEE ,  Eun Yeoung CHOI ,  Jin Gyun KIM ,  Hun Hyeong LIM

发明人： Hyun Yong GO ,  Eun Young LEE ,  Jung Geun JEE ,  Eun Yeoung CHOI ,  Jin Gyun KIM ,  Hun Hyeong LIM

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L29/49

CPC分类号： H01L21/321 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/495 ,  H01L29/7827

摘要： There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.

摘要翻译： 提供了制造半导体器件的方法，包括在热处理室中提供包括包含氧化表面层的金属层的衬底，在热处理室内产生氢自由基，并使用氢原子还原金属层的氧化表面层 。

公开(公告)号：US20150279955A1

公开(公告)日：2015-10-01

申请号：US14644408

申请日：2015-03-11

申请人： Eun-Yeoung CHOI ,  Young-Jin NOH ,  Bi-O KIM ,  Kwang-Min PARK ,  Jae-Young AHN ,  Ju-Mi YUN ,  Jae-Ho CHOI ,  Ki-Hyun HWANG

发明人： Eun-Yeoung CHOI ,  Young-Jin NOH ,  Bi-O KIM ,  Kwang-Min PARK ,  Jae-Young AHN ,  Ju-Mi YUN ,  Jae-Ho CHOI ,  Ki-Hyun HWANG

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L27/115

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11582 ,  H01L29/518

摘要： Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

摘要翻译： 公开了隧道绝缘层结构及其制造方法。 隧道绝缘层结构可以包括第一隧道绝缘层，第二隧道绝缘层，第三隧道绝缘层，第四隧道绝缘层和第五隧道绝缘层。 衬底上的第一隧道绝缘层具有第一带隙能量。 第一隧道绝缘层上的第二隧道绝缘层具有低于第一带隙能量的第二带隙能量。 第二隧道绝缘层上的第三隧道绝缘层具有高于第二带隙能量的第三带隙能量。 第三隧道绝缘层上的第四隧道绝缘层具有低于第三带隙能量的第四带隙能量。 第四隧道绝缘层上的第五隧道绝缘层具有比第四带隙能量高的第五带隙能量。

公开(公告)号：US09490140B2

公开(公告)日：2016-11-08

申请号：US14833311

申请日：2015-08-24

申请人： Hyun Yong Go ,  Eun Young Lee ,  Jung Geun Jee ,  Eun Yeoung Choi ,  Jin Gyun Kim ,  Hun Hyeong Lim

发明人： Hyun Yong Go ,  Eun Young Lee ,  Jung Geun Jee ,  Eun Yeoung Choi ,  Jin Gyun Kim ,  Hun Hyeong Lim

IPC分类号： H01L21/3205 ,  H01L21/321 ,  H01L29/49 ,  H01L27/115

CPC分类号： H01L21/321 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/495 ,  H01L29/7827

摘要： There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.

摘要翻译： 提供了制造半导体器件的方法，包括在热处理室中提供包括包含氧化表面层的金属层的衬底，在热处理室内产生氢自由基，并使用氢原子还原金属层的氧化表面层 。