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39 条记录 (耗时 0.014 秒)

    Resist removing composition and resist removing method using the same
    3.
    发明授权
    Resist removing composition and resist removing method using the same 失效
    使用该抗蚀剂除去组合物和抗蚀剂除去方法

    公开(公告)号：US06508887B1

    公开(公告)日：2003-01-21

    申请号：US09716469

    申请日：2000-11-21

    申请人： Dong-jin Park ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    发明人： Dong-jin Park ,  June-ing Gil ,  Je-eung Park ,  Sang-mun Chon

    IPC分类号： B08B304

    CPC分类号： C11D7/10 ,  C11D3/32 ,  C11D3/3942 ,  C11D7/06 ,  C11D7/08 ,  C11D7/261 ,  C11D7/3218 ,  C11D7/3263 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31133

    摘要： A resist removing composition has an excellent capability for removing a resist, polymer, organometallic polymer and metal oxide and which does not attack underlying layers, and a resist removing method using the same. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and hydrogen peroxide or at least one of a fluoride-based reducing agent and a hydroxide-based reducing agent.

    摘要翻译： 抗蚀剂去除组合物具有优异的去除抗蚀剂，聚合物，有机金属聚合物和金属氧化物并且不会侵蚀下面的层的能力，以及使用其的抗蚀剂去除方法。 抗蚀剂去除组合物包括烷氧基N-羟烷基烷酰胺，选自链烷醇胺，偶极矩为3以上的极性物质和防发生剂的至少一种，以及过氧化氢或氟化物系中的至少一种 还原剂和氢氧化物还原剂。

    Power semiconductor device and method of manufacturing the same
    5.
    发明申请
    Power semiconductor device and method of manufacturing the same 有权
    功率半导体器件及其制造方法

    公开(公告)号：US20100148254A1

    公开(公告)日：2010-06-17

    申请号：US12572240

    申请日：2009-10-01

    申请人： Cho Eung Park

    发明人： Cho Eung Park

    IPC分类号： H01L27/088 ,  H01L21/8234

    CPC分类号： H01L21/823462 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/513 ,  H01L29/66681 ,  H01L29/7816

    摘要： A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage device regions, forming a field insulating layer in the high-voltage device region, forming a first gate oxide layer on the semiconductor substrate, exposing the semiconductor substrate in the low-voltage device region by etching part of the first gate oxide layer and also etching part of the field insulating layer to form a stepped field insulating layer, forming a second gate oxide layer on the first gate oxide layer in the high-voltage device region and on the exposed semiconductor substrate in the low-voltage device region, and forming a gate over the stepped field insulating layer and part of the second gate oxide layer in the high-voltage device region adjoining the field insulating layer.

    摘要翻译： 一种半导体器件及其制造方法。 该方法包括制备具有高电压和低电压器件区域的半导体衬底，在高电压器件区域中形成场绝缘层，在半导体衬底上形成第一栅极氧化物层， 通过蚀刻第一栅极氧化物层的一部分并且还蚀刻场绝缘层的一部分以形成阶梯形场绝缘层，在高电压器件区域中的第一栅极氧化物层上形成第二栅极氧化物层，并且在 在低电压器件区域中暴露的半导体衬底，并且在与栅极绝缘层相邻的高电压器件区域中的阶梯型场绝缘层和第二栅极氧化物层的一部分上形成栅极。

    Optical pickup actuator
    6.
    发明授权
    Optical pickup actuator 有权
    光学拾音器执行器

    公开(公告)号：US07411751B2

    公开(公告)日：2008-08-12

    申请号：US11257064

    申请日：2005-10-25

    申请人： Jung Eung Park ,  Ho Chul Ryu ,  Sam Nyol Hong

    发明人： Jung Eung Park ,  Ho Chul Ryu ,  Sam Nyol Hong

    IPC分类号： G02B7/02

    CPC分类号： G11B7/0933

    摘要： Provided is an optical pickup actuator for writing/reading data in/from an optical storage medium. The optical pickup actuator includes a heat sink member or a heat conductive material for minimizing a bad influence of heat generated from a coil.

    摘要翻译： 提供了一种用于在/从光存储介质中读/写数据的光拾取器致动器。 光拾取器致动器包括用于最小化从线圈产生的热的不良影响的散热构件或导热材料。

    Method and apparatus for driving plasma display panel
    7.
    发明申请
    Method and apparatus for driving plasma display panel 失效
    用于驱动等离子体显示面板的方法和装置

    公开(公告)号：US20080048941A1

    公开(公告)日：2008-02-28

    申请号：US11976212

    申请日：2007-10-22

    申请人： Sang Yoon ,  Eung Park ,  Bong Kang ,  Jung Han

    发明人： Sang Yoon ,  Eung Park ,  Bong Kang ,  Jung Han

    IPC分类号： G09G3/28

    CPC分类号： G09G3/2022 ,  G09G3/2922 ,  G09G3/2927 ,  G09G3/293 ,  G09G3/2932 ,  G09G3/2935 ,  G09G3/294 ,  G09G2310/066 ,  G09G2320/0228

    摘要： The present invention relates to a method and apparatus for driving a plasma display panel that can be driven at a low voltage and prevent undesired discharge from being generated under high temperature environment. A method and apparatus for driving a plasma display panel according to an embodiment of the present invention includes a first step of applying an initialization signal to the first and second electrodes to initialize cells, the initialization signal has at least one rising part where a voltage rises and at least one sustain part where the voltage is sustained; a second step of applying a scan signal to any one of the first and second electrodes, and data to the third electrode to select the cell; and a third step of alternately applying sustain signals to the first and second electrodes to carry out a display for the selected cell.

    摘要翻译： 本发明涉及一种用于驱动等离子体显示面板的方法和装置，其可以在低电压下被驱动并且防止在高温环境下产生不期望的放电。 根据本发明的实施例的用于驱动等离子体显示面板的方法和装置包括：将初始化信号施加到第一和第二电极以初始化单元的第一步骤，初始化信号具有至少一个上升部分，其中电压上升 以及持续电压的至少一个维持部; 将扫描信号施加到第一和第二电极中的任一个的第二步骤，以及向第三电极提供数据以选择单元; 以及将维持信号交替施加到所述第一和第二电极以对所选择的单元执行显示的第三步骤。

    Plasma display panel and manufacturing method thereof
    10.
    发明申请
    Plasma display panel and manufacturing method thereof 失效

    公开(公告)号：US20060145614A1

    公开(公告)日：2006-07-06

    申请号：US11324341

    申请日：2006-01-04

    申请人： Jeong Choi ,  Eung Park

    发明人： Jeong Choi ,  Eung Park

    IPC分类号： H01J17/49

    CPC分类号： H01J11/12 ,  H01J11/40

    摘要： Disclosed are a plasma display panel and a method of manufacturing the same. The plasma display panel according to the present invention comprises a front panel comprising a protective layer and a rear panel disposed apart from the front panel by a predetermined distance. The protective layer comprising magnesium oxide (MgO) is doped with scandium (Sc) and calcium (Ca). The plasma display panel according to the present invention has the advantage of excellent temperature-dependent panel characteristic. The plasma display panel according to the present invention also has the further advantage of excellent voltage margin of the address voltage.